| PART |
Description |
Maker |
| IRF540_D ON0285 IRF540/D IRF540-D IRF540 |
27 A, 100 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
100V7A TMOS Power Field Effect Transistor （N-Channel Enhancement Mode Silicon Gate100V7A TMOS功率场效应管（N沟道增强型硅门）)
From old datasheet system
TMOS POWER FET 27 AMPERES
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
|
Motorola, Inc.
ON Semiconductor
|
| SSM3J02F |
600 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236
Field Effect Transistor Silicon P Channel MOS Type Power Management Switch High Speed Switching Applications
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
|
TOSHIBA[Toshiba Semiconductor]
Toshiba Corporation
|
| SSM3J13T |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII)
Field Effect Transistor Silicon P Channel MOS Type (U-MOSII) Power Management Switch High Speed Switching Applications
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| PTF10020 |
2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
125 Watts/ 860-960 MHz GOLDMOS Field Effect Transistor
125 Watts, 86060 MHz GOLDMOS Field Effect Transistor
|
ERICSSON POWER MODULES AB
Ericsson Microelectronics
|
| MRF1511N |
RF Power Field Effect Transistor
|
Freescale Semiconductor...
|
| MW6S010GMR1 MW6S010GNR1 MW6S010MR1 MW6S010 MW6S010 |
RF Power Field Effect Transistor
|
飞思卡尔半导体(中国)有限公司
FREESCALE[Freescale Semiconductor, Inc]
Freescale (Motorola)
|
| CMT02N60GN252 CMT02N60XN252 CMT02N6010 CMT02N60GN2 |
POWER FIELD EFFECT TRANSISTOR
|
Champion Microelectronic Corp.
Champion Microelectronic Co...
Champion Microelectroni...
|
| 27271SL |
RF Power Field Effect Transistor
|
Freescale Semiconductor, Inc
|
| MRF6P3300HR5 MRF6P3300H MRF6P3300HR3 MRF6P3300HR3_ |
RF Power Field Effect Transistor
|
FREESCALE[Freescale Semiconductor, Inc]
|
| MTP6N10 |
POWER FIELD EFFECT TRANSISTOR
|
MOTOROLA[Motorola, Inc]
|
| MTP2N80 |
Power Field Effect Transistor
|
New Jersey Semi-Conductor P...
|
