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  JCV 8031 Datasheet PDF File

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    KM48L16031BT-GLZ_Y_0 KM44L32031BT-GLZ_Y_0 KM416L8031BT-GLZ_Y_0 KM44L32031BT-GLZ/Y/0 KM48L16031BT-GLZ/Y/0 DDRSDRAM1111 KM

SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
http://
Part No. KM48L16031BT-GLZ_Y_0 KM44L32031BT-GLZ_Y_0 KM416L8031BT-GLZ_Y_0 KM44L32031BT-GLZ/Y/0 KM48L16031BT-GLZ/Y/0 DDRSDRAM1111 KM416L8031BT-GLZ/Y/0 K4H640438A-TLB0 K4H1G0838B-TLA0 K4H1G1638B-TLA0 K4H1G3238B-TLA0 K4H280438B-TLA0 K4H280838B-TLA0 K4H281638B-TLA0 K4H283238B-TLA0 K4H510838B-TLA0 K4H511638B-TLA0 K4H1G1638C-TLA0 K4H1G0838C-TLA0 K4H1G3238C-TLA0 K4H280838C-TLA0 K4H283238B-TLA2 K4H641638A-TLA2 K4H511638A-TLB0 K4H511638A-TCA2 K4H281638A-TLA2 K4H563238B-TCA0 K4H513238B-TLA2 K4H643238B-TLA0 KM44L32031BT-GLZ K4H561638E-TCA0 K4H560838E-TLA2 K4H560438M-TCA0 K4H511638E-TCA2 K4H280838A-TCA0 K4H280838M-TCA0 K4H283238M-TCA2 K4H281638M-TLA0 K4H640838A-TCA0 K4H280838A-TCB0 K4H563238E-TLA0 K4H511638E-TLA0 K4H641638C-TLB0 K4H641638C-TCA2 K4H511638D-TLA2 K4H280838B-TCA2 K4H280838C-TCB0 K4H280438A-TLB0 K4H643238B-TLB0 K4H560838A-TLA2 K4H640838A-TCA2 K4H640838A-TLA2 K4H510838D-TLA2 K4H510438B-TCA0 K4H510438B-TCB0 K4H560438D-TCB0 K4H1G3238C-TCA2 K4H510438C-TCA2 K4H560838C-TCA2 K4H510438E-TCB0 K4H561638E-TCB0 K4H510838E-TCB0 K4H283238E-TCB0 K4H511638E-TCB0 K4H281638E-TCB0 K4H560438B-TCB0 K4H560438B-TLA0 K4H1G0838C-TCB0 K4H510838C-TCB0 838M-TLA2 838M-TLA0
Description Dual Wide Bandwidth High Output Drive Single Supply Op Amp With Shutdown 14-PDIP 0 to 70
Enhanced Product 10-Bit Analog-To-Digital Converters W/Serial Control &amp; 11 Analog Inputs 20-SOIC -40 to 125
Dual Wide Bandwidth High Output Drive Single Supply Op Amp 8-SOIC 0 to 70
Quad, Micropower, LinCMOS(TM) Comparator 14-CDIP -55 to 125
Single Wide Bandwidth High Output Drive Single Supply Op Amp 8-PDIP 0 to 70
Quad Wide Bandwidth High Output Drive Single Supply Op Amp 16-SOIC 0 to 70
Enclosures; For Use With:PC30/25-1 USA Cardmaster Polycarbonate Enclosure; Approval Bodies:UL, CSA; External Height:11.4"; External Width:7.5"; Features:Impact Resistant EN 50102; UV Resistant to UL 508 RoHS Compliant: Yes
Enclosure; For Use With:PC17/16-L3, -3, -LFC3, FC3 Cardmaster Polycarbonate Enclosure; Approval Bodies:UL, CSA; External Height:5.4"; External Width:5.2"; Features:Impact Resistant EN 50102; UV Resistant to UL 508
Dual Wide Bandwidth High Output Drive Single Supply Op Amp With Shutdown 14-SOIC 0 to 70 128MB DDR SDRAM
8-Bit, 20 kSPS ADC Serial Out, uProcessor Periph./Standalone, Rem. Op w/Ser. Data Link, Mux option 20-SOIC 128MB DDR SDRAM
Low Noise Precision Rail-To-Rail Output Operational Amplifier 8-PDIP 0 to 70 128MB DDR SDRAM
DIODE ZENER SINGLE 500mW 5.6Vz 0.05mA-Izt 0.05 2uA-Ir 4 SOD-123 3K/REEL 128MB DDR SDRAM
8-Bit, 392 kSPS ADC Parallel Out, Microprocessor Peripheral, On-Chip Track-and-Hold, Single Channels 20-SOIC 128MB DDR SDRAM
DIODE ZENER DUAL COMMON-CATHODE 300mW 5.6Vz 5mA-Izt 0.0714 0.1uA-Ir 1 SOT-23 3K/REEL 128MB DDR SDRAM
DIODE ZENER SINGLE 200mW 5.6Vz 0.05mA-Izt 0.05 2uA-Ir 4 SOD-323 3K/REEL 128MB DDR SDRAM
8-Bit, 20 kSPS ADC Serial Out, uProcessor Periph./Standalone, Rem. Op w/Ser. Data Link, Mux option 20-PDIP 128MB DDR SDRAM
DIODE ZENER DUAL COMMON-CATHODE 300mW 51Vz 5mA-Izt 0.0588 0.1uA-Ir 38 SOT-23 3K/REEL 128MB DDR SDRAM
10-Bit, 38 kSPS ADC Serial Out, On-Chip System Clock, 11 Ch. 20-SOIC 128MB DDR SDRAM
10-Bit, 38 kSPS ADC Serial Out, On-Chip System Clock, 11 Ch. 20-PLCC -40 to 125 128MB DDR SDRAM
DDR SDRAM Specification Version 1.0 DDR SDRAM的规范版.0
Dual Wide Bandwidth High Output Drive Single Supply Op Amp With Shutdown 14-PDIP -40 to 125 128MB DDR SDRAM
128Mb DDR SDRAM 128MB DDR SDRAM
8-Bit, 31 kSPS ADC Serial Out, Microprocessor Peripheral/Standalone, Single Channels 8-PDIP 128MB DDR SDRAM
8-Bit, 31 kSPS ADC Serial Out, Microprocessor Peripheral/Standalone, Single Channels 8-SOIC 128MB DDR SDRAM
DDR SDRAM Specification Version 1.0

