PART |
Description |
Maker |
GS8330LW72C-200 GS8330LW36C-250I GS8330LW36C-200 G |
36Mb x1Lp CMOS I/O Late Write SigmaRAM 512K X 72 LATE-WRITE SRAM, 2.1 ns, PBGA209 36Mb Σ1x1Lp CMOS I/O Late Write SigmaRAM
|
GSI Technology, Inc.
|
W9725G6KB25A W9725G6KB-25 W9725G6KB-18 W9725G6KB-3 |
DLL aligns DQ and DQS transitions with clock, Data masks (DM) for write data, Write Data Mask
|
Winbond
|
AT49LV4096A AT49BV4096A AT49LV4096A-70C5I |
256K X 16 FLASH 2.7V PROM, 70 ns, PBGA48 4M bit, 2.7-Volt Read and 2.7-Volt Write, Byte-Write Flash, Bottom Boot 4M bit, 3.0-Volt Read and 3.0-Volt Write, Byte-Write Flash, Bottom Boot
|
ATMEL CORP
|
SSI32R5111M-8CL SSI32R5111R-4CL SSI32R5111RM-6CL |
8-Channel Disk Read/Write Circuit 8通道磁盘写电 4-Channel Disk/Tape Read/Write Circuit 4通道的磁磁带写电 6-Channel Read/Write Circuit 6通道写电
|
Electronic Theatre Controls, Inc. HIROSE ELECTRIC Co., Ltd.
|
XR-511R-4D XR-511-6CP XR-511-6CJ XR-511-6D XR-511R |
4-Channel Disk/Tape Read/Write Circuit 8-Channel Disk Read/Write Circuit 8通道磁盘写电 6-Channel Read/Write Circuit 6通道写电
|
Linear Technology, Corp.
|
AT28BV64B-25TC AT28BV64B-20PC AT28BV64B-20JI AT28B |
64K (8K x 8) Battery-Voltage?/a> Parallel EEPROM with Page Write and Software Data Protection 64K (8K x 8) Battery-Voltage⑩ Parallel EEPROM with Page Write and Software Data Protection From old datasheet system 64K EEPROM with 64-Byte Page & Software Protection, 2.7-Volt 64K (8K x 8) Battery-Voltage Parallel EEPROM with Page Write and Software Data Protection High Speed CMOS Logic Triple 3-Input OR Gates 14-SOIC -55 to 125 8K X 8 EEPROM 3V, 250 ns, PDSO28 64K (8K x 8) Battery-VoltageParallel EEPROM with Page Write and Software Data Protection 8K X 8 EEPROM 3V, 200 ns, PDSO28
|
ATMEL[ATMEL Corporation] Atmel, Corp.
|
SSI32R510AR-6CP SSI32R510AR-6CH SSI32R510AR-6CL SS |
6-Channel Read/Write Circuit 4-Channel Disk/Tape Read/Write Circuit 4通道的磁磁带写电
|
Electronic Theatre Controls, Inc.
|
GS8170DW36C-250 GS8170DW36C-250I GS8170DW36C-300 G |
250MHz 512K x 36 18MB double late write sigmaRAM SRAM 300MHz 512K x 36 18MB double late write sigmaRAM SRAM 333MHz 512K x 36 18MB double late write sigmaRAM SRAM 333MHz 256K x 72 18MB double late write sigmaRAM SRAM
|
GSI Technology
|
VM7200 VM7206 VM7202 VM7208 VM7204 |
(VM7200 Series) Thin Film Head / Read/Write Preamplifier 2,4,6 OR 8-CHANNEL, 5-VOLT, THIN-FILM HEAD, READ/WRITE PREAMPLIFIER
|
VTC N.A. ETC List of Unclassifed Manufacturers
|
SSI32R2210X-4CL SSI32R2210X-4CV SSI32R2210W-4CV SS |
2-Channel Disk Read/Write Circuit 4-Channel Disk/Tape Read/Write Circuit 4通道的磁磁带写电
|
Ecliptek, Corp. Linear Technology, Corp.
|
HA166102T HA166102FP HA166104FP |
2-Channel Disk Read/Write Circuit 2通道磁盘写电 4-Channel Disk/Tape Read/Write Circuit
|
Glenair, Inc.
|