PART |
Description |
Maker |
MCM63Z737 |
128K x 36 and 256K x 18 Bit Flow-Through ZBT RAM Synchronous Fast Static RAM From old datasheet system
|
Motorola
|
KM68257C-12 KM68257CJ-12 KM68257CJ-20 KM68257CL-12 |
32Kx8 bit high speed static RAM (5V operating), 20ns 32Kx8 bit high speed static RAM (5V operating), 15ns 32Kx8 bit high speed static RAM (5V operating), 12ns 32Kx8 Bit High Speed Static RAM(5V Operating(, Evolutionary Pin out. Operated at Commercial Temperature Range. 32Kx8位高速静态RAM5V的工作(,进化引脚了。在商业温度范围工作
|
Samsung Electronic SAMSUNG[Samsung semiconductor] Samsung Semiconductor Co., Ltd.
|
IDT71V416YS15YGI IDT71V416YS IDT71V416YL10BEG IDT7 |
3.3V 256K x 16 Static RAM Center Pwr & Gnd Pinout 3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) 3.3V的CMOS静态RAM 4梅格56K x 16位) 3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) 256K X 16 STANDARD SRAM, 12 ns, PDSO44
|
IDT[Integrated Device Technology] Integrated Device Technology, Inc.
|
MCM2018 |
Fast 16K-Bit Static RAM
|
Motorola
|
MCM6209C MCM6209CJ15 MCM6209CJ15R2 MCM6209CJ20 MCM |
64K x 4 Bit Fast Static RAM
|
MOTOROLA[Motorola, Inc] MOTOROLA[Motorola Inc]
|
KM68257E KM68257E-10 KM68257E-12 KM68257E-15 KM682 |
32Kx8 bit high-speed CMOS static RAM (5V operating), 15ns 32Kx8 bit high-speed CMOS static RAM (5V operating), 10ns 32Kx8 Bit High-Speed CMOS Static RAM(5V Operating) Operated at Commercial and Industrial Temperature Ranges. 32Kx8位高速CMOS静态RAMV的工作),在商业和工业温度范围操作 32Kx8 bit high-speed CMOS static RAM (5V operating), 12ns
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
UPD424440LE-70 UPD424440LE-60 UPD424440LE-80 UPD42 |
MoBL® 8-Mbit (1024K x 8) Static RAM MoBL® 8-Mbit (512K x 16) Static RAM CY62167DV30 MoBL® - 16-Mbit (1M x 16) Static RAM x4 Fast Page Mode DRAM x4快速页面模式的DRAM
|
Vishay Intertechnology, Inc.
|
MCM63F737KZP8.5 MCM63F819KZP8.5 MCM63F737KZP8.5R M |
128K x 36 and 256K x 18 Bit Flow??hrough BurstRAM Synchronous Fast Static RAM 128K x 36 and 256K x 18 Bit Flow?Through BurstRAM Synchronous Fast Static RAM
|
Motorola, Inc
|
K6T1008C2C K6T1008C2C-RB55 K6T1008C2C-RB70 K6T1008 |
128K X 8 STANDARD SRAM, 70 ns, PDSO32 128K x8 bit Low Power CMOS Static RAM 128K的x8位低功CMOS静态RAM 128K x8 bit Low Power CMOS Static RAM 128K的x8位低功耗CMOS静态RAM 55/70ns; V(cc): 4.5 to 5.5V; 128 x 8-bit low power CMOS static RAM 55ns; 128 x 8-bit low power CMOS static RAM 70ns; 128 x 8-bit low power CMOS static RAM
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Electronic
|
MCM67C618BFN7 MCM67C618B MCM67C618BFN5 |
64K x 18 Bit BurstRAM Synchronous Fast Static RAM
|
Motorola, Inc. MOTOROLA[Motorola, Inc]
|
MCM67C618AFN5 MCM67C618AFN7 MCM67C618A |
64K x 18 Bit BurstRAM Synchronous Fast Static RAM
|
Motorola, Inc. MOTOROLA[Motorola, Inc]
|