| PART |
Description |
Maker |
| MT88E41 MT88E41AE MT88E41AS MT88E41AN |
CMOS Extended Voltage Calling Number Identification Circuit (ECNIC)
|
ZARLINK[Zarlink Semiconductor Inc]
|
| K4E16708112D K4E160811D K4E160811D-B K4E160811D-F |
2M x 8Bit CMOS Dynamic RAM with Extended Data Out Data Sheet
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle.
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle.
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle.
|
Samsung Electronic
|
| K4E160411D K4E160412D K4E170411D K4E170412D K4E167 |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle.
4M x 4Bit CMOS Dynamic RAM with Extended Data Out Data Sheet
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle.
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle.
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle.
|
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| MT8841 MT8841AE MT8841AN MT8841AS |
CMOS Calling Number Identification Circuit
|
Mitel Networks Corporat...
MITEL[Mitel Networks Corporation]
|
| MT8843 MT8843AE MT8843AS |
CMOS Calling Number Identification Circuit 2 Preliminary Information
|
Mitel Networks Corporat...
MITEL[Mitel Networks Corporation]
|
| K4E640812C K4E660812C K4E640812C-JCL-45 K4E660812C |
8M x 8bit CMOS dynamic RAM with extended data out, 50ns
8M x 8bit CMOS dynamic RAM with extended data out, 60ns
8M x 8bit CMOS dynamic RAM with extended data out, 45ns
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| MT88E39 MT88E39AS |
CMOS Calling Number Identification Circuit(CNIC1.1) 主叫号码识别的CMOS电路（CNIC1.1
From old datasheet system
|
Mitel Networks, Corp.
MITEL[Mitel Networks Corporation]
Mitel Semiconductor
|
| CMX602A CMX602AD4 |
Calling Line Identifieron Call Waiting
Calling Line Identifier plus Call Waiting Type II
|
CMLMICRO[CML Microcircuits]
CML SEMICONDUCTOR
|
| KM416V4104B KM416V4004B KM416V4004BSL-45 KM416V400 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns, low power
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns, low power
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns, low power
|
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| GLT4160M04-60J3 GLT4160M04-60TC |
60ns; 4K x 4 CMOS dynamic RAM with extended data output
|
G-LINK Technology
|
