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  ixbt42n170 Datasheet PDF File

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    IXBT42N170

IXYS Corporation
Part No. ixbt42n170
OCR Text ? 2004 ixys all rights reserve v ces = 1700 v i c25 =75a v ce(sat) = 3.6 v c (tab) g = gate, c = collector, e = emitter, tab = collector g c e to-247 ad (ixbh) features
Description (IXBH42N170 / ixbt42n170) High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor
File Size 603.71K  /  5 Page

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    IXYS
Part No. ixbt42n170 IXBH42N170
OCR Text ? 2000 ixys all rights reserved 1 - 2 advanced technical information v ces = 1700 v i c25 =75a v ce(sat) = 3.3 v c (tab) g = gate, c = collector, e = emitter, tab = collector g c e to-247 ad (ixbh) features ? high blocking voltage  jedec ...
Description Discrete IGBTs
File Size 49.18K  /  2 Page

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