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    UPD78F0034B UPD78F0034BGB-8EU UPD78F0034BGC-8BS UPD78F0034BYGBA-8EU UPD78F0034BYGCA-8BS UPD78F0034BGBA-8EU UPD78F0034BGK

NEC[NEC]
Part No. UPD78F0034B UPD78F0034BGB-8EU UPD78F0034BGC-8BS UPD78F0034BYGBA-8EU UPD78F0034BYGCA-8BS UPD78F0034BGBA-8EU UPD78F0034BGK-9ET UPD78F0034BYA UPD78F0034BA UPD78F0034BY UPD78F0034BYF1-CN3 UPD78F0034BYGC-8BS UPD78F0034BGCA-8BS UPD78F0034BGKA-9ET UPD78F0034BYGK-9ET UPD78F0034BF1-CN3 UPD78F0034BYGB-8EU UPD78F0034BYGKA-9ET UPD780018AY UPD780021A UPD780021AY UPD780022A UPD780022AY UPD780023A UPD780023AY UPD780024A UPD780024AS UPD780024AY UPD780031A UPD780031AY UPD780032A UPD780032AY UPD780033A UPD780033AY UPD780034A UPD780034AS UPD780034AY UPD780058 UPD780058Y UPD780065 UPD780078 UPD780078Y UPD78014H UPD78018F UPD78018FY UPD780208 UPD780232 UPD780308 UPD780308Y UPD780318 UPD780328 UPD780338 UPD780344 UPD780344Y UPD780354 UPD780354Y UPD78044F UPD78044H UPD78054 UPD78054Y UPD78058F UPD78058FY UPD78064 UPD78064B UPD78064Y UPD780701Y UPD780703Y UPD78070A UPD78070AY UPD78075B UPD78078 UPD78078Y UPD780816 UPD780828B UPD78083 UPD780833Y UPD780852 UPD780948 UPD780958 UPD780988 UPD78098B
Description 8-BIT SINGLE-CHIP MICROCONTROLLERS

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    C1206N39031G4C C0805N18031G4C CDR01BX152B3W4 C0805N16031G4C C0805N68131X4C C0805P68131X4C C1206N15031G4C C0805N12031G4C

KEMET Corporation
Part No. C1206N39031G4C C0805N18031G4C CDR01BX152B3W4 C0805N16031G4C C0805N68131X4C C0805P68131X4C C1206N15031G4C C0805N12031G4C CDR01BX221B3W4 CDR04BX473B3W4 C0805P47031G4C C0805N27031G4C C0805N22031G4C C0805P22031G4C C1206N11131G4C C0805N24031G4C C0805P1513114C CDR04BP122BJW4 C1206N20931G4C N82031G4C
Description CERAMIC CHIP CAPACITORS 陶瓷芯片电容

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    M38030MCL-XXXHP M38032MCL-XXXHP M38033MCL-XXXHP M38034MCL-XXXHP M38035MCL-XXXHP M38036MCL-XXXHP M38038F7-XXXHP M38038F7-

Renesas Electronics Corporation
Part No. M38030MCL-XXXHP M38032MCL-XXXHP M38033MCL-XXXHP M38034MCL-XXXHP M38035MCL-XXXHP M38036MCL-XXXHP M38038F7-XXXHP M38038F7-XXXSP M38038F7-XXXWG M38038F7L-XXXHP M38038F7L-XXXKP M38038F7L-XXXSP M38038F7L-XXXWG M38032F6-XXXHP M38032F6-XXXKP M38032F6-XXXSP M38032F6-XXXWG M38032M9-XXXHP M38032M9-XXXSP M38038F3-XXXHP M38038F3-XXXKP M38038F3-XXXSP M38038F3-XXXWG M38038F3L-XXXHP M38037MB-XXXHP M38030MF-XXXHP M38030MF-XXXKP M38030MF-XXXSP M38030MF-XXXWG M38032F3-XXXHP M38032F3-XXXKP M38032F3-XXXSP M38032F3-XXXWG M38032F3L-XXXHP M38032F3L-XXXKP M38031MCL-XXXHP M38036F9-XXXHP M38036F9-XXXKP M38036F9-XXXSP M38036F9-XXXWG M38032M9-XXXKP M38037F8-XXXHP M38037F8-XXXKP M38037F8-XXXSP M38037F8-XXXWG M38030MDL-XXXHP M38031MDL-XXXHP M38032MDL-XXXHP M38033MDL-XXXHP M38034MDL-XXXHP M38035MDL-XXXHP M38036MDL-XXXHP M38037MDL-XXXHP M38038MDL-XXXHP M38036F5-XXXHP M38036F5-XXXKP M38036F5-XXXSP M38036F5-XXXWG M38031MAL-XXXHP M38032F2-XXXHP M38032F2-XXXKP M38038F4-XXXHP M38038F4-XXXKP M38038F4-XXXSP M38038F4-XXXWG M38038F4L-XXXHP M38038F4L-XXXKP M38038F4L-XXXSP M38039MB-XXXHP M38039MB-XXXKP M38039MB-XXXSP M38033F9-XXXHP M38033F9-XXXKP M38033F9-XXXSP M38033F9-XXXWG M38030F7-XXXHP M38030F7-XXXKP M38030F7-XXXSP M38
Description SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER

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    K4H561638A-TCA0 K4H561638A-TCA2 K4H561638A-TCB0 K4H561638A-TLA2 K4H280838D-TCA0 K4H280838D-TCA2 K4H280838D-TLA2 K4H56083

