| PART |
Description |
Maker |
| K4R441869B-NMCK7 K4R441869B-NMCK8 K4R271669B-NMCG6 |
256K x 18 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz.
256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz.
256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz.
K4R271669B:Direct RDRAMData Sheet
256K x 16/18 bit x 32s banks Direct RDRAMTM
256K x 16 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz.
256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz.
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| WM72016-6-DGTR |
16Kbit Secure F-RAM Memory with Gen-2 RFID Access & Serial Port Direct Memory Access
|
Ramtron International Corporation
|
| SI3010 SI3010-X-FS SI3018 SI3019 SI3019-X-FS SI301 |
GLOBAL SERIAL INTERFACE DIRECT ACCESS ARRANGEMENT
|
Silicon Laboratories
SILABS
|
| MC68440 |
Dual-Channel Direct Memory Access Controller
|
Motorola, Inc
|
| MC68450 |
Technical Summary Direct Memory Access Controller
From old datasheet system
|
Motorola
|
| KLA1T109-43-LF |
RJ-45 needs to be matched FCC standard
|
Bothhand USA, LP.
|
| HYMR16416 HYMR16418H-840 |
32Mx16|2.5V|40|-|Direct RDRAM - 64MB RIMM
64M X 18 DIRECT RAMBUS DRAM MODULE, 40 ns, DMA184 RIMM-184
|
Hynix Semiconductor, Inc.
|
| DR-WLS1273L-102 |
FCC/ETSI/IC Certified WLAN/Bluetooth Multifunction Module
|
RF Monolithics, Inc
|
| PBW-1206-33 PBW-1201-33 PBW-1202-33 PBW-1203-33 |
KPTC2E10-6S 设备设计符合EMI规范，如VCCI，CISPR，催化裂化，德国VDE
Equipment Designed to Conform EMI Regulations Such As VCCI/CISPR/FCC/VDE/etc
KPTC 10C 10#20 PIN RECP
KPTC 6C 6#20 SKT RECP
KPTC 6C 6#20 PIN RECP
Equipment Designed to Conform EMI Regulations Such As VCCI,CISPR,FCC,VDE,etc
|
Bivar, Inc.
LAMBDA[DENSEI-LAMBDA]
|
| 82C37 HS-82C37RH |
CMOS High Performance Programmable DMA Controller
Direct Memory Access Controller, CMOS, 2.5MBPS, 50A, Rad-Hard
DMA Controller, Programmable, CMOS, 5, 8, and 12.5MHz
|
Intersil
|
