| PART |
Description |
Maker |
| HN58C65FP-25 |
8192-word X 8-bit Electrically Erasable and Programmable CMOS ROM
|
http://
|
| HN58C65 HN58C65FP-25 HN58C65P-25 |
8192-word X 8-bit Electrically Erasable and Programmable CMOS ROM
|
HITACHI[Hitachi Semiconductor]
|
| UPD458 |
Fully Decoded 8192-Bit Electrically Erasable and Programmable ROM
|
NEC Electronics
|
| HM6264A HM6264FP-10 HM6264FP-12 HM6264FP-15 HM6264 |
8192-word x 8-bit High Speed CMOS Static RAM 8192字8位高速CMOS静态RAM
|
http://
HITACHI[Hitachi Semiconductor]
Hitachi,Ltd.
|
| M58657P |
1400-BIT(100-WORD BY 14-BIT) ELECTRICALLY ALTERABLE ROM
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| M5L27128K M5L27128K-2 |
131 072-BIT(16384-WORD BY 8-BIT) ERASABLE AND ELECTRICALLY REPROGRAMMABLE ROM
|
Mitsubishi Electric Semiconductor
|
| M6M80041 M6M80041FP M6M80041P |
4096-BIT (256-WORD BY-180 -BIT) ELECTRICALLY ERASABLE AND PROGRAMMABLE ROM
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| M6MGB331S8BKT M6MGT331S8BKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
|
Renesas Electronics Corporation.
|
| M58658P |
320-BI(20-Word by 16-BIT) Electrically alterable rom
|
Mitsubishi Electric Corporation
|
| MR27V852E MR27V852ERA MR27V852EJA |
524,288 Word X 16 - Bit or 1,048,576 - Word X 8 - Bit 8 - Word x 16-Bit or 16 - Word x 8-Bit Page Mode One Time PROM
|
OKI[OKI electronic componets]
|
| MR27V852DRA MR27V852DMA MR27V852DTP MR27V852D |
524,288-Word x 16-Bit or 1,048,576-Word x 8-Bit 8-Word x 16-Bit or 16-Word x 8-Bit Page Mode One Time PROM
|
OKI electronic components
OKI[OKI electronic componets]
OKI SEMICONDUCTOR CO., LTD.
|
| M6MGT331S4BKT M6MGB331S4BKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT/4,194,304-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY & 4,194,304-BIT (262,144-WORD BY 16-BIT/524,288-WORD B
|
Renesas Electronics Corporation
|
