PART |
Description |
Maker |
K4T51163QB K4T51163QB-GCCC K4T51163QB-GCD5 K4T5116 |
512Mb B-die DDR2 SDRAM
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
K4H510438D-UC/LA2 K4H510438D-UC/LB0 |
512Mb D-die DDR SDRAM Specification
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
K4H510438B-UC_LA2 K4H510438B-UC_LB0 K4H510438B-TC_ |
512MB B-DIE DDR SDRAM SPECIFICATION
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
K4T51163QE K4T51083QE |
512Mb E-die DDR2 SDRAM Specification
|
Samsung semiconductor
|
K4H511638F-LC/LCC K4H510438F-LC/LB3 K4H510838F-LC/ |
512Mb F-die DDR SDRAM Specification
|
Samsung semiconductor
|
K4H510738E-TC_LB0 K4H510638E-TC_LA2 K4H510638E-TC_ |
Stacked 512Mb E-die DDR SDRAM Specification (x4/x8)
|
SAMSUNG[Samsung semiconductor]
|
K4S510832B-CL75 K4S510832B-UC75 K4S510432B-CL75 K4 |
512Mb B-die SDRAM Specification 512MB的乙芯片内存规格 32M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
http:// Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
K4H510838C-ZCCC K4H510438C-ZCCC K4H510838C-ZCB3 K4 |
512Mb C-die DDR SDRAM Specification 荤的512Mb芯片DDR SDRAM内存规格 CAP 0.01UF 1000V 10% X7R SMD-1812 TR-13 FLEXITERM
|
http:// Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
|
EBS51RC4ACFC-7A EBS51RC4ACFC EBS51RC4ACFC-75 |
512MB Registered SDRAM DIMM 512MB的注册SDRAM的内 512MB Registered SDRAM DIMM 64M X 72 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168
|
Elpida Memory, Inc. ELPIDA[Elpida Memory]
|
HYB25D512160BE-5 HYB25D512800BC-5 HYB25D512800BE-5 |
DDR SDRAM Components - 512Mb (32Mx16) DDR400 (3-3-3) DDR SDRAM Components - 512Mb FBGA (64Mx8) DDR400 (3-3-3) DDR SDRAM Components - 512Mb (64Mx8) DDR400 (3-3-3) DDR SDRAM Components - 512Mb FBGA (64Mx8) DDR333 (2.5-3-3) DDR SDRAM Components - 512Mb (32Mx16) DDR333 (2.5-3-3) DDR SDRAM Components - 512Mb FBGA (128Mx4) DDR333 (2.5-3-3) DDR SDRAM Components - 512Mb (64Mx8) DDR333 (2.5-3-3) DDR SDRAM Components - 512Mb (128Mx4) DDR266A (2-3-3)
|
Infineon
|
M470L6524C M470L6524CU0-LCC M470L3324CU0-CA2 M470L |
DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb C-die DDR SDRAM的缓冲模8 4针缓冲模块的基于C12Mb芯片
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
HYS64V64220GU-75-C2 HYS72V64220GU-75-C2 HYS72V6422 |
3.3 V 64M x 64/72-Bit/ 512MByte SDRAM Modules 168-pin Unbuffered DIMM Modules SDRAM Modules - 512MB PC133 (2-2-2) 2-bank; End-of-Life SDRAM Modules - 512MB PC133 (2-2-2) 2-bank (ECC); End-of-Life SDRAM Modules - 512MB PC133 (3-3-3) 2-bank (ECC); End-of-Life SDRAM|64MX64|CMOS|DIMM|168PIN|PLASTIC SDRAM|64MX72|CMOS|DIMM|168PIN|PLASTIC 3.3 V 64M x 64/72-Bit, 512MByte SDRAM Modules 168-pin Unbuffered DIMM Modules 3.3400 x 64/72-Bit512MByte SDRAM内存模块168针脚无缓冲DIMM模块 64M X 64 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168 3.3 V 64M x 64/72-Bit, 512MByte SDRAM Modules 168-pin Unbuffered DIMM Modules
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INFINEON[Infineon Technologies AG] Infineon Technologies A...
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