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K4H561638A-TCA0 K4H561638A-TCA2 K4H561638A-TCB0 K4H561638A-TLA2 K4H280838D-TCA0 K4H280838D-TCA2 K4H280838D-TLA2 K4H560838D-TCA2 K4H560838D-TCB0 K4H560838D-TLA2 K4H560838D-TLB0 K4H560838D-TCA0 K4H560838D-TLA0 K4H561638C-TCA0 K4H561638C-TCA2 K4H561638C-TLA2 K4H560438 K4H560838A-TCA0 K4H560838A-TCA2 K4H560838A-TCB0 K4H560838A-TLA0 K4H560838A-TLA2 K4H560838A-TLB0 K4H560838B K4H560838B-TCA0 K4H560838B-TCA2 K4H560838B-TCB0 K4H560838B-TLA0 K4H560838B-TLA2 K4H560838B-TLB0 K4H560838C-TCA0 K4H560838C-TCA2 K4H560838C-TCB0 K4H560838C-TLA0 K4H560838C-TLA2 K4H560838C-TLB0 K4H1G0438A-TCA0 K4H1G0438A-TCA2 K4H1G0438A-TCB0 K4H1G0438A-TLA0 K4H1G0438A-TLA2 K4H1G0438A-TLB0 K4H1G0438B-TCA0 K4H1G0438B-TCA2 K4H1G0438B-TCB0 K4H1G0438B-TLA0 K4H1G0438B-TLA2 K4H1G0438B-TLB0 K4H1G0438C-TCA0 K4H1G0438C-TCA2 K4H1G0438C-TCB0 K4H1G0438C-TLA0 K4H1G0438C-TLA2 K4H1G0438C-TLB0 K4H1G0438D-TCA0 K4H1G0438D-TCA2 K4H1G0438D-TCB0 K4H1G0438D-TLA0 K4H1G0438D-TLA2 K4H1G0438D-TLB0 K4H1G0438E-TCA0 K4H281638E-TCB0 K4H561638A-TLA0 K4H561638A-TLB0 K4H561638C-TCB0 K4H561638C-TLA0 K4H561638C-TLB0 K4H561638D-TCA0 K4H561638D-TCA2 K4H643238M-TLB0 KM48L16031BT-G_LZ DDRSDRAM1111 K4H1G0438E-TCA2 K4H1G0438E-TCB0 K4H1G0438E-TLA0 K4H1G0438E-T
Description 128Mb F-die DDR SDRAM Specification
256Mb DDR SDRAM
DDR SDRAM Specification Version 1.0
128MB DDR SDRAM

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    意法半导
STMicroelectronics N.V.
Part No. ST92F124 ST92150 ST92F150 ST92F250 ST92124R2QB ST92F150C1 ST92124R2Q6 ST92124R2T6 ST92124R1TC ST92124R2TB ST92F124V1 ST92124R2QC ST92124R1QB ST92124R1Q6 ST92F124R9 ST92124R2TC ST92124R1T6 ST92124R1QC ST92124R1TB ST92124R9Q6 ST92124JR1Q6 ST92F150CV1TC ST92F150R2T6 ST92F250JV1TC ST92250DV2T6 ST92250DV2TC ST92F124JDV1QB ST92F124R2QB ST92124CR9QB ST92124CV9QC ST92124CV9Q6 ST92124CV9QB ST92F150DR9TC ST92124CR1TC ST92F150V9QC ST92124JDR1QB ST92124JCV1QB ST92124DV2QB ST92124DR2QB ST92F150V9TB ST92150CR2TB ST92124CV2QC ST92250JCV2QC ST92250JDV2QC ST92F150CV9QC ST92F124CV9QB ST92F150CV2TB ST92F124JDV2QC ST92150R2QC ST92124CR1Q6 ST92F150CV2QC ST92124V1QB ST92124R9QB ST92124JCR1TB ST92124JCR2TB ST92150JCR9T6 ST92124JDV2Q6 ST92F124CR1QB ST92F124CV1QB ST92124JR1QB ST92124JR9TC ST92124JR2T6 ST92150JCR9QC ST92150JCR2QC ST92F124JCR9QB -ST92150V1Q6 -ST92250CR2T6 -ST92250CR1QC -ST92250CR1T6 -ST92250CR1TB -ST92250CR1TC -ST92250CR2TC -ST92250CR9QB
Description Dual Common Anode Zeners 27 V SOT-23; Package: SOT-23 (TO-236) 3 LEAD; No of Pins: 3; Container: Tape and Reel; Qty per Container: 3000
Zener Diode 225 mW 19 V ±5% SOT-23; Package: SOT-23 (TO-236) 3 LEAD; No of Pins: 3; Container: Tape and Reel; Qty per Container: 3000
Zener Diode 225 mW 20 V ±5% SOT-23; Package: SOT-23 (TO-236) 3 LEAD; No of Pins: 3; Container: Tape and Reel; Qty per Container: 3000
CW SW SPT: HCS08 C COM
Zener Diode 225 mW 28 V ±5% SOT-23; Package: SOT-23 (TO-236) 3 LEAD; No of Pins: 3; Container: Tape and Reel; Qty per Container: 3000
150 Watt 20V TVS Quad Array; Package: SC-74 (SC-59ML) 6 LEAD; No of Pins: 6; Container: Tape and Reel; Qty per Container: 3000
CAP 1UF 50V 10% X7R SMD-2220 TR-7 PLATED-NI/SN
Octal Buffers/Drivers 24-PDIP -40 to 85 16位产品单电压闪存MCU的家庭的RAM,EEPROM的E3展TMEMULATED,可2.0b和J1850 BLPD
Octal Buffers/Drivers 24-TSSOP -40 to 85 16位产品单电压闪存MCU的家庭的RAM,EEPROM的E3展TMEMULATED,可2.0b和J1850 BLPD
225 W e-Rated Zener 8.2 V SOT-23; Package: SOT-23 (TO-236) 3 LEAD; No of Pins: 3; Container: Tape and Reel; Qty per Container: 3000 16位产品单电压闪存MCU的家庭的RAMEEPROME3展TMEMULATED,可.0b和J1850 BLPD
Zener Diode 225 mW 15 V &#177;5% SOT-23; Package: SOT-23 (TO-236) 3 LEAD; No of Pins: 3; Container: Tape and Reel; Qty per Container: 10000 16位产品单电压闪存MCU的家庭的RAM,EEPROM的E3展TMEMULATED,可.0b和J1850 BLPD
8/16-BIT SINGLE VOLTAGE FLASH MCU FAMILY WITH RAM, E3 TMEMULATED EEPROM, CAN 2.0B AND J1850 BLPD 16位产品单电压闪存MCU的家庭的RAM,EEPROM的E3展TMEMULATED,可.0b和J1850 BLPD
Zener Diode 225 mW 47 V &#177;5% SOT-23; Package: SOT-23 (TO-236) 3 LEAD; No of Pins: 3; Container: Tape and Reel; Qty per Container: 3000 16位产品单电压闪存MCU的家庭的RAM,EEPROM的E3展TMEMULATED,可.0b和J1850 BLPD
CLAMP METER, AC/DC, TRMS 800A RoHS Compliant: NA 16位产品单电压闪存MCU的家庭的RAM,EEPROM的E3展TMEMULATED,可.0b和J1850 BLPD
150 Watt 22V TVS Quad Array; Package: SC-74 (SC-59ML) 6 LEAD; No of Pins: 6; Container: Tape and Reel; Qty per Container: 3000 16位产品单电压闪存MCU的家庭的RAM,EEPROM的E3展TMEMULATED,可.0b和J1850 BLPD
Quadruple 2-Line To 1-Line Data Selectors/Multiplexers With 3-State Outputs 20-TSSOP -40 to 85 16位产品单电压闪存MCU的家庭的RAM,EEPROM的E3展TMEMULATED,可.0b和J1850 BLPD
225 W e-Rated Zener 33 V SOT-23; Package: SOT-23 (TO-236) 3 LEAD; No of Pins: 3; Container: Tape and Reel; Qty per Container: 3000 16位产品单电压闪存MCU的家庭的RAM,EEPROM的E3TMEMULATED,可.0b和J1850 BLPD
Dual Common Anode Zeners 33 V SOT-23; Package: SOT-23 (TO-236) 3 LEAD; No of Pins: 3; Container: Tape and Reel; Qty per Container: 3000 16位产品单电压闪存MCU的家庭的RAM,EEPROM的E3TMEMULATED,可.0b和J1850 BLPD
Zener Diode 225 mW 33 V &#177;5% SOT-23; Package: SOT-23 (TO-236) 3 LEAD; No of Pins: 3; Container: Tape and Reel; Qty per Container: 3000 16位产品单电压闪存MCU的家庭的RAM,EEPROM的E3TMEMULATED,可.0b和J1850 BLPD
Low Current Operation at 250 ,Low Reverse Leakage,Low Noise Zener Diode 250 的低电流运算,低反向泄露,低噪声稳压二极
8/16-BIT SINGLE VOLTAGE FLASH MCU FAMILY WITH RAM, E3 TMEMULATED EEPROM, CAN 2.0B AND J1850 BLPD 16位产品单电压闪存MCU的家庭的RAM,EEPROME3展TMEMULATED,可.0b和J1850 BLPD
8/16-BIT SINGLE VOLTAGE FLASH MCU FAMILY WITH RAM, E3 TMEMULATED EEPROM, CAN 2.0B AND J1850 BLPD 16位产品单电压闪存MCU的家庭的RAM,EEPROM的E3TMEMULATED,可.0b和J1850 BLPD
Zener Diode 225 mW 30 V &#177;5% SOT-23; Package: SOT-23 (TO-236) 3 LEAD; No of Pins: 3; Container: Tape and Reel; Qty per Container: 3000 16位产品单电压闪存MCU的家庭的RAM,EEPROM的E3展TMEMULATED,可.0b和J1850 BLPD
Zener Diode 225 mW 5.1 V &#177;5% SOT-23; Package: SOT-23 (TO-236) 3 LEAD; No of Pins: 3; Container: Tape and Reel; Qty per Container: 3000 16位产品单电压闪存MCU的家庭的RAM,EEPROM的E3展TMEMULATED,可.0b和J1850 BLPD
TRANSISTOR PNP 32V 0.5A SOT-346

