| PART |
Description |
Maker |
| MU310 MU39 MU37 MU38 |
POWER RECTIFIERS(3.0A500-1000V)
POWER RECTIFIERS(3.0A,500-1000V)
|
MOSPEC[Mospec Semiconductor]
|
| SBTC-2-25_25L SBTC-2-25 SBTC-2-25L SBTC-2-2525L |
Power Splitter/Combiners 2 Way-050з 1000 to 2500 MHz 1000 MHz - 2500 MHz RF/MICROWAVE COMBINER, 2.5 dB INSERTION LOSS
Power Splitter/Combiners 2 Way-0° 50?/a> 1000 to 2500 MHz
Power Splitter/Combiners 2 Way-0° 50 1000 to 2500 MHz
Power Splitter/Combiners 2 Way-0∑ 50з 1000 to 2500 MHz
Power Splitter/Combiners 2 Way-0 50 1000 to 2500 MHz
|
MINI[Mini-Circuits]
|
| APT10078SLL APT10078BLL APT10078BLL_04 APT10078BLL |
14 A, 1000 V, 0.78 ohm, N-CHANNEL, Si, POWER, MOSFET D3PAK-3
14 A, 1000 V, 0.78 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD TO-247, 3 PIN
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
|
Microsemi, Corp.
ADPOW[Advanced Power Technology]
|
| MTP3N100E MTP3N100E_D ON2598 3N100E MTP3N100E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
From old datasheet system
TMOS POWER FET 3.0 AMPERES 1000 VOLTS RDS(on) = 4.0 OHM
3 A, 1000 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
MOTOROLA[Motorola, Inc]
Motorola, Inc.
ON SEMICONDUCTOR
|
| 2N6533 2N6532 2N6530 2N6531 |
8 A N-P-N darlington power transistor. 120 V. 60 W. Gain of 1000 at 3 A.
8 A N-P-N darlington power transistor. 100 V. 60 W. Gain of 1000 at 5 A.
8 A N-P-N darlington power transistor. 100 V. 60 W. Gain of 500 at 3 A.
8 A N-P-N darlington power transistor. 80 V. 60 W. Gain of 1000 at 5 A.
8-AMPERE N-P-N DARLINGTON POWER TRANSISTORS
From old datasheet system
|
General Electric Solid State
ETC[ETC]
|
| SMA18-1 A18-1 A18-1_1 CA18-1 A18-11 |
10 MHz - 1000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
Cascadable Amplifier 10 to 1000 MHz
|
MACOM[Tyco Electronics]
|
| ZFL-1000VH |
Amplifier 50惟 Medium Power 10 to 1000 MHz
Amplifier 50Ω Medium Power 10 to 1000 MHz
|
Mini-Circuits
|
| APT10021JLL_04 APT10021JLL APT10021JLL04 |
Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
37 A, 1000 V, 0.21 ohm, N-CHANNEL, Si, POWER, MOSFET ISOTOP-4
|
Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Microsemi, Corp.
|
| IXFK21N100F IXFX21N100F |
HiPerRF Power MOSFETs F-Class: MegaHertz Switching 21 A, 1000 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
|
IXYS, Corp.
IXYS Corporation
|
