| PART |
Description |
Maker |
| CY27H512-30JC CY27H512-30WC CY27H512-35HC CY27H512 |
64K x 8 High-Speed CMOS EPROM
64K x 8 High-Speed CMOS EPROM 64K X 8 OTPROM, 25 ns, PDSO28
64K x 8 High-Speed CMOS EPROM 64K X 8 OTPROM, 55 ns, PDSO28
64K x 8 High-Speed CMOS EPROM 64K X 8 OTPROM, 30 ns, PDIP28
64K x 8 High-Speed CMOS EPROM 64K X 8 UVPROM, 55 ns, CDIP28
64K x 8 High-Speed CMOS EPROM 64K X 8 UVPROM, 45 ns, CDIP28
64K x 8 High-Speed CMOS EPROM 64K X 8 OTPROM, 55 ns, CDIP28
64K x 8 High-Speed CMOS EPROM 64K X 8 UVPROM, 45 ns, CQCC32
64K x 8 High-Speed CMOS EPROM 64K X 8 OTPROM, 70 ns, PDIP28
64K x 8 High-Speed CMOS EPROM 64K X 8 OTPROM, 70 ns, PQCC32
64K x 8 High-Speed CMOS EPROM 64K X 8 UVPROM, 70 ns, CQCC32
64K x 8 High-Speed CMOS EPROM 64K X 8 OTPROM, 70 ns, PDSO28
CAP SM CER 2200PFD 50V 10% X7R 0805
|
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
CYPRESS[Cypress Semiconductor]
|
| IDT7008L20J IDT7008L20JB IDT7008L20JI IDT7008S_L I |
64K x 8 Dual-Port RAM
From old datasheet system
IC,SRAM,64KX8,CMOS,LDCC,84PIN,PLASTIC
HIGH-SPEED 64K x 8 DUAL-PORT STATIC RAM 64K X 8 DUAL-PORT SRAM, 20 ns, CPGA84
HIGH-SPEED 64K x 8 DUAL-PORT STATIC RAM 64K X 8 DUAL-PORT SRAM, 55 ns, PQCC84
HIGH-SPEED 64K x 8 DUAL-PORT STATIC RAM 64K X 8 DUAL-PORT SRAM, 20 ns, PQFP100
|
Integrated Device Techn...
IDT[Integrated Device Technology]
Integrated Device Technology Inc
Integrated Device Technology, Inc.
|
| W25P240A W25P240A-6 W25P240A-6A W25P240AF-6 W25P24 |
From old datasheet system
64K X 64 BURST PIPELINED HIGH-SPEED CMOS STATIC RAM
64K*32 high speed, low power synchronous-burst pipelined CMOS static RAM
|
Winbond Electronics Corp
WINBOND[Winbond]
|
| IS61LV6416 |
64K x 16 High-Speed CMOS Static RAM(3.3V,64K x 16 高速CMOS静态RAM) 64K的16高速CMOS静态RAM.3伏，64K的16高速的CMOS静态RAM）的
|
Integrated Silicon Solution, Inc.
|
| W24512 W24512A W24512AJ-25 W24512AS-25 W24512AT-25 |
64K X 8 HIGH SPEED CMOS STATIC RAM
|
Winbond Electronics Corp
|
| IS61WV6416EEBLL |
64K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC
|
Integrated Silicon Solution, Inc
|
| KM6161002C KM6161002C-12 KM6161002C-15 KM6161002C- |
CMOS SRAM
64K x 16 Bit High-Speed CMOS Static RAM (5.0V Operating) Operated at Commercial and Industrial Temperature Range
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| CXK5T8512TM/TN-10LLX CXK5T8512TM/TN-12LLX CXK5T851 |
64K X 8 STANDARD SRAM, 120 ns, PDSO32
65536-word x 8-bit High Speed CMOS Static RAM
65536-word x 8-bit High Speed CMOS Static RAM
|
SONY
|
| IS61C512 IS61C512-15J IS61C512-15JI IS61C512-15NI |
ASYNCHRONOUS STATIC RAM
64K X 8 HIGH-SPEED CMOS STATIC RAM
|
ICSI[Integrated Circuit Solution Inc]
|
| KM68257E KM68257E-10 KM68257E-12 KM68257E-15 KM682 |
32Kx8 bit high-speed CMOS static RAM (5V operating), 15ns
32Kx8 bit high-speed CMOS static RAM (5V operating), 10ns
32Kx8 Bit High-Speed CMOS Static RAM(5V Operating) Operated at Commercial and Industrial Temperature Ranges. 32Kx8位高速CMOS静态RAMV的工作），在商业和工业温度范围操作
32Kx8 bit high-speed CMOS static RAM (5V operating), 12ns
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| W25P243A W25P243A-4A W25P243A-5 W25P243A-6 W25P243 |
64K X 64 BURST PIPELINED HIGH-SPEED CMOS STATIC RAM
From old datasheet system
DIODE ZENER QUAD COMMON-ANODE 200mW 12Vz 5mA-Izt 0.05 0.1uA-Ir 8 SOT-363 3K/REEL 64K X 64 STANDARD SRAM, 4.5 ns, PQFP128
|
WINBOND[Winbond]
Winbond Electronics Corp
Vishay Intertechnology, Inc.
|