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    XC25BS8051ER-G XC25BS8051MR-G XC25BS8041MR XC25BS8041MR-G XC25BS8025ER XC25BS8025ER-G XC25BS8025MR XC25BS8025MR-G XC25BS

http://
Torex Semiconductor
Part No. XC25BS8051ER-G XC25BS8051MR-G XC25BS8041MR XC25BS8041MR-G XC25BS8025ER XC25BS8025ER-G XC25BS8025MR XC25BS8025MR-G XC25BS8031MR-G XC25BS8046ER XC25BS8046ER-G XC25BS8025 XC25BS8026 XC25BS8026ER XC25BS8026ER-G XC25BS8026MR XC25BS8026MR-G XC25BS8027 XC25BS8027ER XC25BS8027ER-G XC25BS8027MR XC25BS8027MR-G XC25BS8028 XC25BS8028ER XC25BS8028ER-G XC25BS8028MR XC25BS8028MR-G XC25BS8029 XC25BS8029ER XC25BS8029ER-G XC25BS8029MR XC25BS8029MR-G XC25BS8058MR-G XC25BS8038MR-G XC25BS8048MR-G XC25BS8052ER XC25BS8052ER-G XC25BS8052MR XC25BS8052MR-G XC25BS8034ER XC25BS8034ER-G XC25BS8031ER XC25BS8031ER-G XC25BS8050 XC25BS8050ER XC25BS8051MR XC25BS8037MR-G XC25BS8055ER XC25BS8055ER-G XC25BS8055MR XC25BS8055MR-G XC25BS8053ER XC25BS8053ER-G XC25BS8053MR XC25BS8053MR-G XC25BS8050ER-G XC25BS8051ER XC25BS8040ER-G XC25BS8040 XC25BS8040ER XC25BS8040MR XC25BS8040MR-G XC25BS8041 XC25BS8041ER XC25BS8041ER-G XC25BS8042 XC25BS8042ER XC25BS8042ER-G XC25BS8042MR XC25BS8042MR-G XC25BS8043 XC25BS8043ER XC25BS8043ER-G XC25BS8043MR XC25BS8043MR-G XC25BS8044 XC25BS8044ER XC25BS8044ER-G XC25BS8044MR XC25BS8044MR-G XC25BS8045 XC25BS8045ER XC25BS8045ER-G XC25BS8045MR XC25BS8045MR-G XC25BS8036ER XC25BS8036ER-G XC25BS8035ER
Description Ultra Small PLL Clock Generator ICs with Built-In Divider/Multiplier Circuits

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    CRA06P0830000FTA CRA06P0830000FTC CRA06P0830000GTA CRA06P0830000GTC CRA06P0830000JTA CRA06P0830000JTC CRA06P0830000ZTA C

