PART |
Description |
Maker |
IXFR180N06 |
HiPerFETTM Power MOSFETs 180 A, 60 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET Discrete MOSFETs: HiPerFET Power MOSFETS
|
IXYS, Corp. IXYS[IXYS Corporation]
|
IXFH32N50Q IXFT32N50Q |
32 A, 500 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD HiPerFET?/a> Power MOSFETs Q-Class HiPerFET⑩ Power MOSFETs Q-Class Discrete MOSFETs: HiPerFET Power MOSFETS
|
IXYS Corporation
|
RFP40N10 RF1S40N10SM RFG40N10 FN2431 |
CAP 180PF 200V 1% NP0(C0G) DIP-2 TUBE-PAK R-MIL-PRF-39014/22 40 A, 100 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 40A/ 100V/ 0.040 Ohm/ N-Channel Power MOSFETs 40A, 100V, 0.040 Ohm, N-Channel Power MOSFETs 40A 100V 0.040 Ohm N-Channel Power MOSFETs From old datasheet system
|
Intersil, Corp. INTERSIL[Intersil Corporation]
|
IRFR120 IRFU120 FN2414 |
8.4A, 100V, 0.270 Ohm, N-Channel Power MOSFETs 8.4 A, 100 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA (IRFR120 / IRFU120) N-Channel Power MOSFETs From old datasheet system
|
Intersil, Corp. INTERSIL[Intersil Corporation]
|
IRFU110 IRFR110 FN3275 |
From old datasheet system 4.7A, 100V, 0.540 Ohm, N-Channel Power MOSFETs (IRFR110 / IRFU110) N-Channel Power MOSFETs
|
HARRIS SEMICONDUCTOR Intersil Corporation
|
IRF713 IRF710 MTP2N35 MTP2N40 IRF711 IRF712 |
IRF710-713 MTP2N35/2N40 N-Channel Power MOSFETs N-Channel Power MOSFETs, 2.25 A, 350-400 V
|
New Jersey Semi-Conductor Products, Inc. New Jersey Semi-Conductor P...
|
IXFX120N20 IXFK120N20 |
HiPerFET Power MOSFETs CAP 0.01UF 50V 10% NP0(C0G) DIP-2 TUBE-PAK R-MIL-PRF-39014/22 120 A, 200 V, 0.017 ohm, N-CHANNEL, Si, POWER, MOSFET Discrete MOSFETs: HiPerFET Power MOSFETS
|
IXYS, Corp. IXYS[IXYS Corporation]
|
IXFN38N100Q2 |
N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr 38 A, 1000 V, N-CHANNEL, Si, POWER, MOSFET Discrete MOSFETs: HiPerFET Power MOSFETS
|
IXYS, Corp. IXYS[IXYS Corporation]
|
APT1001RBLC APT1001RSLC APT1001 |
POWER MOS VI 1000V 11A 1.000 Ohm Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology] Advanced Power Technology Ltd.
|
IXTQ23N60Q |
Discrete MOSFETs: Standard N-channel Types Power MOSFETs Q-Class
|
IXYS Corporation
|
|