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  operation2 Datasheet PDF File

For operation2 Found Datasheets File :: 19    Search Time::1.625ms    
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    NE5209 NE5209D NE5209N SA5209D SA5209N SA5209

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. NE5209 NE5209D NE5209N SA5209D SA5209N SA5209
OCR Text ...swing (single-ended) for linear operation2 Maximum output voltage swing (single-ended) for linear operation2 Noise figure (unmatched configuration) Equivalent input noise voltage spectral density Reverse isolation Gain supply sensitivity (s...
Description Wideband variable gain amplifier

File Size 305.69K  /  15 Page

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    PHILIPS[Philips Semiconductors]
Part No. SA5209 SA5209N SA5209D
OCR Text ...swing (single-ended) for linear operation2 Maximum output voltage swing (single-ended) for linear operation2 Over temperature1 Noise figure (unmatched configuration) Equivalent input noise voltage spectral density Reverse isolation Gain ...
Description Wideband variable gain amplifier

File Size 206.26K  /  17 Page

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    LRS1331

SHARP[Sharp Electrionic Components]
Part No. LRS1331
OCR Text ...2 2 2 1 1 2 2 2 FIRST BUS CYCLE operation2 Write Write Write Write Write Write Write Write Write Write Write Write ADDRESS3 XA XA XA XA BA XA WA XA XA BA XA XA DATA3 FFH 90H 70H 50H 20H 30H 40H or 10H B0H D0H 60H 60H 60H Write Write Write B...
Description Stacked Chip 16M Flash Memory and 4M SRAM

File Size 213.86K  /  26 Page

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    LRS1341 LRS1342

SHARP[Sharp Electrionic Components]
Part No. LRS1341 LRS1342
OCR Text ...XA XA XA XA BA WA XA XA 3 operation2 ADDRESS3 DATA3 NOTES 4 5 5 5 5 40H or 10H B0H D0H NOTES: 1. Commands other than those shown in table are reserved by SHARP for future device implementations and should not be u...
Description Stacked Chip 16M Flash Memory and 2M SRAM

File Size 195.04K  /  24 Page

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    PHN70308

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. PHN70308
OCR Text ...tal power dissipation in normal operation2 Storage & operating temperature CONDITIONS Tj = 25 C to 150C RGS = 20 k Tsp = 50 C1 spindle FETs; = 33.3% Isolation FET (dc) spindle FETs isolation FET Tsp = 50 C spindle FETs; = 33.3% isolation ...
Description N-channel enhancement mode TrenchMOS transistor array

File Size 170.78K  /  10 Page

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    2420 242079NT 2420310GS 2420310GST 2420310GT 2420310NS 2420310NST 2420310NT 242031GS 242031GST 242031GT 242031NS 242031N

BOURNS[Bourns Electronic Solutions]
Part No. 2420 242079NT 2420310GS 2420310GST 2420310GT 2420310NS 2420310NST 2420310NT 242031GS 242031GST 242031GT 242031NS 242031NST 242031NT 242033GS 242033GST 242033GT 242033NS 242033NST 242033NT 242039GS 242039GST 242039GT 242039NS 242039NST 242039NT 2420710GS 2420710GST 2420710GT 2420710NS 2420710NST 2420710NT 242071GS 242071GST 242071GT 242071NS 242071NST 242071NT 242073GS 242073GST 242073GT 242073NS 242073NST 242073NT 242079GS 242079GST 242079GT 242079NS 242079NST
OCR Text ...>60 operations >5 operations >1 operation2 1 operation >30 A rms, 15 min. -55 to +85 C Telcordia analyzed for controlled (non-sealed) and uncontrolled, high-exposure (sealed) environments per GR 974 and SBC SR 5165. Telcordia Technical A...
Description 5-Pin Gas Discharge Tube (GDT) Protector

File Size 200.63K  /  2 Page

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    EMP104-Q5

Excelics Semiconductor, Inc.
Part No. EMP104-Q5
OCR Text ... MAXIMUM RATINGS FOR CONTINUOUS operation2,3 SYMBOL VDS VGS IDD IGSF PIN TCH TSTG PT CHARACTERISTIC Drain to Source Voltage Gate to Source Voltage Drain Current Forward Gate Current Input Power Channel Temperature Storage Temperature Total...
Description 5.0 - 6.5 GHz Surface-Mounted PA

File Size 134.59K  /  4 Page

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    EMP207-Q5

Excelics Semiconductor, Inc.
Part No. EMP207-Q5
OCR Text ... MAXIMUM RATINGS FOR CONTINUOUS operation2,3 SYMBOL VDS VGS IDD IGSF PIN TCH TSTG PT CHARACTERISTIC Drain to Source Voltage Gate to Source Voltage Drain Current Forward Gate Current Input Power Channel Temperature Storage Temperature Total...
Description 17.0 - 20.0 GHz Surface-Mounted PA

File Size 115.54K  /  3 Page

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    EMP210-Q5

Excelics Semiconductor, Inc.
Part No. EMP210-Q5
OCR Text ... MAXIMUM RATINGS FOR CONTINUOUS operation2,3 SYMBOL VDS VGS IDD IGSF PIN TCH TSTG PT CHARACTERISTIC Drain to Source Voltage Gate to Source Voltage Drain Current Forward Gate Current Input Power Channel Temperature Storage Temperature Total...
Description 9.5 - 12.0 GHz Surface-Mounted PA

File Size 134.25K  /  4 Page

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    EMP211-Q5

Excelics Semiconductor, Inc.
Part No. EMP211-Q5
OCR Text ... MAXIMUM RATINGS FOR CONTINUOUS operation2,3 SYMBOL VDS VGS IDD IGSF PIN TCH TSTG PT CHARACTERISTIC Drain to Source Voltage Gate to Source Voltage Drain Current Forward Gate Current Input Power Channel Temperature Storage Temperature Total...
Description 9.5 - 12.0 GHz Surface-Mounted PA

File Size 115.47K  /  3 Page

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For operation2 Found Datasheets File :: 19    Search Time::1.625ms    
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