| PART |
Description |
Maker |
| IRF7322D1 |
MOSFET Schottky Diode ( VDSS = -20V , RDS(on) = 0.058W , Schottky Vf = 0.39V )
FETKY? MOSFET / Schottky Diode
|
International Rectifier
|
| IRF7526D1 IRF7526D1TR |
Co-packaged HEXFETò Power MOSFET and Schottky Diode
FETKYMOSFET & Schottky Diode(Vdss=-30V, Rds(on)=0.20ohm, Schottky Vf=0.39V) FETKY⑩MOSFET
FETKY MOSFET & Schottky Diode(Vdss=-30V Rds(on)=0.20ohm Schottky Vf=0.39V)
FETKY MOSFET & Schottky Diode(Vdss=-30V, Rds(on)=0.20ohm, Schottky Vf=0.39V)
FETKY⑩ MOSFET & Schottky Diode(Vdss=-30V, Rds(on)=0.20ohm, Schottky Vf=0.39V)
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| IRF7524D1 |
Co-packaged HEXFET Power MOSFET and Schottky Diode(同封HEXFET晶体管和肖特基二极管)
FETKY⑩ MOSFET & Schottky Diode(Vdss=-20V, Rds(on)=0.27ohm, Schottky Vf=0.39V)
HEXFET? Power MOSFET
FETKY MOSFET & Schottky Diode(Vdss=-20V, Rds(on)=0.27ohm, Schottky Vf=0.39V)
|
IRF[International Rectifier]
|
| NTHD4P02F NTHD4P02FT1 NTHD4P02FT1G |
Power MOSFET and Schottky Diode 20 V, 2.1A, Single P-Channel w/ 1.0 A Schottky Barrier Diode, ChipFET
Power MOSFET and Schottky Diode 2.2 A, 20 V, 0.155 ohm, P-CHANNEL, Si, POWER, MOSFET
|
ONSEMI[ON Semiconductor]
|
| IRF7807VD2 IRF7807VD2TR |
30V FETKY - MOSFET and Schottky Diode in a SO-8 package
FETKY MOSFET / SCHOTTKY DIODE
FETKY⑩ MOSFET / SCHOTTKY DIODE
|
IRF[International Rectifier]
|
| FDFS2P102 FAIRCHILDSEMICONDUCTORCORP-FDFS2P102 FDF |
Integrated P-Channel MOSFET and Schottky Diode
FETKEY P-Channel MOSFET with Schottky Diode 3.3 A, 20 V, 0.125 ohm, P-CHANNEL, Si, POWER, MOSFET
|
FAIRCHILD SEMICONDUCTOR CORP
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
| IRF7342D2 IRF7342D2TR |
-55V FETKY - MOSFET and Schottky Diode in a SO-8 package - 55VFETKY - MOSFET和肖特基二极管的SO - 8封装
FETKY MOSFET & Schottky Diode
|
International Rectifier, Corp.
|
| NTGD4169F NTGD4169FT1G |
30V 2.9A N-Ch with Schottky Barrier Diode TSOP6
Power MOSFET and Schottky Diode 30 V, 2.9 A, N−Channel with Schottky Barrier Diode, TSOP−6
|
ON Semiconductor
|
| FDFS2P753AZ08 |
Integrated P-Channel PowerTrench? MOSFET and Schottky Diode -30V, -3A, 115mΩ
Integrated P-Channel PowerTrench㈢ MOSFET and Schottky Diode -30V, -3A, 115mヘ
|
Fairchild Semiconductor
|
| NTLJF3117PTAG |
Power MOSFET and Schottky Diode −20 V, −4.1 A, P−Channel, with 2.0 A Schottky Barrier Diode, 2x2 mm, uCool Package 2.3 A, 20 V, 0.135 ohm, P-CHANNEL, Si, POWER, MOSFET
|
ON Semiconductor
|
|
