| PART |
Description |
Maker |
| MCM6323AYJ10 MCM6323AYJ10R SCM6323AYJ10A SCM6323AY |
64K X 16 bit 3,3V asynchronous fast static RAM
ER 3C 3#12 PIN PLUG RoHS Compliant: No
64K x 16 Bit 3.3 V Asynchronous Fast Static RAM 64K X 16 STANDARD SRAM, 10 ns, PDSO44
64K x 16 Bit 3.3 V Asynchronous Fast Static RAM 64K X 16 STANDARD SRAM, 15 ns, PDSO44
64K x 16 Bit 3.3 V Asynchronous Fast Static RAM 64K X 16 STANDARD SRAM, 12 ns, PDSO44
|
MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
Motorola, Inc.
Motorola Mobility Holdings, Inc.
|
| UPD4265800LE-A80 UPD4264800LE-A80 UPD4265800LE-A70 |
18-Mbit QDR™-II SRAM 2-Word Burst Architecture
64K x 16 Static RAM
1K x 8 Dual-Port Static RAM
1-Mbit (64K x 16) Static RAM x8快速页面模式的DRAM
|
STMicroelectronics N.V.
|
| CY7C1021BNV33L-10ZXC CY7C1021BNV33L-15BAI CY7C1021 |
64K x 16 Static RAM 64K X 16 STANDARD SRAM, 15 ns, PDSO44
64K x 16 Static RAM 64K的16静态RAM
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| KM616V1002CI |
64K x 16 Bit High-Speed CMOS Static RAM(3.3V Operating)(64K x 16 位高速CMOS 静RAM(3.3V 工作))
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| MCM69F618CTQ12 MCM69F618CTQ12R MCM69F618CTQ10 MCM6 |
64K x 18 Bit Flow-Through BurstRAM Synchronous Fast Static RAM 64K X 18 CACHE SRAM, 12 ns, PQFP100
64K x 18 Bit Flow-Through BurstRAM Synchronous Fast Static RAM 64K X 18 CACHE SRAM, 9 ns, PQFP100
|
MOTOROLA[Motorola, Inc]
Motorola Mobility Holdings, Inc.
MOTOROLA INC
|
| CY7C09199V CY7C09199V-12AC CY7C09199V-6AC CY7C0919 |
3.3V 32K/64K/128K x 8/9 Synchronous Dual-Port Static RAM 64K X 9 DUAL-PORT SRAM, 25 ns, PQFP100
3.3V 32K/64K/128K x 8/9 Synchronous Dual-Port Static RAM 32K X 9 DUAL-PORT SRAM, 25 ns, PQFP100
3.3V 32K/64K/128K x 8/9 Synchronous Dual-Port Static RAM 32K X 8 DUAL-PORT SRAM, 18 ns, PQFP100
SM Series Subminiature Basic Switch, Single Pole Double Throw (SPDT), 250 Vac, 11 A, Pin Plunger Actuator, Solder Termination
Memory
|
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
CYPRESS[Cypress Semiconductor]
|
| SST4117A SST4118A |
1-Mb (128K x 8) Static RAM
1-Mbit (64K x 16) Static RAM 晶体管|场效应| N沟道| 80uA电流我（直）| SOT - 23封装
|
Electronic Theatre Controls, Inc.
|
| K6F1016U4B K6F1016U4B-F K6F1016U4B-FF55 K6F1016U4B |
64K X 16 STANDARD SRAM, 55 ns, PBGA48
64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
SAMSUNG[Samsung semiconductor]
|
| KM616FR1000 |
64K x16 Bit Super Low Power and Low Voltage Full CMOS Static RAM(64K x 16位超低功耗低电压CMOS 静态RAM) 64K的x16位超低功耗和低电压的CMOS全静态RAM4K的16位超低功耗低电压的CMOS静态RAM）的
|
Samsung Semiconductor Co., Ltd.
|
| MCM6209C MCM6209CJ15 MCM6209CJ15R2 MCM6209CJ20 MCM |
64K x 4 Bit Fast Static RAM
|
MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
|
| UPD4265400G5-A50 UPD4265400G5-A60 UPD4265400G5-A70 |
2M x 8 Static RAM
256K x 4 Static RAM x4快速页面模式的DRAM
512K x 32 Static RAM x4快速页面模式的DRAM
3.3V 16K/32K x 36 FLEx36™ Synchronous Dual-Port Static RAM x4快速页面模式的DRAM
x4 Fast Page Mode DRAM x4快速页面模式的DRAM
512K x 24 Static RAM x4快速页面模式的DRAM
2-Mbit (128K x 16) Static RAM x4快速页面模式的DRAM
128K x 8 Static RAM 128K的8静态RAM
x4FastPageModeDRAM
|
Elpida Memory, Inc.
EPCOS AG
STMicroelectronics N.V.
NEC, Corp.
|
| ST1335 ST1355-CW4 ST1335-BD10 ST1335-BD15 ST1335-B |
5-CONTACT MEMORY CARD IC 272 BIT EEPROM WITH ADVANCED SECURITY MECHANISMS
5V, 3.3V, ISR™ High-Performance CPLDs
NX2LP DEVELOPMENT KIT
KIT DEV MOBL-USB FX2LP18
MoBL® 4-Mbit (256K x 16) Static RAM
MoBL® 1-Mbit (64K x 16) Static RAM
MoBL® 1 Mbit (128K x 8) Static RAM
MoBL® 2-Mbit (128K x 16) Static RAM
(ST1335/13361355) 5-Contact Memory Card IC 272-bit EEPROM with Advanced Security Mechanisms
MoBL® 1-Mbit (64K x 16) Static RAM EEPROM
5V, 3.3V, ISR™ High-Performance CPLDs EEPROM
MoBL® 4-Mbit (256K x 16) Static RAM EEPROM
5-Contact Memory Card IC 272-bit EEPROM with Advanced Security Mechanisms 5，联系记忆卡IC 272位具有高级安全机制的EEPROM
|
SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
ST Microelectronics
STMicroelectronics N.V.
|
