| PART |
Description |
Maker |
| 5910 |
HIGH-VOLTAGE BiMOS III 10-BIT SERIAL-INPUT,LATCHED DRIVERS
From old datasheet system
|
Allegro
|
| UCN5895 UCN5895A UCN5895EP A5895SLW 5895 |
BiMOS II 8-BIT SERIAL INPUT, LATCHED SOURCE DRIVERS
BiMOS II 8-BIT SERIAL INPUT LATCHED SOURCE DRIVERS
From old datasheet system
|
Allegro MicroSystems, Inc.
ALLEGRO[Allegro MicroSystems]
|
| UCN5821LW A5821 UCN5821A |
BiMOS II 8-Bit Serial Input Latched Drivers
|
Allegro MicroSystems, Inc.
ALLEGRO[Allegro MicroSystems]
|
| UCN5832EP A5832 UCN5832A |
BiMOS II 32-BIT SERIAL-INPUT, LATCHED DRIVERS
|
Allegro MicroSystems, Inc.
ALLEGRO[Allegro MicroSystems]
|
| CA3130 |
High Rellablilty BiMOS Operational Amplifiers
|
RCA Solid State
|
| UCN5811 UCN5811A 5811 |
BiMOS II 12-BIT SERIAL-INPUT, LATCHED SOURCE DRIVERS
|
Allegro MicroSystems, Inc.
ALLEGRO[Allegro MicroSystems]
|
| UCN5881 UCN5881EP 5881 ALLEGROMICROSYSTEMSINC.-UCN |
BiMOS II DUAL 8-BIT LATCHED DRIVER WITH READ BACK
From old datasheet system
|
Allegro MicroSystems, Inc.
ALLEGRO[Allegro MicroSystems]
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| BUT70W 8602 |
HIGH VOLTAGE NPN POWER TRANSISTOR
HIGH POWER NPN TRANSISTOR
From old datasheet system
HIGH VOLTAGE NPN POWER TRANSISTOR
8-bit MCU for automotive, 16 Kbyte Flash/ROM, 10-bit ADC, 4 timers, SPI, SCI
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
|
