PART |
Description |
Maker |
IXFX120N20 IXFK120N20 |
HiPerFET Power MOSFETs CAP 0.01UF 50V 10% NP0(C0G) DIP-2 TUBE-PAK R-MIL-PRF-39014/22 120 A, 200 V, 0.017 ohm, N-CHANNEL, Si, POWER, MOSFET Discrete MOSFETs: HiPerFET Power MOSFETS
|
IXYS, Corp. IXYS[IXYS Corporation]
|
FSYC260R4 FSYC260D FSYC260D1 FSYC260D3 FSYC260R FS |
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 46 A, 200 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 抗辐射,抗SEGR N沟道功率MOSFET
|
INTERSIL[Intersil Corporation] Intersil, Corp.
|
VP2020L BSS92 |
Enhancement-Mode MOSFET Transistors P-Channel 200-V (D-S) MOSFETs
|
VISAY[Vishay Siliconix] Vishay Intertechnology,Inc.
|
RFM12N10 RFM12N08 RFP12N08 |
12A, 80Vand 100V, 0.200 Ohm, N-Channel Power MOSFETs
|
New Jersey Semi-Conductor P... New Jersey Semi-Conduct...
|
FSL23A4R FSL23A4D FN4474 FSL23A4R4 FSL23A4D1 FSL23 |
5A, 250V, 0.480 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs 5A, 250V, 0.480 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs 5 A, 250 V, 0.48 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF RECTIFIER BRIDGE 6A 100V 125A-ifsm 1.1V-vf 10uA-ir PBPC3 200/BOX 5 A, 250 V, 0.48 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF RECTIFIER BRIDGE 3A 600V 50A-ifsm 1.2V-vf 10uA-ir PBPC3 200/BOX RECTIFIER BRIDGE 3A 1000V 50A-ifsm 1.2V-vf 10uA-ir PBPC3 200/BOX From old datasheet system 5A/ 250V/ 0.480 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
|
Intersil, Corp. INTERSIL[Intersil Corporation]
|
FSYE923A0R4 FSYE923A0D FSYE923A0D1 FSYE923A0D3 FSY |
Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs 6 A, 200 V, 1.18 ohm, P-CHANNEL, Si, POWER, MOSFET
|
Intersil, Corp. INTERSIL[Intersil Corporation]
|
SHD218413A SHD239503 |
POWER MOSFETS 50 A, 30 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET POWER MOSFETS 30 A, 200 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Sensitron Semiconductor
|
APT20M38BVR APT20M38BVRG |
Power MOSFET; Package: TO-247 [B]; ID (A): 67; RDS(on) (Ohms): 0.038; BVDSS (V): 200; 67 A, 200 V, 0.038 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 200V 67A 0.038 Ohm
|
Microsemi, Corp. ADPOW[Advanced Power Technology]
|
FSS23A0R FSS23A0D FSS23A0D1 FSS23A0D3 FSS23A0R1 FN |
9A, 200V, 0.330 Ohm, Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 9 A, 200 V, 0.33 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA From old datasheet system 9A/ 200V/ 0.330 Ohm/ Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
|
Intersil, Corp. INTERSIL[Intersil Corporation]
|
FSL923A0R3 FSL923A0D FSL923A0D1 FSL923A0D3 FSL923A |
5A, -200V, 0.670 Ohm, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs 5 A, 200 V, 0.67 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF 5A/ -200V/ 0.670 Ohm/ Radiation Hardened/ SEGR Resistant/ P-Channel Power MOSFETs
|
Intersil, Corp. INTERSIL[Intersil Corporation]
|
|