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  transistor igbt power module i Datasheet PDF File

For transistor igbt power module i Found Datasheets File :: 150+       Page :: | <1> | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

    iXYS, Corp.
Part No. iXGE75N100Z iXGE50N90Z iXTE9N65X4U iXGE50N50Z
Description transistor | igbt power module | iNDEPENDENT | 1KV V(BR)CES | 75A i(C)
transistor | igbt power module | iNDEPENDENT | 900V V(BR)CES | 50A i(C)
transistor | MOSFET power module | iNDEPENDENT | 650V V(BR)DSS | 9A i(D) 晶体管| MOSFET功率模块|独立|650V五(巴西)直| 9A条(丁)
transistor | igbt power module | iNDEPENDENT | 500V V(BR)CES | 50A i(C) 晶体管| igbt功率模块|独立| 500V五(巴西)国际消费电子展| 50A条一(c

File Size 540.18K  /  6 Page

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    FZ800R33KF1 FS150R12KF4 FD400R12KF4

infineon Technologies AG
Part No. FZ800R33KF1 FS150R12KF4 FD400R12KF4
Description transistor | igbt power module | iNDEPENDENT | 3.3KV V(BR)CES | 800A i(C)
transistor | igbt power module | 3-PH BRiDGE | 1.2KV V(BR)CES | 150A i(C)
transistor | igbt power module | iNDEPENDENT | 1.2KV V(BR)CES | 400A i(C) 晶体管| igbt功率模块|独立| 1.2KV五(巴西)国际消费电子展|四楼一(c

File Size 232.37K  /  4 Page

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    FF75R10KN FF150R10KN FF100R10KN FS50R10KF2 FS8R06KF2 FF15R10KN FS75R06KF

Delta Electronics, inc.
Fuji Electric Holdings Co., Ltd.
infineon Technologies AG
Part No. FF75R10KN FF150R10KN FF100R10KN FS50R10KF2 FS8R06KF2 FF15R10KN FS75R06KF
Description transistor | igbt | N-CHAN | DUAL | 1KV V(BR)CES | 75A i(C) | M:HL093HD5.6
transistor | igbt | N-CHAN | DUAL | 1KV V(BR)CES | 150A i(C) | M:HL093HW048
transistor | igbt | N-CHAN | DUAL | 1KV V(BR)CES | 100A i(C) | M:HL093HW048
transistor | igbt power module | 3-PH BRiDGE | 1KV V(BR)CES | 50A i(C)
transistor | igbt power module | 3-PH BRiDGE | 600V V(BR)CES | 8A i(C) 晶体管| igbt功率模块| 3 - PH值大桥| 600V的五(巴西)国际消费电子展| 8A条一(c
transistor | igbt | N-CHAN | DUAL | 1KV V(BR)CES | 15A i(C) | M:HL080HD5.3 晶体管| igbt的|正陈|双| 1KV交五(巴西)国际消费电子展|5A一(c)|米:HL080HD5.3
transistor | igbt power module | 3-PH BRiDGE | 600V V(BR)CES | 75A i(C) 晶体管| igbt功率模块| 3 - PH值大桥| 600V的五(巴西)国际消费电子展| 75A条一(c

File Size 48.99K  /  1 Page

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    BSM150GAL100D BSM150GB100D

infineon Technologies AG
Part No. BSM150GAL100D BSM150GB100D
Description transistor | igbt power module | iNDEPENDENT | 1KV V(BR)CES | 150A i(C) 晶体管| igbt功率模块|独立| 1KV交五(巴西)国际消费电子展| 150A一(c
transistor | igbt power module | HALF BRiDGE | 1KV V(BR)CES | 150A i(C)

File Size 349.95K  /  8 Page

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Part No. BSM25GAL100D BSM25GB100D
Description transistor | igbt power module | iNDEPENDENT | 1KV V(BR)CES | 25A i(C)
transistor | igbt power module | HALF BRiDGE | 1KV V(BR)CES | 25A i(C)

File Size 331.12K  /  8 Page

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    Unisonic Technologies Co., Ltd.
Part No. OMD60L60FL OMD150N06FL
Description transistor | igbt power module | FULL BRiDGE | 600V V(BR)CES | 75A i(C) 晶体管| igbt功率模块|全桥| 600V的五(巴西)国际消费电子展| 75A条一c
transistor | MOSFET power module | FULL BRiDGE | 60V V(BR)DSS | 150A i(D)

File Size 242.48K  /  4 Page

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    SiEMENS[Siemens Semiconductor Group]
SiEMENS AG
Part No. C67076-A2510-A67 BSM15GD60DN2 SiEMENSAG-BSM15GD60DN2
Description igbt power module (power module 3-phase full-bridge including fast free-wheel diodes) 15 A, 600 V, N-CHANNEL igbt

File Size 122.21K  /  9 Page

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    PM30RHC060

powerex power Semiconductors
Part No. PM30RHC060
Description transistor | igbt power module | 3-PH BRiDGE | 600V V(BR)CES | 30A i(C)
intellimod-3 modules: Three Phase Brake, igbt inverter Output 30 Amp, 110-230 Volt Line

