| PART |
Description |
Maker |
| 2SC3981 2SC3981A |
TRANS NPN 40V 350MW SMD SOT23 5 A, 800 V, NPN, Si, POWER TRANSISTOR
Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)
|
Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
|
| FOD0708 |
Optocouplers consist of an AlGaAs LED optically coupled to a high speed trans-impedance amplifier and voltage comparator
|
FAIRCHILD
|
| W24L011AQ-10 W24L011AQ-12 W24L011AQ-15 W24L011AT-1 |
128K X 8 High Speed CMOS Static RAM 128K X 8 STANDARD SRAM, 15 ns, PDSO32
128K X 8 High Speed CMOS Static RAM 128K X 8 STANDARD SRAM, 12 ns, PDSO32
TRANS PNP W/RES 60HFE NEW S TYPE 128K X 8 STANDARD SRAM, 15 ns, PDSO32
Circular Connector; No. of Contacts:4; Series:MS27474; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:12; Circular Contact Gender:Pin; Circular Shell Style:Jam Nut Receptacle; Insert Arrangement:12-4 RoHS Compliant: No
JT 55C 55#22M SKT PLUG
HIGH SPEED SRAM
|
Winbond Electronics, Corp.
Winbond Electronics Corp
WINBOND[Winbond]
|
| TIP29D TIP29E TIP29F |
TRANS 10V 5W SA10C BIPOLAR GCI
NPN SILICON POWER TRANSISTORS
|
Power Innovations International, Inc.
Power Innovations Limited
POINN[Power Innovations Ltd]
|
| 2SJ479 2SJ479L 2SJ479S |
Power switching MOSFET
Silicon P Channel DV-L MOS FET High Speed Power Switching
Silicon P Channel DVL MOS FET High Speed Power Switching
|
HITACHI[Hitachi Semiconductor]
|
| BUL54BFI |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
|
SemeLAB
SEME-LAB[Seme LAB]
|
| BUL76B BUL74A BUL76A |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
|
SemeLAB
SEME-LAB[Seme LAB]
|
| 2N2905A |
HIGH SPEED MEDIUM POWER PNP SWITCHING TRANSISTOR 600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-39
High Speed, Saturated Switch PNP Silicon Transistor(高速、饱和开关型PNP硅晶体管) 高速，饱和硅晶体管开关进步党（高速，饱和开关型进步党硅晶体管）
|
TT electronics Semelab, Ltd.
STMicroelectronics N.V.
SEME-LAB[Seme LAB]
|
| FJP5304D FJP5304DTU |
NPN Triple Diffused Planar Silicon Transistor
High Voltage High Speed Power Switch Application
|
FAIRCHILD[Fairchild Semiconductor]
|
| 2SK1611 |
V(dss): 800V; silicon N-channel powe F-MOS FET. For high-speed switching, for high frequency power amplification
Silicon N-Channel Power F-MOS FET
|
Panasonic Semiconductor
http://
|
