vgdo -20v ig 10ma 100mw capaci pdf Datasheet P1 Description --- IC-ON-LINE


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vgdo -20v ig 10ma 100mw capaci Datasheet PDF File

For vgdo -20v ig 10ma 100mw capaci Found Datasheets File :: 150+ Page :: | <1> | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |

				Sanyo Semiconductor Corp ETC Sanyo Semicon Device
Part No.	2SK596 2SK596A 2SK596B 2SK596C
Description	V(gdo): -20v; I(g): 10ma; 100mw; capacitor microphone application From old datasheet system TRANSISTOR,JFET,N-CHANNEL,100UA I(DSS),SPAK capaciTOR MICROPHONE APPLICATIONS
File Size	435.55K / 6 Page	View it Online	Download Datasheet

				Isahaya Electronics Corporation
Part No.	2SJ498
Description	450mW Lead Frame J-FET (Field-Effect Transistor), maximum rating: 50V vgdo, -10ma ig, -0.6 to -12 mA Idss.
File Size	106.15K / 4 Page	View it Online	Download Datasheet

				Isahaya Electronics Cor... Isahaya Electronics Corporation
Part No.	2SK492
Description	FOR LOW FREQUENCY AMPLIFY APPLICATION N CHANNEL JUNCTION TYPE 150mW SMD J-FET (Field-Effect Transistor), maximum rating: -50V vgdo, 10ma ig, 1 to 12 mA Idss.
File Size	205.40K / 4 Page	View it Online	Download Datasheet

				Isahaya Electronics Corporation
Part No.	2SJ125
Description	150mW SMD J-FET (Field-Effect Transistor), maximum rating: 50V vgdo, -10ma ig, -1 to -12 mA Idss. FOR LOW FREQUENCY AMPLIFY APPLICATION P CHANNEL JUNCTION TYPE
File Size	212.69K / 4 Page	View it Online	Download Datasheet

				Isahaya Electronics Corporation http://
Part No.	2SK433
Description	150mW SMD J-FET (Field-Effect Transistor), maximum rating: -50V vgdo, 10ma ig, 0.6to 12 mA Idss. FOR LOW FREQUENCY AMPLIFY APPLICATION N CHANNEL JUNCTION TYPE
File Size	212.33K / 3 Page	View it Online	Download Datasheet

				Isahaya Electronics Corporation
Part No.	2SK2880
Description	450mW Lead Frame J-FET (Field-Effect Transistor), maximum rating: -50V vgdo, 10ma ig, 0.3 to 12 mA Idss. FOR LOW FREQUENCY AMPLIFY APPLICATION N CHANNEL JUNCTION TYPE MICRO(FRAME TYPE)
File Size	113.49K / 4 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG SEMICONDUCTOR CO. LTD.
Part No.	KT8592 KT8592N
Description	V(dd): -0.5 to 20V; V(in): -0.5 to 0.5V; -10ma; 500mW; 4 x 4 crosspoint switch with control memory From old datasheet system
File Size	337.88K / 9 Page	View it Online	Download Datasheet

				Cornell Dubilier Electr...
Part No.	3410GH142M400HPA1 3410DH102M350HPA1 3410EG212M250HPA1 3410EF681M350HPA1
Description	Round Snap-In Aluminum Electrolytic capaci-
File Size	70.58K / 5 Page	View it Online	Download Datasheet

				KEMET[Kemet Corporation]
Part No.	T499 T499_1
Description	High Temperature ( 175) Tantalum SMT capaci
File Size	543.21K / 3 Page	View it Online	Download Datasheet

				APEM SA
Part No.	OC70 OC75 OC66 2N217 OC74 OC65 OC73 OC76 OC77 OC78 OC71 ACY35 ACY39 ASY80 ASY81 ASY76 ASY77 2N166 2N1731 ACY40
Description	TRANSISTOR \| BJT \| PNP \| 30V V(BR)CEO \| 50MA I(C) \| TO-1 TRANSISTOR \| BJT \| PNP \| 30V V(BR)CEO \| 100MA I(C) \| TO-1 TRANSISTOR \| BJT \| PNP \| 10ma I(C) \| TO-1 TRANSISTOR \| BJT \| PNP \| 25V V(BR)CEO \| 150MA I(C) \| TO-1 TRANSISTOR \| BJT \| PNP \| 20V V(BR)CEO \| 300MA I(C) \| TO-1 TRANSISTOR \| BJT \| PNP \| 16V V(BR)CEO \| 300MA I(C) \| TO-1 TRANSISTOR \| BJT \| PNP \| 60V V(BR)CEO \| 250MA I(C) \| TO-1 TRANSISTOR \| BJT \| PNP \| 20V V(BR)CEO \| 200MA I(C) \| TO-1 TRANSISTOR \| BJT \| PNP \| 20V V(BR)CEO \| 50MA I(C) \| TO-1 TRANSISTOR \| BJT \| PNP \| 10V V(BR)CEO \| 50MA I(C) \| TO-1 TRANSISTOR \| BJT \| PNP \| 40V V(BR)CEO \| 500MA I(C) \| TO-5 TRANSISTOR \| BJT \| PNP \| 32V V(BR)CEO \| 1A I(C) \| TO-5 TRANSISTOR \| BJT \| PNP \| 35V V(BR)CEO \| 500MA I(C) \| TO-5 TRANSISTOR \| BJT \| PNP \| 20V V(BR)CEO \| 1A I(C) \| TO-5 68HC11/Bidirectional-Compatible µP Reset Circuit TRANSISTOR \| BJT \| PNP \| 18V V(BR)CEO \| 500MA I(C) \| TO-5 晶体管\|晶体管\|进步党\| 18V的五（巴西）总裁\| 500mA的一（c）\|
File Size	327.81K / 4 Page	View it Online	Download Datasheet

For vgdo -20v ig 10ma 100mw capaci Found Datasheets File :: 150+ Page :: | <1> | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |