| PART |
Description |
Maker |
| IS24C02 IS24C08 IS24C04 IS24C01 24C16 IS24C16-3PI |
16,384-BIT SERIAL ELECTRICALLY ERASABLE PROM
From old datasheet system
301K 1% 100PPM TF
1K-bit/2K-bit/4K-bit/8K-bit/16K-bit 2-WIRE SERIAL CMOS EEPROM 256 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8
1K-bit/2K-bit/4K-bit/8K-bit/16K-bit 2-WIRE SERIAL CMOS EEPROM 256 X 8 I2C/2-WIRE SERIAL EEPROM, PDIP8
RES 2.7 OHM 5% 0.1 W METAL FILM SMT 0805 256 X 8 I2C/2-WIRE SERIAL EEPROM, PDIP8
1K-bit/2K-bit/4K-bit/8K-bit/16K-bit 2-WIRE SERIAL CMOS EEPROM 1K X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8
1K-bit/2K-bit/4K-bit/8K-bit/16K-bit 2-WIRE SERIAL CMOS EEPROM 512 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8
1K-bit/2K-bit/4K-bit/8K-bit/16K-bit 2-WIRE SERIAL CMOS EEPROM 128 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8
1K-bit/2K-bit/4K-bit/8K-bit/16K-bit 2-WIRE SERIAL CMOS EEPROM 2K X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8
RESISTOR,309,CR0805 512 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8
1K-bit/2K-bit/4K-bit/8K-bit/16K-bit 2-WIRE SERIAL CMOS EEPROM 1K-bit/2K-bit/4K-bit/8K-bit/16K-bit 2线串行EEPROM中的CMOS
|
Integrated Silicon Solu...
Integrated Silicon Solution Inc
ISSI[Integrated Silicon Solution, Inc]
Integrated Silicon Solution, Inc.
Integrated Silicon Solution...
|
| UPD43256 UPD43256-15 UPD43256-10L |
32,768 x 8-BIT STATIC MIX-MOS RAM 32,768 × 8位静态混合马鞍山内存
|
NEC, Corp.
NEC Corp.
|
| MH8S64AQFC-6 MH8S64AQFC-6L MH8S64AQFC-8L MH8S64AQF |
536,870,912-BIT (8,388,608 - WORD BY 64-BIT)SynchronousDRAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MH8S64AQFC-6L MH8S64AQFC-7 |
536,870,912-BIT (8,388,608 - WORD BY 64-BIT)SynchronousDRAM
|
Mitsubishi Electric Corporation
|
| MSM51257CLL |
32,768-Word ?8-Bit CMOS STATIC RAM(32k瀛??浣????AM)
32,768-Word x 8-Bit CMOS STATIC RAM
From old datasheet system
32,768-Word ×8-Bit CMOS STATIC RAM(32k字位静态RAM)
|
OKI SEMICONDUCTOR CO., LTD.
|
| MH8S64BALD-6 |
536,870,912-BIT ( 8,388,608-WORD BY 64-BIT ) Synchronous DYNAMIC RAM
|
Mitsubishi Electric Corporation
|
| GM76C88AL-15 GM76C88AL-12 GM76C88AL GM76C88ALK-15 |
x8 SRAM
65,536 Bit static random access memory organized as 8,192 words by 8 bits using CMOS
65536 Bit RAM
|
etc
LG Semicon Co.,Ltd.
|
| IS24C02A-2ZI IS24C04A-2PI |
1K-bit/2K-bit/4K-bit/8K-bit/16K-bit 2-WIRE SERIAL CMOS EEPROM 256 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8
1K-bit/2K-bit/4K-bit/8K-bit/16K-bit 2-WIRE SERIAL CMOS EEPROM 512 X 8 I2C/2-WIRE SERIAL EEPROM, PDIP8
|
Integrated Silicon Solution, Inc.
|
| IS24C02A-3ZLA3 |
1K-bit/2K-bit/4K-bit/8K-bit/16K-bit 2-WIRE SERIAL CMOS EEPROM 256 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8
|
天津新技术产业园区管理委员会
|
| TC511664BZ TC511664B |
65536 word x 16 bit DRAM
65,536 WORD x 16 BIT DYNAMIC RAM
|
Toshiba Semiconductor
|
| HM6208HSERIES 6208H HM6208H HM6208HJP-35 HM6208HJP |
65,536-word ′ 4-bit High Speed CMOS Static RAM
From old datasheet system
65,536-WORD ? 4-BIT HIGH SPEED CMOS STATIC RAM
|
Hitachi Semiconductor
|
| TMM24256BP-20 TMM24256BP-17 TMM24256BF-20 TMM24256 |
200ns; V(cc): -0.6 to 7V; V; 32,768 x 8-bit one time programmable read only memory
170ns; V(cc): -0.6 to 7V; V; 32,768 x 8-bit one time programmable read only memory
|
TOSHIBA
|
