PART |
Description |
Maker |
IRC540 |
Power MOSFET(Vdss=100V, Rds(on)=0.077ohm, Id=28A) 功率MOSFET(减振钢板基本\u003d 100V的,的Rds(on)\u003d 0.077ohm,身份证\u003d 28A条) Power MOSFET(Vdss=100V/ Rds(on)=0.077ohm/ Id=28A) Hexfet? Power MOSFET 100V Single N-Channel HEXFET Power MOSFET in a TO-220 5-Pin (HEXSense) package
|
International Rectifier, Corp. IRF[International Rectifier]
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IRF3710 IRF3710PBF |
Power MOSFET(Vdss=100V, Rds(on)=23mohm, Id=57A) 功率MOSFET(减振钢板基本\u003d 100V的,的Rds(on)\u003d 23mohm,身份证\u003d 57A条) Power MOSFET(Vdss=100V Rds(on)=23mohm Id=57A) 100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
|
International Rectifier, Corp. IRF[International Rectifier]
|
IRFD9110 |
-100V Single P-Channel HEXFET Power MOSFET in a HEXDIP package Power MOSFET(Vdss=-100V, Rds(on)=1.2ohm, Id=-0.70A) Power MOSFET(Vdss=-100V Rds(on)=1.2ohm Id=-0.70A)
|
IRF[International Rectifier]
|
IRFD9120 |
-100V Single P-Channel HEXFET Power MOSFET in a HEXDIP package Power MOSFET(Vdss=-100V, Rds(on)=0.60ohm, Id=-1.0A) Power MOSFET(Vdss=-100V Rds(on)=0.60ohm Id=-1.0A) HEXFET? Power MOSFET Power MOSFET(Vdss=-100V/ Rds(on)=0.60ohm/ Id=-1.0A)
|
IRF[International Rectifier]
|
IRLU120N IRLU120NPBF IRLR120N IRLR120NPBF IRLR120N |
Power MOSFET(Vdss=100V, Rds(on)=0.185ohm, Id=10A) 功率MOSFET(减振钢板基本\u003d 100V的,的Rds(on)\u003d 0.185ohm,身份证\u003d 10A条) 100V Single N-Channel HEXFET Power MOSFET in a D-Pak package 100V Single N-Channel HEXFET Power MOSFET in a I-Pak package
|
International Rectifier, Corp.
|
STP50NE10 6035 |
N-channel 100V - 0.021 - 50A TO-220 STripFET Power MOSFET N - CHANNEL 100V - 0.021ohm - 50A TO-220 STripFET POWER MOSFET From old datasheet system N-channel 100V - 0.021з - 50A TO-220 STripFET⑩ Power MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
|
IRHG6110 IRHG63110 IRHG6110P IRHG6110N IRHG6110PBF |
Simple Drive Requirements 100V Dual 2N- and 2P- Channel MOSFET in a MO-036AB package -100V 100kRad Hi-Rel Dual 2N and 2P -Channel TID Hardened MOSFET in a MO-036AB package RADIATION HARDENED POWER MOSFET 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET MOSFET TECHNOLOGY 1 A, 100 V, 0.7 ohm, 4 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET, MO-036AB
|
IRF[International Rectifier]
|
TSD4M150 TSD4M150F TSD4M150V |
V(ds): 100V; V(dgr): 100V; V(gs): -20V; 500W; I(d): 135A; N-channel enhancement mode ISOFET power MOS transistor module. For DC-DC & DC-AC converters, SMPS & UPS, motor control, output storage for PWM, ultrasonic circuits
|
SGS Thomson Microelectronics STMicroelectronics ST Microelectronics
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FSL913A0D FSL913A0D1 FSL913A0D3 FSL913A0R FSL913A0 |
7A, -100V, 0.300 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs 7 A, 100 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF 7A, -100V, 0.300 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs 7A 100V的,0.300欧姆,拉德硬,SEGR性,P通道功率MOSFET 7A/ -100V/ 0.300 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs 5A/ -100V/ 0.680 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs
|
Intersil, Corp. INTERSIL[Intersil Corporation]
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BDX53 BDX54C BDX54 BDX53C BDX53A BDX53B BDX54A BDX |
POWER TRANSISTORS(8A.,45-100V,60W) 功率晶体管(8A. ,45 - 100V的,60瓦) POWER TRANSISTORS(8A./45-100V/60W) POWER TRANSISTORS(8A.45-100V60W)
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Mospec Semiconductor, Corp. MOSPEC[Mospec Semiconductor]
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