| PART |
Description |
Maker |
| IRFM224B IRFM224BL99Z |
920 mA, 250 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
250V N-Channel MOSFET
|
FAIRCHILD SEMICONDUCTOR CORP
FAIRCHILD[Fairchild Semiconductor]
|
| FQB3N25 FQI3N25 FQI3N25TU |
250V N-Channel QFET
250 N-Channel MOSFET
250V N-Channel MOSFET 2.8 A, 250 V, 2.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
|
http://
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
| 3404.2411.22 3404.2422.11 |
Surface Mount Fuse with Clip, 4.2 x 11.1 mm, Time-Lag T, UMZ 250 = UMT 250 (Au) UMC 250
|
Schurter Inc.
|
| 3404.2420.XX 3404.2417.XX 3404.2412.XX 3404.2413.X |
Surface Mount Fuse with Clip, 11.1 x 3.8 mm, Time-Lag T, UMZ 250 = UMT 250 (Au) UMC 250
|
Schurter Inc.
|
| MTP9N25E MTP9N25 MTP9N25E-D |
TMOS POWER FET 9.0 AMPERES 250 VOLTS RDS(on) = 0.45 OHM 9 A, 250 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
ON Semiconductor
|
| TC0217A |
SAW Resonator 433.920 MHz SMD 5X5 mm
|
TAI-SAW TECHNOLOGY CO., LTD.
|
| TC0201A |
SAW Resonator 433.920 MHz SMD 5X5 mm
|
TAI-SAW TECHNOLOGY CO., LTD.
|
| TC433EDA |
SAW Resonator 433.920 MHz SMD 5X5 mm
|
TAI-SAW TECHNOLOGY CO., LTD.
|
| 0918BD41D050 |
920/1885 MHz Dual Band Balun
|
Johanson Technology Inc.
|
| SM09296-51LD |
920 - 960 MHz 120 Watt Power Amplifier
|
Stealth Microwave, Inc.
|
| PTFB091507FH |
Thermally-Enhanced High Power RF LDMOS FET 160 W, 28 V, 920-960 MHz
|
Infineon Technologies AG
|
