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  bga619 silicon-germanium high Datasheet PDF File

For bga619 silicon-germanium high Found Datasheets File :: 150+       Page :: | <1> | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

    BGA619

Infineon Technologies AG
Part No. bga619
Description The bga619 silicon-germanium high IP3 Low Noise Amplifier in PCS Receiver Applications

File Size 429.10K  /  17 Page

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    BFU725F BFU725F_N1 BFU725F/N1 BFU725F-N1 BFU725FN1-115

NXP Semiconductors
Part No. BFU725F BFU725F_N1 BFU725F/N1 BFU725F-N1 BFU725FN1-115
Description NPN wideband silicon germanium RF transistor
NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package

File Size 66.67K  /  11 Page

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    Renesas Electronics Corporation.
Part No. RQG1001UP-TL-E
Description NPN Silicon Germanium Transistor high Frequency Low Noise Amplifier

File Size 304.85K  /  17 Page

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    Renesas Electronics Corporation.
Part No. RQG1003UQ-TL-E
Description NPN Silicon Germanium Transistor high Frequency Low Noise Amplifier

File Size 307.72K  /  17 Page

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    RENESAS[Renesas Electronics Corporation]
Part No. RQG1001UPAQF RQG1001UP-TL-E
Description NPN Silicon Germanium Transistor high Frequency Low Noise Amplifier

File Size 309.06K  /  17 Page

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    RENESAS[Renesas Electronics Corporation]
Part No. RQG1003UQAQF RQG1003UQ-TL-E
Description NPN Silicon Germanium Transistor high Frequency Low Noise Amplifier

File Size 311.95K  /  17 Page

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    Renesas Electronics Corporation.
RENESAS[Renesas Electronics Corporation]
Part No. RQG2001URAQF RQG2001UR-TL-E
Description NPN Silicon Germanium Transistor high Frequency Medium Power Amplifier

File Size 242.16K  /  27 Page

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    BKC International Electronics
ETC[ETC]
Part No. 1N476 1N499 1N500 1N279 1N292 1N294 1N567 1N450 1N541 1N636 1N277 1N278 1N281 1N287 1N288 1N289 1N290 1N291 1N294A 1N297 1N297A 1N298 1N298A 1N314 1N355 1N367 1N417 1N418 1N419 1N447 1N448 1N449 1N451 1N452 1N453 1N454 1N455 1N477 1N478 1N479 1N480 1N490 1N497 1N498 1N501 1N502 1N527 1N542 1N568 1N571 1N616 1N618 1N631 1N632 1N633 1N634 1N635 1N617
Description 165 V, 500 mA, gold bonded germanium diode
100 V, 500 mA, gold bonded germanium diode
12 V, 500 mA, gold bonded germanium diode
90 V, 500 mA, gold bonded germanium diode
GOLD BONDED DIODES(LOW FORWARD VOLTAGE, LOW POWER CONSUMPTION)
75 V, 500 mA, gold bonded germanium diode
120 V, 500 mA, gold bonded germanium diode
70 V, 500 mA, gold bonded germanium diode
80 V, 500 mA, gold bonded germanium diode
115 V, 500 mA, gold bonded germanium diode
60 V, 500 mA, gold bonded germanium diode

File Size 2,015.49K  /  59 Page

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    SRM-2016

Stanford Microdevices
Part No. SRM-2016
Description 1700 - 2000 MHz high Linearity Silicon Germanium Active Receive Mixer

File Size 191.82K  /  7 Page

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    BFP650H6327

Infineon Technologies AG
Infineon Technologies A...
Part No. BFP650H6327
Description high Linearity Silicon Germanium Bipolar RF Transistor
   high Linearity Silicon Germanium Bipolar RF Transistor

File Size 1,138.29K  /  29 Page

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For bga619 silicon-germanium high Found Datasheets File :: 150+       Page :: | <1> | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

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