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TOSHIBA[Toshiba Semiconductor]
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Part No. |
GT40G121
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Description |
Insulated Gate bipolar transistor Silicon N Channel igbt The 4th Generation Current Resonance Inverter Switching Applications TOSHIBA Insulated Gate bipolar transistor Silicon N Channel igbt
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File Size |
139.45K /
5 Page |
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it Online |
Download Datasheet
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International Rectifier, Corp. IRF[International Rectifier]
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Part No. |
IRG4BC40K
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Description |
Insulated Gate bipolar transistors (igbts)(短路额定超快速绝缘栅型双极型晶体 绝缘门双极晶体管igbts)(短路额定超快速绝缘栅型双极型晶体管) INSULATED GATE bipolar trANSISTOR(Vces=600V, Vce(on)typ.=2.1V, @Vge=15V, Ic=25A) 600V UltraFast 8-25 kHz Discrete igbt in a TO-220AB package
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File Size |
153.75K /
8 Page |
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it Online |
Download Datasheet
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TOSHIBA[Toshiba Semiconductor]
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Part No. |
GT15M321
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Description |
INSULATED GATE bipolar trANSISTOR SILICON N CHANNEL igbt HIGH POWER SWITCHING APPLICATIONS TOSHIBA INSULATED GATE bipolar trANSISTOR SILICON N CHANNEL igbt
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File Size |
257.03K /
6 Page |
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it Online |
Download Datasheet
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TOSHIBA[Toshiba Semiconductor]
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Part No. |
GT15Q311
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Description |
INSULATED GATE bipolar trANSISTOR SILICON N CHANNEL igbt HIGH POWER SWITCHING APPLICATIONS MOTOR CONtrOL APPLICATIONS TOSHIBA Insulated Gate bipolar transistor Silicon N Channel igbt
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File Size |
167.37K /
7 Page |
View
it Online |
Download Datasheet
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Price and Availability
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