Vishay Intertechnology, Inc.
Vishay Intertechnology,Inc.
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Vishay Siliconix
Part No. CRA06P0830000FTA CRA06P0830000FTC CRA06P0830000GTA CRA06P0830000GTC CRA06P0830000JTA CRA06P0830000JTC CRA06P0830000ZTA CRA06P0830000ZTC CRA06P08310K0FTA CRA06P08310K0FTC CRA06P08310K0GTA CRA06P08310K0GTC CRA06P08310M0FTA CRA06P08310M0FTC CRA06P08310M0GTA CRA06P08310M0GTC CRA06P08310M0JTA CRA06P08310M0JTC CRA06P08310M0ZTA CRA06P08310M0ZTC CRA06P0803100GRT6 CRA06P08034702FRT1 CRA06P08034702FRT6 CRA06P0803000JRT1 CRA06P080310R0JRT1 CRA06P08034702JRT1 CRA06P0803473JRT1 CRA06P0803000JRT6 CRA06P0803100JRT6 CRA06P080310R0JRT6 CRA06P08034702JRT6 CRA06P0803473JRT6 CRA06P0803000FRT1 CRA06P0803000GRT1 CRA06P0803000GRT6 CRA06P0803000ZRT6 CRA06P0803000ZRT1 CRA06P CRA06P0803100ZRT6 CRA06P080310R0ZRT6 CRA06P080310R0FRT6 CRA06P080310R0GRT6 CRA06P0803100GRT1
Description Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Aluminum; Series:PT06; No. of Contacts:16; Connector Shell Size:20; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Body Style:Straight 厚膜电阻阵列
PT 3C 3#20 PIN PLUG 厚膜电阻阵列
Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Aluminum; Series:PT06; No. of Contacts:3; Connector Shell Size:8; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Body Style:Straight 厚膜电阻阵列
Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Aluminum; Series:PT06; No. of Contacts:2; Connector Shell Size:8; Connecting Termination:Solder; Circular Shell Style:Straight Plug 厚膜电阻阵列
Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Aluminum; Series:PT06; No. of Contacts:4; Connector Shell Size:8; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Body Style:Straight 厚膜电阻阵列
Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Aluminum; Series:PT06; Number of Contacts:41; Connector Shell Size:20; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Body Style:Straight 厚膜电阻阵列
PT 32C 32#20 PIN PLUG 厚膜电阻阵列
CAP 2.2PF 50V /-0.5PF NPO(C0G) SMD-0603 TR-7-PA 厚膜电阻阵列
Thick Film Resistor Array 厚膜电阻阵列
Circular Connector; No. of Contacts:23; Series:; Body Material:Aluminum; Connecting Termination:Solder; Connector Shell Size:16; Circular Contact Gender:Pin; Circular Shell Style:Straight Plug; Insert Arrangement:16-99
Aluminum Electrolytic Radial Lead Extremely Low Impedance Capacitor; Capacitance: 1800uF; Voltage: 10V; Case Size: 12.5x20 mm; Packaging: Bulk

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    M38039FC-XXXHP M38035FEL-XXXHP M38035FEL-XXXKP M38035FEL-XXXSP M38035FEL-XXXWG M38031F8-XXXHP M38035F2-XXXHP M38035F2-XX

Renesas Electronics Corporation
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Part No. M38039FC-XXXHP M38035FEL-XXXHP M38035FEL-XXXKP M38035FEL-XXXSP M38035FEL-XXXWG M38031F8-XXXHP M38035F2-XXXHP M38035F2-XXXKP M38035F2-XXXSP M38035F2-XXXWG M38035F2L-XXXHP M38035F2L-XXXKP M38035F2L-XXXSP M38035F2L-XXXWG M38033M6-XXXHP M38033M6-XXXKP M38033M6-XXXSP M38033M6-XXXWG M38033M6L-XXXHP M38033M6L-XXXKP M38033M6L-XXXSP M38033M6L-XXXWG M38033M4-XXXHP M38033M4-XXXKP M38033M4-XXXSP M38033M4-XXXWG M38033M4L-XXXHP M38033M4L-XXXKP M38033M4L-XXXSP M38033M4L-XXXWG M38033M2-XXXHP M38033M2-XXXKP M38033M2-XXXSP M38033M2-XXXWG M38033M2L-XXXHP M38033M2L-XXXKP M38033M2L-XXXSP M38033M2L-XXXWG M38038M4-XXXHP M38034ME-XXXHP M38034ME-XXXKP M38034ME-XXXSP M38038MFL-XXXKP M38038MFL-XXXSP M38038MFL-XXXWG M38037MAL-XXXHP M38037F6L-XXXHP M38037F6L-XXXKP M38037F6L-XXXSP M38037F6L-XXXWG M38032ME-XXXHP M38032ME-XXXKP M38032ME-XXXSP M38032ME-XXXWG M38035F7-XXXHP M38035F7-XXXKP M38035F7-XXXSP M38035F7-XXXWG M38030F7L-XXXHP M38031F7L-XXXHP M38032F7L-XXXHP M38033F7L-XXXHP M38034F7L-XXXHP M38035F7L-XXXHP M38036F7L-XXXHP M38037F7L-XXXHP M38039F7L-XXXHP M38033MCL-XXXKP M38033MCL-XXXSP M38033MCL-XXXWG M38037F7-XXXHP M38037F7-XXXKP M38037F7-XXXSP M38037F7-XXXWG M38030FAL-XXXHP M38031FAL-XXXHP M38032FAL-XXXHP M3
Description SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER
   SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER

