| PART |
Description |
Maker |
| MBR20045CTR |
High Power Schottky Rectifiers - Twin Tower Modules
|
America Semiconductor
|
| MBR60080CTR MBR600100CTR |
High Power Schottky Rectifiers - Twin Tower Modules
|
America Semiconductor
|
| SB01W05S |
Schottky Barrier Diode (Twin Type Cathode Common) 50V, 100mA Rectifier
Small signal(twin type)
|
Sanyo Semiconductor
|
| UPA862TD-T3 UPA862TD-A UPA862TD-T3-A |
NPN Silicon RF Twin Transistor with 2 Different Elements
|
Renesas Electronics Corporation
|
| UPA839TF-T1 UPA839TF |
NPN SILICON EPITAXIAL TWIN TRANSISTOR
|
NEC[NEC]
|
| UPA835TF UPA835TF-T1 |
NPN SILICON EPITAXIAL TWIN TRANSISTOR
|
NEC
|
| DAN208 DAP208 |
Silicon-Twin Diodes Center tap
|
Diotec Semiconductor AG
DIOTEC[Diotec Semiconductor]
|
| UPA827TF-T1-A UPA827TF |
NPN SILICON EPITAXIAL TWIN TRANSISTOR
|
NEC[NEC]
|
| UPA838TF-T1 UPA838TF |
NPN SILICON EPITAXIAL TWIN TRANSISTOR NPN硅外延双晶体
|
NEC, Corp.
NEC[NEC]
|
| UPA826TF UPA826TF-T1 |
NPN SILICON EPITAXIAL TWIN TRANSISTOR
From old datasheet system
|
NEC Corp.
NEC[NEC]
|
| PBY277 1N1199A 1N1200A 1N1202A 1N1204A 1N1206A 1N3 |
Silicon-Power Rectifiers
Silicon-Power Rectifiers 12 A, 200 V, SILICON, RECTIFIER DIODE, DO-4
Silicon-Power Rectifiers 12 A, 800 V, SILICON, RECTIFIER DIODE, DO-4
Replacement with:PBY272R
|
Diotec Semiconductor AG
DIOTEC[Diotec Semiconductor]
Diotec Elektronische
|
| MCR72-8 MCR72-3 MCR72-6 ON1829 MCR72-D |
Sensitive Gate Silicon Controled Rectifiers Reverse Blocking Thyristor
SCRs 8 AMPERES RMS 100 thru 600 VOLTS
SENSITIVE GATE SILICON CONTROLLED RECTIFIERS
From old datasheet system
|
ONSEMI[ON Semiconductor]
|
