| PART |
Description |
Maker |
| UPA1916 UPA1916TE UPA1916TE-T2 UPA1916TE-T1 |
Pch enhancement-type MOS FET
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
|
NEC
|
| UPA1815GR-9JG-E1 UPA1815GR-9JG-E2 |
Pch enhancement type MOS FET
|
NEC
|
| UPA1915TE-T2 |
Pch enhancement type MOS FET
|
NEC
|
| UPA1817 UPA1817GR-9JG UPA1817GR-9JG-E2 |
Pch enhancement MOS FET
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
|
NEC Corp.
|
| UPA2730TP UPA2730TP-AZ UPA2730TP-E2 UPA2730TP-E1 |
Pch enhancement-type MOS FET
SWITCHING P-CHANNEL POWER MOSFET
SWITCHING N- AND P-CHANNEL POWER MOS FET
42000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET POWER, HSOP-8
|
NEC[NEC]
|
| UPA1818 UPA1818GR-9JG UPA1818GR-9JG-A UPA1818GR-9J |
Pch enhancement MOS FET
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING P沟道MOS场效应晶体管开
10000 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET POWER, TSSOP-8
|
NEC Corp.
NEC, Corp.
Lattice Semiconductor, Corp.
|
| 2SJ621 2SJ621-T2B 2SJ621-T1B |
RF Bipolar Transistor; Collector Emitter Voltage, Vceo:600mV; Transistor Polarity:Dual P Channel; Power Dissipation:0.36W; C-E Breakdown Voltage:15V; DC Current Gain Min (hfe):20; Collector Current:200mA
MOS FIELD EFFECT TRANSISTOR
Pch enhancement type MOS FET
|
NEC Corp.
NEC[NEC]
|
| UPA1855 UPA1855GR-9JG |
Nch enhancement type MOS FET
MOS FIELD EFFECT TRANSISTOR
|
NEC
|
| UPA1902TE UPA1902 UPA1902TE-T1 UPA1902TE-T2 |
Nch enhancement type MOS FET
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
|
NEC[NEC]
|
| UPA1724 UPA1724G PA1724 UPA1724G-E1 UPA1724G-E2 |
N-channel enhancement type power MOS FET
MOS Field Effect Transistor
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
10 A, 20 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET
|
NEC[NEC]
|
| 2SJ449 2SJ449JM |
Pch vertical DMOS FET MP-45F
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
|
NEC[NEC]
|
| UPA1763G-E1 UPA1763G-E2 |
N-channel enhancement type power MOS FET(Dual type)
|
NEC
|
