| PART |
Description |
Maker |
| U17 |
Controlled Avalanche Diode
|
Hitachi
|
| BAS31 |
0.25 A, 110 V, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236AB
Dual In-Series General-Purpose Controlled-Avalanche Diode
|
VISHAY SEMICONDUCTORS
|
| NTE570 |
Silicon Controlled Avalanche Diode
|
NTE[NTE Electronics]
|
| BYV96E |
Diode Switching 1KV 1.5A 2-Pin SOD-57
Fast soft-recovery controlled avalanche rectifiers
|
New Jersey Semiconductors
New Jersey Semi-Conduct...
|
| XR25UFG XR50FF3 XR50FF5 XR50SG XR50UFG |
0.2 A, SILICON, SIGNAL DIODE
H. V. Controlled Avalanche Rectifiers - Axial Lead 0.050A - 0.20A ?30ns - 3000ns
|
VOLTAGE MULTIPLIERS INC
Voltage Multipliers Inc...
|
| BY527 BY527_1 |
Controlled avalanche rectifier(控制的雪崩整流器) SILICON, RECTIFIER DIODE
From old datasheet system
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| BYM56 |
Controlled avalanche rectifiers
|
Philips
|
| BAX12A |
CONTROLLED AVALANCHE DIODES
|
SUNMATE electronic Co.,...
|
| BAS12 BAS11 |
Controlled avalanche rectifiers
|
Philips
NXP Semiconductors
http://
|
| S1B S1K S1A S1G S1D S1M S1 S1J |
SMA controlled avalanche rectifiers
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| S1 S1D |
SMA controlled avalanche rectifiers
|
NXP
|
| BYD17M BYD17D BYD17J BYD17K BYD17G |
GENERAL PURPOSE CONTROLLED AVALANCHE RECTIFIERS
|
EIC discrete Semiconductors
EIC discrete Semiconduc...
|