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    Renesas Electronics Corporation.
Renesas Electronics, Corp.
Part No. M38030F2L-XXXHP M38030F2L-XXXKP M38030F2L-XXXSP M38030F2L-XXXWG M38030MAL-XXXWG M38030MAL-XXXKP M38030FAL-XXXSP M38031FAL-XXXHP M38030FAL-XXXWG M38030MAL-XXXHP M38030FAL-XXXKP M38031FAL-XXXKP M38030FAL-XXXHP M38031FAL-XXXSP M38031FAL-XXXWG M38030MAL-XXXSP M38030F3L-XXXHP M38030F3L-XXXWG M38030M3L-XXXKP M38030F3L-XXXSP M38030F3L-XXXKP M38030M3L-XXXHP M38030FBL-XXXWG M38030MBL-XXXHP M38030FBL-XXXHP M38030FBL-XXXSP M38030MBL-XXXKP M38030M2L-XXXHP M38030M2L-XXXKP M38030M2L-XXXSP M38030M2L-XXXWG M38031F2L-XXXHP M38031F2L-XXXKP M38031F2L-XXXSP M38031F2L-XXXWG M38030FB-XXXHP M38031FBL-XXXSP M38035MBL-XXXSP M38038FBL-XXXSP M38039FBL-XXXSP M38030MBL-XXXSP M38036MBL-XXXSP M38037FBL-XXXSP M38037MBL-XXXSP M38036FBL-XXXSP M38038MBL-XXXSP M38031FC-XXXHP M38031FC-XXXKP M38031FC-XXXWG M38031FCL-XXXHP M38031FCL-XXXKP M38031FCL-XXXSP M38031FCL-XXXWG M38031F5-XXXKP M38031F5-XXXSP M38031F5-XXXWG M38031F5L-XXXHP M38031F5L-XXXKP M38031F5L-XXXSP M38031F5L-XXXWG M38030F1-XXXHP M38030F1-XXXKP M38030F1-XXXSP M38030F1-XXXWG M38030F1L-XXXHP M38030F1L-XXXKP M38030F1L-XXXSP M38030F1L-XXXWG M38031F1-XXXKP M38031F1-XXXWG M38031F1L-XXXHP M38031F1L-XXXKP M38031F6-XXXHP M38031F6-XXXKP M38031F6-XXXSP M38031F6-XXXWG M
Description 256 Kbit (32K x 8) nvSRAM; Organization: 32Kb x 8; Vcc (V): 2.7 to 3.6 V; Density: 256 Kb; Package: SOIC
3.3V Zero Delay Clock Buffer; Voltage (V): 3.3 V; Frequency Range: 10 MHz to 133 MHz; Outputs: 5; Operating Range: 0 to 70 C
256K (32K x 8) Static RAM; Density: 256 Kb; Organization: 32Kb x 8; Vcc (V): 4.50 to 5.50 V;
Three-PLL General Purpose FLASH Programmable Clock Generator; Voltage (V): 3.3 V; Input Range: 1 MHz to 166 MHz; Output Range: 1 MHz to 200 MHz; Outputs: 6
5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 256; Vcc (V): 3.3; fMax (MHz): 66; tPD (ns): 12
8-Mbit (512K x 16) Static RAM; Density: 8 Mb; Organization: 512Kb x 16; Vcc (V): 2.20 to 3.60 V;
9-Mbit (256K x 36/512K x 18) Pipelined SRAM; Architecture: Standard Sync, Pipeline SCD; Density: 9 Mb; Organization: 512Kb x 18; Vcc (V): 3.1 to 3.6 V
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM; Architecture: Standard Sync, Flow-through; Density: 9 Mb; Organization: 512Kb x 18; Vcc (V): 3.1 to 3.6 V
18-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; Density: 18 Mb; Organization: 512Kb x 36; Vcc (V): 1.7 to 1.9 V
Four Output PCI-X and General Purpose Buffer; Voltage (V): 3.3 V; Frequency Range: 0 MHz to 140 MHz; Outputs: 4; Operating Range: 0 to 70 C
18-Mbit QDR(TM)-II SRAM 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 18 Mb; Organization: 512Kb x 36; Vcc (V): 1.7 to 1.9 V
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBL(TM) Architecture; Architecture: NoBL, Flow-through; Density: 9 Mb; Organization: 512Kb x 18; Vcc (V): 3.1 to 3.6 V
9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 9 Mb; Organization: 512Kb x 18; Vcc (V): 2.4 to 2.6 V
4-Mbit (512K x 8) Static RAM; Density: 4 Mb; Organization: 512Kb x 8; Vcc (V): 4.50 to 5.50 V;
4-Mbit (256K x 16) Static RAM; Density: 4 Mb; Organization: 256Kb x 16; Vcc (V): 2.20 to 3.60 V;
64K x 16 Static RAM; Density: 1 Mb; Organization: 64Kb x 16; Vcc (V): 3.0 to 3.6 V;
1-Mbit (64K x 16) Static RAM; Density: 1 Mb; Organization: 64Kb x 16; Vcc (V): 4.5 to 5.5 V;
9-Mbit (256K x 36/512K x 18) Pipelined SRAM; Architecture: Standard Sync, Pipeline SCD; Density: 9 Mb; Organization: 256Kb x 36; Vcc (V): 3.1 to 3.6 V
1-Mbit (64K x 16) Static RAM; Density: 1 Mb; Organization: 64Kb x 16; Vcc (V): 3.0 to 3.6 V;
4 Mbit (512K x 8/256K x 16) nvSRAM; Organization: 512Kb x 8; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: TSOP
4 Mbit (512K x 8/256K x 16) nvSRAM; Organization: 256Kb x 16; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: TSOP
16-Mbit (1M x 16 / 2M x 8) Static RAM; Density: 16 Mb; Organization: 1Mb x 16; Vcc (V): 4.50 to 5.50 V;
4K x 16/18 and 8K x 16/18 Dual-Port Static RAM with SEM, INT, BUSY; Density: 128 Kb; Organization: 8Kb x 16; Vcc (V): 4.5 to 5.5 V; Speed: 35 ns
9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 9 Mb; Organization: 256Kb x 36; Vcc (V): 3.1 to 3.6 V
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBL(TM) Architecture; Architecture: NoBL, Flow-through; Density: 9 Mb; Organization: 256Kb x 36; Vcc (V): 3.1 to 3.6 V
9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 9 Mb; Organization: 256Kb x 36; Vcc (V): 2.4 to 2.6 V
9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 9 Mb; Organization: 512Kb x 18; Vcc (V): 3.1 to 3.6 V
8-Mbit (512K x 16) Static RAM; Density: 8 Mb; Organization: 512Kb x 16; Vcc (V): 4.50 to 5.50 V;
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM; Architecture: Standard Sync, Flow-through; Density: 9 Mb; Organization: 256Kb x 36; Vcc (V): 3.1 to 3.6 V