File Size 629.06K  /  10 Page

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    X9315 X9315WSZ-2.7 X9315TM X9315TM-2.7 X9315TMI X9315TMI-2.7 X9315TMIZ X9315TMIZ-2.7 X9315TMZ X9315TMZ-2.7 X9315TP X9315

http://
iNTERSiL[intersil Corporation]
intersil, Corp.
Part No. X9315 X9315WSZ-2.7 X9315TM X9315TM-2.7 X9315TMi X9315TMi-2.7 X9315TMiZ X9315TMiZ-2.7 X9315TMZ X9315TMZ-2.7 X9315TP X9315TP-2.7 X9315TPi X9315TPi-2.7 X9315TS X9315TS-2.7 X9315TSi X9315TSi-2.7 X9315TSiZ X9315TSiZ-2.7 X9315TSZ X9315TSZ-2.7 X9315UM X9315UM-2.7 X9315UMi X9315UMi-2.7 X9315UMiZ X9315UMiZ-2.7 X9315UMZ X9315UMZ-2.7 X9315UP X9315UP-2.7 X9315UPi X9315UPi-2.7 X9315US X9315US-2.7 X9315USi X9315USi-2.7 X9315USiZ X9315USiZ-2.7 X9315USZ X9315USZ-2.7 X9315WM X9315WM-2.7 X9315WMi X9315WMi-2.7 X9315WMiZ X9315WMZ X9315WMZ-2.7 X9315WP X9315WP-2.7 X9315WPi X9315WPi-2.7 X9315WS X9315WS-2.7 X9315WSi X9315WSi-2.7 X9315WSiZ X9315WSiZ-2.7 X9315WSZ X9315WMiZ-2.7
Description :SEMiTOP 3; Centres, fixing:52.5mm; Current, ic av:40A; Current, ic continuous b max:32A; RoHS Compliant: Yes
max:2.1V; Case style:SEMiTOP 4; Current, icm pulsed:100A; Temperature, Tj RoHS Compliant: Yes
THYRiSTOR module, 3 PHASETHYRiSTOR module, 3 PHASE; Voltage, Vrrm:1600V; Case style:SEMiTOP 3; Current, it rms:68A; Current, itsm:450A; Voltage, Vgt
:SEMiTOP-4; Voltage, Vceo:1200V; Voltage, Vce sat max:2.15V; Current, ic continuous a
continuous a max:17A; Voltage, Vce sat max:2.5V; Case style:SEMiTOP 3; Current, icm RoHS Compliant: Yes
igbt module, H BRiDGE 1200Vigbt module, H BRiDGE 1200V; transistor type:igbt; Case style:SEMiTOP 2; Voltage, Vceo:1200V; Voltage, Vce sat max:3.2V
igbt module, DUAL 600V; transistor type:igbt; Case style:SEMiTOP 2; Voltage, Vceo:600V; Voltage, Vce sat max:2V; Current, ic continuous a max:54A
igbt module, CHOPPER 1200Vigbt module, CHOPPER 1200V; transistor type:igbt; Case style:SEMiTOP 2; Voltage, Vceo:1200V; Voltage, Vce sat max:3V
igbt module 6 PACK 114A 1200V TRENCHigbt module 6 PACK 114A 1200V TRENCH; transistor type:3-phase bridge inverter; Case style:SEMiTOP-4; Voltage
:SEMiTOP 2; Centres, fixing:38mm; Current, ic av:23A; Current, ic continuous b max:15A; RoHS Compliant: Yes
igbt module, 6 PACK 1200Vigbt module, 6 PACK 1200V; transistor type:igbt; Case style:SEMiTOP 3; Voltage, Vceo:1200V; Voltage, Vce sat max:2.1V
igbt module, DUAL 1200Vigbt module, DUAL 1200V; transistor type:igbt; Case style:SEMiTOP 2; Voltage, Vceo:1200V; Voltage, Vce sat max:3V; Current, ic
MOSFET module, 6 PACK 75VMOSFET module, 6 PACK 75V; transistor type:MOSFET; transistor polarity:N; Voltage, Vds max:100V; Case style:SEMiTOP 2
RECTiFiER SCHOTTKY SiNGLE 1A 70V 25A-ifsm 0.8V-vf 0.5mA-ir DO-41 5K/AMMO
DiODE SCHOTTKY SiNGLE 10V 150mW 0.37V-vf 30mA-iFM 1mA-iF 1uA-iR SOT-523 3K/REEL
igbt module, DUAL 600V; transistor type:igbt; Case style:SEMiTOP 1; Voltage, Vceo:600V; Voltage, Vce sat max:2V; Current, ic continuous a max:30A; Current, icm pulsed:24A; power, Pd:1400W; Time, rise:35ns; Centres, fixing:28.5mm;
Low Noise, Low power, 32 Taps 10K DiGiTAL POTENTiOMETER, iNCREMENT/DECREMENT CONTROL iNTERFACE, 32 POSiTiONS, PDiP8
igbt module 6 PACK 96A 600V TRENCHigbt module 6 PACK 96A 600V TRENCH; transistor type:3-phase bridge inverter; Case style:SEMiTOP-4; Current, ic continuous a max:100A
igbt module, 6 PACK 1200Vigbt module, 6 PACK 1200V; transistor type:igbt; Case style:SEMiTOP 2; Voltage, Vceo:1200V; Voltage, Vce sat max:2.1V; Current, ic continuous a max:22A; Current, icm pulsed:44A; power, Pd:1600W; Time,

File Size 333.42K  /  14 Page

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    BSM75GD120DN2 075D12N2 C67070-A2516-A67

SiEMENS AG
SiEMENS[Siemens Semiconductor Group]
Part No. BSM75GD120DN2 075D12N2 C67070-A2516-A67
Description igbt power module (Solderable power module 3-phase full-bridge including fast free-wheel diodes) 103 A, 1200 V, N-CHANNEL igbt
From old datasheet system

File Size 185.11K  /  9 Page

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For transistor igbt power module i Found Datasheets File :: 150+       Page :: | <1> | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

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