PART |
Description |
Maker |
K7P401822M |
128Kx36 & 256Kx18 Synchronous Pipelined SRAM Data Sheet
|
Samsung Electronic
|
CY7C1352F CY7C1352F-100AC CY7C1352F-100AI CY7C1352 |
4-Mbit (256Kx18) Pipelined SRAM with NoBLArchitecture 256K X 18 ZBT SRAM, 2.8 ns, PQFP100 4-Mbit (256Kx18) Pipelined SRAM with NoBL(TM) Architecture 4-Mbit (256Kx18) Pipelined SRAM with NoBL Architecture 4-Mbit (256Kx18) Pipelined SRAM with NoBL⑩ Architecture
|
Cypress Semiconductor, Corp. Cypress Semiconductor Corp. CYPRESS[Cypress Semiconductor]
|
7C1351-66 7C1351-40 7C1351-50 CY7C1351-66AC |
128Kx36 Flow-Through SRAM with NoBL TM Architecture 128K × 36至流通过与总线延迟TM架构的SRAM 128Kx36 Flow-Through SRAM with NoBL TM Architecture 128K X 36 ZBT SRAM, 11 ns, PQFP100
|
Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
|
KM736V799 |
128Kx36 Synchronous SRAM
|
Samsung Semiconductor
|
K7B403625M |
128Kx36-Bit Synchronous Burst SRAM
|
SAMSUNG[Samsung semiconductor]
|
KM736V787 |
128Kx36-Bit Synchronous Burst SRAM(128Kx36位同步静RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
KM736V789 |
128Kx36-Bit Synchronous Pipelined Burst SRAM(128Kx36位同步流水线脉冲静RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
KM736V799 |
128Kx36-Bit Synchronous Pipelined Burst SRAM(128Kx36浣??姝ユ?姘寸嚎??????RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
CY7C1352G-250AXI CY7C1352G CY7C1352G-133AXC CY7C13 |
4-Mbit (256Kx18) Pipelined SRAM with NoBL Architecture 256K X 18 ZBT SRAM, 4 ns, PQFP100
|
Cypress Semiconductor, Corp. Cypress Semiconductor Corp. CYPRESS[Cypress Semiconductor]
|
CY7C1350B-133AI CY7C1350B-133AC CY7C1350B-166AC |
128Kx36 Pipelined SRAM with NoBL Architecture 128K X 36 ZBT SRAM, 3.5 ns, PQFP100
|
Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
|
X9119TV14-2.7T1 |
Single Digitally Controlled (XDCP™) Potentiometer; Temperature Range: 0°C to 70°C; Package: 14-TSSOP T&R
|
INTERSIL CORP
|
ICL7665S06 ICL7665SAIBAZA ICL7665SAIPAZ ICL7665SIB |
CMOS Micropower Over/Under Voltage Detector; Temperature Range: 0°C to 70°C; Package: 8-SOIC T&R
|
INTERSIL[Intersil Corporation]
|