256K x 16 Static RAM; Density: 4 Mb; Organization: 256Kb x 16; Vcc (V): 4.5 to 5.5 V;
9-Mbit (256K x 36/512K x 18) Pipelined DCD Sync SRAM; Architecture: Standard Sync, Pipeline DCD; Density: 9 Mb; Organization: 256Kb x 36; Vcc (V): 3.1 to 3.6 V
4-Mbit (256K x 16) Static RAM; Density: 4 Mb; Organization: 256Kb x 16; Vcc (V): 3.0 to 3.6 V;
8-Mbit (1024K x 8) Static RAM; Density: 8 Mb; Organization: 1Mb x 8; Vcc (V): 2.20 to 3.60 V;
18-Mbit (512K x 36/1M x 18) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 18 Mb; Organization: 512Kb x 36; Vcc (V): 3.1 to 3.6 V
256K x 16 Static RAM; Density: 4 Mb; Organization: 256Kb x 16; Vcc (V): 3.0 to 3.6 V;
8-Mbit (1M x 8) Static RAM; Density: 8 Mb; Organization: 1Mb x 8; Vcc (V): 2.20 to 3.60 V;
3.3V Zero Delay Buffer; Voltage (V): 3.3 V; Frequency Range: 10 MHz to 133 MHz; Outputs: 8; Operating Range: -40 to 85 C
Programmable Skew Clock Buffer; Voltage (V): 5.0 V; Operating Frequency: 3.75 MHz to 80 MHz; Outputs: 8; Operating Range: -40 to 85 C
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBL(TM) Architecture; Architecture: NoBL, Flow-through; Density: 18 Mb; Organization: 512Kb x 36; Vcc (V): 3.1 to 3.6 V
18-Mbit (512K x 36/1M x 18) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 18 Mb; Organization: 1Mb x 18; Vcc (V): 3.1 to 3.6 V
512K x 8 Static RAM; Density: 4 Mb; Organization: 512Kb x 8; Vcc (V): 4.5 to 5.5 V;
18-Mbit (512K x 36/1M x 18) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 18 Mb; Organization: 512Kb x 36; Vcc (V): 2.4 to 2.6 V
2.5V or 3.3V, 200-MHz, 1:12 Clock Distribution Buffer; Voltage (V): 2.5/3.3 V; Frequency Range: 0 MHz to 200 MHz; Outputs: 12; Operating Range: -40 to 85 C
3.3V Zero Delay Clock Buffer; Voltage (V): 3.3 V; Frequency Range: 10 MHz to 133 MHz; Outputs: 5; Operating Range: -40 to 85 C
2M x 8 Static RAM; Density: 16 Mb; Organization: 2Mb x 8; Vcc (V): 3.0 to 3.6 V;
16 Mbit (512K X 32) Static RAM; Density: 16 Mb; Organization: 512Kb x 32; Vcc (V): 3.0 to 3.6 V;
3.3V Zero Delay Buffer; Voltage (V): 3.3 V; Frequency Range: 10 MHz to 133 MHz; Outputs: 8; Operating Range: 0 to 70 C
8-Mbit (1M x 8) Static RAM; Density: 8 Mb; Organization: 1Mb x 8; Vcc (V): 3.0 to 3.6 V;
5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 64; Vcc (V): 5; fMax (MHz): 125; tPD (ns): 6
2-Mbit (128K x 16) Static RAM; Density: 2 Mb; Organization: 128Kb x 16; Vcc (V): 3.0 to 3.6 V;
16-Mbit (1M x 16) Static RAM; Density: 16 Mb; Organization: 1Mb x 16; Vcc (V): 3.0 to 3.6 V;
4-Mbit (256K x 18) Pipelined DCD Sync SRAM; Architecture: Standard Sync, Pipeline DCD; Density: 4 Mb; Organization: 256Kb x 18; Vcc (V): 3.1 to 3.6 V
512K (32K x 16) Static RAM; Density: 512 Kb; Organization: 32Kb x 16; Vcc (V): 3.0 to 3.6 V;
4-Mbit (128K x 36) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 4 Mb; Organization: 128Kb x 36; Vcc (V): 3.1 to 3.6 V
1M x 16 Static RAM; Density: 16 Mb; Organization: 1Mb x 16; Vcc (V): 3.0 to 3.6 V;
Programmable Skew Clock Buffer; Voltage (V): 5.0 V; Operating Frequency: 3.75 MHz to 80 MHz; Outputs: 8; Operating Range: 0 to 70 C
3.3V Zero Delay Clock Buffer; Voltage (V): 3.3 V; Frequency Range: 10 MHz to 133 MHz; Outputs: 9; Operating Range: 0 to 70 C
MoBL(R) 2 Mbit (128K x 16) Static RAM; Density: 2 Mb; Organization: 128Kb x 16; Vcc (V): 2.20 to 3.60 V;
Rambus(R) XDR(TM) Clock Generator; VDD: 2.5 V; Input Frequency: 100 MHz to 133 MHz; Output Frequency: 300 MHz to 800 MHz; # Out: 4
2-Mbit (128K x 16) Static RAM; Density: 2 Mb; Organization: 128Kb x 16; Vcc (V): 2.20 to 3.60 V;
4-Mbit (128K x 36) Pipelined Sync SRAM; Architecture: Standard Sync, Pipeline SCD; Density: 4 Mb; Organization: 128Kb x 36; Vcc (V): 3.1 to 3.6 V
5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 128; Vcc (V): 5; fMax (MHz): 167; tPD (ns): 7
2.5V or 3.3V, 200-MHz, 1:10 Clock Distribution Buffer; Voltage (V): 2.5/3.3 V; Frequency Range: 0 MHz to 200 MHz; Outputs: 10; Operating Range: 0 to 70 C
5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 128; Vcc (V): 5; fMax (MHz): 100; tPD (ns): 7
5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 128; Vcc (V): 5; fMax (MHz): 125; tPD (ns): 7
18-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 18 Mb; Organization: 512Kb x 36; Vcc (V): 1.7 to 1.9 V
Low Voltage Programmable Skew Clock Buffer; Voltage (V): 3.3 V; Operating Frequency: 3.75 MHz to 80 MHz; Outputs: 8; Operating Range: 0 to 70 C
Spread Spectrum Clock Generator; Voltage(V): 3.3 V; Input Frequency Range: 25 MHz to 100 MHz; Output Frequency Range: 25 MHz to 100 MHz; Operating Range: 0 to 70 C; Package: SOIC
Low Skew Clock Buffer; Voltage (V): 5.0 V; Operating Frequency: 3.75 MHz to 80 MHz; Outputs: 8; Operating Range: 0 to 70 C
5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 64; Vcc (V): 3.3; fMax (MHz): 143; tPD (ns): 9 单芯位CMOS微机
5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 64; Vcc (V): 5; fMax (MHz): 154; tPD (ns): 6 单芯位CMOS微机
