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Honeywell
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| Part No. |
HR2000
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| OCR Text |
ricmosTM GATE ARRAYS
FEATURES
* Fabricated on Honeywell's Radiation Hardened 0.65 mLeff ricmosTM IV Bulk Process * Array Sizes from 10K to 336K Available Gates (Raw) * TTL or CMOS Compatible I/O * Full Complement of Screening Flows
www.D... |
| Description |
ricmos Gate Arrays
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| File Size |
47.09K /
2 Page |
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it Online |
Download Datasheet
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Honeywell
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| Part No. |
HLX6256
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| OCR Text |
...cts radiation ? fabricated with ricmos ? iv silicon on insulator (soi) 0.55 m low power process ? total dose hardness through 1x10 6 rad(sio 2 ) ? neutron hardness through 1x10 14 cm -2 ? dynamic and static transient upset hardness throu... |
| Description |
32K x 8 STATIC RAM-Low Power SOI
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| File Size |
178.42K /
12 Page |
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it Online |
Download Datasheet |
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| Part No. |
HLX6228KVR HLX6228KVF HLX6228-QH
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| OCR Text |
...cts radiation ? fabricated with ricmos ? iv silicon on insulator (soi) 0.7 m low power process (l eff = 0.55 m) ? total dose hardness through 1x10 6 rad(sio 2 ) ? neutron hardness through 1x10 14 cm -2 ? dynamic and static transient... |
| Description |
128K X 8 STANDARD SRAM, 30 ns, UUC
128K X 8 STANDARD SRAM, 30 ns, UUC31
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| File Size |
164.38K /
12 Page |
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it Online |
Download Datasheet |
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| Part No. |
HLX6228-BH
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| OCR Text |
...cts radiation ? fabricated with ricmos ? iv silicon on insulator (soi) 0.7 m low power process (l eff = 0.55 m) ? total dose hardness through 1x10 6 rad(si) ? neutron hardness through 1x10 14 cm -2 ? dynamic and static transient upset... |
| Description |
128K X 8 STANDARD SRAM, 32 ns, UUC31
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| File Size |
148.82K /
12 Page |
View
it Online |
Download Datasheet |
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