| PART |
Description |
Maker |
| 2SA1871 2SA1871-GA1-AZ |
PNP SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH-SPEED HIGH-VOLTAGE SWITCHING 进步党三重扩散硅晶体管高速高压开
1 A, 600 V, PNP, Si, POWER TRANSISTOR
High-speed high-voltage switching PNP 3-diffusion trans
|
NEC, Corp.
NXP Semiconductors N.V.
NEC[NEC]
|
| BUL62B |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
|
SemeLAB
SEME-LAB[Seme LAB]
|
| BUL55A BUL53A |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
|
SEME-LAB[Seme LAB]
TT electronics Semelab Limited
|
| BUL49A |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
|
SEME-LAB[Seme LAB]
TT electronics Semelab Limited
|
| BUL53A |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
|
TT electronics Semelab Limited
|
| BUL74B |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
|
SemeLAB
SEME-LAB[Seme LAB]
|
| BUL57A |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
|
TT electronics Semelab Limited
SEME-LAB[Seme LAB]
|
| KSC5504DT KSC5504D KSC5504DTTU |
NPN Triple Diffused Planar Silicon Transistor
High Voltage High Speed Power Switch Application
|
FAIRCHILD[Fairchild Semiconductor]
|
| 2SK1611 |
V(dss): 800V; silicon N-channel powe F-MOS FET. For high-speed switching, for high frequency power amplification
Silicon N-Channel Power F-MOS FET
|
Panasonic Semiconductor
http://
|