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER 单芯位CMOS微机
5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 64; Vcc (V): 3.3; fMax (MHz): 100; tPD (ns): 9 单芯位CMOS微机
5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 128; Vcc (V): 3.3; fMax (MHz): 83; tPD (ns): 10 单芯位CMOS微机
5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 64; Vcc (V): 5; fMax (MHz): 125; tPD (ns): 6 单芯位CMOS微机
Three-PLL General-Purpose EPROM Programmable Clock Generator; Voltage (V): 3.3/5.0 V; Input Range: 1 MHz to 30 MHz; Output Range: .077 MHz to 100 MHz; Outputs: 6 单芯位CMOS微机
8-Mbit (512K x 16) MoBL(R) Static RAM; Density: 8 Mb; Organization: 512Kb x 16; Vcc (V): 2.20 to 3.60 V; 单芯位CMOS微机
High Speed Low Voltage Programmable Skew Clock Buffer; Voltage (V): 3.3 V; Operating Frequency: 3.75 MHz to 110 MHz; Outputs: 8; Operating Range: 0 to 70 C 单芯位CMOS微机
3.3V SDRAM Buffer for Mobile PCs with 4 SO-DIMMs; Voltage (V): 3.3 V; Frequency Range: 0 MHz to 100 MHz; Outputs: 10; Operating Range: 0 to 70 C 单芯位CMOS微机
3.3V Zero Delay Clock Buffer; Voltage (V): 3.3 V; Frequency Range: 10 MHz to 133 MHz; Outputs: 9; Operating Range: -40 to 85 C 单芯位CMOS微机
Programmable Skew Clock Buffer; Voltage (V): 5.0 V; Operating Frequency: 3.75 MHz to 80 MHz; Outputs: 8; Operating Range: -40 to 85 C 单芯位CMOS微机
2-Mbit (128K x 16) Static RAM; Density: 2 Mb; Organization: 128Kb x 16; Vcc (V): 3.0 to 3.6 V; 单芯位CMOS微机
MoBL(R) 1 Mbit (128K x 8) Static RAM; Density: 1 Mb; Organization: 128Kb x 8; Vcc (V): 2.20 to 3.60 V; 单芯位CMOS微机
18-Mbit QDR(TM)-II SRAM 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 18 Mb; Organization: 1Mb x 18; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机
1-Mbit (128K x 8) Static RAM; Density: 1 Mb; Organization: 128Kb x 8; Vcc (V): 4.50 to 5.50 V; 单芯位CMOS微机
4-Mbit (256K x 18) Pipelined Sync SRAM; Architecture: Standard Sync, Pipeline SCD; Density: 4 Mb; Organization: 256Kb x 18; Vcc (V): 3.1 to 3.6 V 单芯位CMOS微机
2-Mbit (64K x 32) Pipelined Sync SRAM; Architecture: Standard Sync, Pipeline SCD; Density: 2 Mb; Organization: 64Kb x 32; Vcc (V): 3.1 to 3.6 V 单芯位CMOS微机
200-MHz Field Programmable Zero Delay Buffer; Voltage (V): 2.5/3.3 V; Frequency Range: 10 MHz to 200 MHz; Outputs: 12; Operating Range: -40 to 85 C 单芯位CMOS微机
2-Mbit (128K x 16) Static RAM; Density: 2 Mb; Organization: 128Kb x 16; Vcc (V): 2.20 to 3.60 V; 单芯位CMOS微机
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER 单芯8位CMOS微机
2-Mbit (256K x 8) Static RAM; Density: 2 Mb; Organization: 256Kb x 8; Vcc (V): 2.20 to 3.60 V; 单芯8位CMOS微机
Very Low Jitter Field and Factory Programmable Clock Generator; Voltage (V): 3.3 V; Input Range: 10 MHz to 133 MHz; Output Range: 20 MHz to 200 MHz; Outputs: 2 单芯位CMOS微机
3.3V Zero Delay Clock Buffer; Voltage (V): 3.3 V; Frequency Range: 10 MHz to 133 MHz; Outputs: 5; Operating Range: 0 to 70 C 单芯位CMOS微机
3.3V Zero Delay Clock Buffer; Voltage (V): 3.3 V; Frequency Range: 10 MHz to 133 MHz; Outputs: 5; Operating Range: -40 to 85 C 单芯位CMOS微机
Three-PLL General Purpose FLASH Programmable Clock Generator; Voltage (V): 3.3 V; Input Range: 1 MHz to 166 MHz; Output Range: 0 MHz to 200 MHz; Outputs: 3 单芯位CMOS微机
1:8 Clock Fanout Buffer; Voltage (V): 3.3 V; Frequency Range: 0 MHz to 350 MHz; Outputs: 8; Operating Range: -40 to 85 C 单芯位CMOS微机
Quad PLL Clock Generator with 2-Wire Serial Interface; Voltage (V): 2.5/3.3 V; Input Range: 27 MHz to 27 MHz; Output Range: 4.2 MHz to 166 MHz; Outputs: 5 单芯位CMOS微机
2.5V or 3.3V, 200-MHz, 1:12 Clock Distribution Buffer; Voltage (V): 2.5/3.3 V; Frequency Range: 0 MHz to 200 MHz; Outputs: 12; Operating Range: 0 to 70 C 单芯位CMOS微机
3.3V Zero Delay Clock Buffer; Voltage (V): 3.3 V; Frequency Range: 10 MHz to 133 MHz; Outputs: 9; Operating Range: 0 to 70 C 单芯位CMOS微机
High Speed Multi-phase PLL Clock Buffer; Voltage (V): 3.3 V; Operating Frequency: 24 MHz to 200 MHz; Outputs: 11; Operating Range: 0 to 70 C 单芯位CMOS微机
2.5V or 3.3V, 200-MHz, 1:18 Clock Distribution Buffer; Voltage (V): 2.5/3.3 V; Frequency Range: 0 MHz to 200 MHz; Outputs: 18; Operating Range: -40 to 85 C 单芯位CMOS微机
-bit AVR Microcontroller with 8K Bytes In- System Programmable Flash 位AVR微控制器具有8K字节的系统内可编程闪
2.5V or 3.3V, 200-MHz, 1:12 Clock Distribution Buffer; Voltage (V): 2.5/3.3 V; Frequency Range: 0 MHz to 200 MHz; Outputs: 12; Operating Range: 0 to 70 C
1:8 Clock Fanout Buffer; Voltage (V): 3.3 V; Frequency Range: 0 MHz to 350 MHz; Outputs: 8; Operating Range: 0 to 70 C
Spread Spectrum Clock Generator; Voltage(V): 3.3 V; Input Frequency Range: 4 MHz to 32 MHz; Output Frequency Range: 4 MHz to 32 MHz; Operating Range: 0 to 70 C; Package: SOIC
High Speed Low Voltage Programmable Skew Clock Buffer; Voltage (V): 3.3 V; Operating Frequency: 3.75 MHz to 110 MHz; Outputs: 8; Operating Range: 0 to 70 C
5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 64; Vcc (V): 3.3; fMax (MHz): 100; tPD (ns): 9

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