| PART |
Description |
Maker |
| MGFL45V1920 L45V1920 |
From old datasheet system
1.9-2.0GHz BAND 32W INTERNALLY MATCHD GaAs FET
1.9-2.0 GHz BAND 32W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFS45V2325A |
2.3 - 2.5GHz BAND 32W INTERNALLY MATCHD GaAs FET 2.3 - 2.5GHz频带2W国内MATCHD砷化镓场效应
2.3-2.5 GHz BAND 32W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| MGFC45V5053A C455053A |
5.05 - 5.25GHz BAND 32W INTERNALLY MATCHED GaAs FET
From old datasheet system
5.05~5.25GHz BAND 32W INTERNALLY MATCHD GaAs FET
5.05-5.25GHz BAND 32W INTERNALLY MATCHD GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| MGFS45V2123A MGFS45V2123A11 |
2.1-2.3 GHz BAND / 32W
|
Mitsubishi Electric Semiconductor
|
| MGFS45V2325A11 |
2.3-2.5 GHz BAND / 32W
|
Mitsubishi Electric Semiconductor
|
| MGFC45V3436A_04 MGFC45V3436A MGFC45V3436A04 |
3.4 - 3.6GHz BAND 32W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC45V6472A C456472A |
6.4-7.2GHz BAND 32W INTERNALLY MATCHED GaAs FET
From old datasheet system
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC39V4450A_04 MGFC39V4450A MGFC39V4450A04 |
4.4 ~ 5.0GHz BAND 8W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFL48L1920 MGFL48V1920 |
1.9-2.0GHz BAND 60W GaAs FET
1.9-2.0 GHz BAND 60W GaAs FET
|
Mitsubishi Electric Corporation
|
| IRPLLNR2U IRPLLNR2E |
32W Fully-integrated linear lighting ballast, IR21571, U.S. version, 120VAC line, 32W/T8 lamp
Fully-integrated linear lighting ballast, IR21571, European version, 230VAC line, 36W/T8 lamp
|
International Rectifier
|
| TDA2050 |
32W HI-FI AUDIO POWER AMPLIFIER
|
UTC
|
| TDA2050V |
32W Hi-Fi AUDIO POWER AMPLIFIER 32W高保真音频功率放大器
|
STMicroelectronics N.V.
|
