Part Number Hot Search : 
AVC16 M000000 T7200835 2N510902 E007609 75733 IRFIBC30 XXXBCP
Product Description
Full Text Search

UAA2016 - ZERO VOLTAGE SWITCH POWER CONTROLLER

UAA2016_61779.PDF Datasheet

 
Part No. UAA2016 UAA2016D UAA2016P
Description ZERO VOLTAGE SWITCH POWER CONTROLLER

File Size 133.13K  /  8 Page  

Maker


MOTOROLA[Motorola, Inc]



JITONG TECHNOLOGY
(CHINA HK & SZ)
Datasheet.hk's Sponsor

Part: UAA2016AD
Maker: ON Semiconductor
Pack: ETC
Stock: Reserved
Unit price for :
    50: $0.00
  100: $0.00
1000: $0.00

Email: oulindz@gmail.com

Contact us

Homepage http://www.freescale.com/
Download [ ]
[ UAA2016 UAA2016D UAA2016P Datasheet PDF Downlaod from Datasheet.HK ]
[UAA2016 UAA2016D UAA2016P Datasheet PDF Downlaod from Maxim4U.com ] :-)


[ View it Online ]   [ Search more for UAA2016 ]

[ Price & Availability of UAA2016 by FindChips.com ]

 Full text search : ZERO VOLTAGE SWITCH POWER CONTROLLER


 Related Part Number
PART Description Maker
SML80H12 SML100H11 N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:800V,Id(cont):11.5A,Rds(on):0.67Ω)(N沟道增强高电压功率MOS场效应管(Vdss:800V,Id(cont):11.5A,Rds(on):0.67Ω))
SemeLAB
SEME-LAB[Seme LAB]
2N5484 2N5485 2N5486 SST5484 SST5485 SST5486 High Frequency/General Purpose
N-Channel JFETs
MOSFET, P SO-8MOSFET, P SO-8; Transistor type:MOSFET; Transistor polarity:P; Voltage, Vds max:20V; Case style:SO-8; Current, Id cont:4.5A; Current, Idm pulse:-20A; Power, Pd:1.3W; Resistance, Rds on:0.04R; SMD:1; Charge, gate p
MOSFET, P SO-8MOSFET, P SO-8; Transistor type:MOSFET; Transistor polarity:P; Voltage, Vds max:20V; Case style:SO-8; Current, Id cont:5.6A; Current, Idm pulse:-30A; Power, Pd:1.25W; Resistance, Rds on:0.025R; SMD:1; Charge, gate p
Vishay Siliconix
Vishay Intertechnology,Inc.
IRFM250 N-Channel Power MOSFET(Vdss:200V,Id(cont):27.4A,Rds(on):0.100Ω)(N沟道功率MOS场效应管(Vdss:200V,Id(cont):27.4A,Rds(on):0.100Ω)) N沟道功率MOSFET(减振钢板基本:200伏,身份证(续)7.4A,的Rds(on):0.100Ω)(不适用马鞍山沟道功率场效应管(减振钢板基本00伏,身份证(续)7.4A时,RDS(对):0.100Ω))
Electronic Theatre Controls, Inc.
SEME-LAB
Seme LAB
IRFE230 2N6798U N-Channel Power MOSFET(Vdss:200V,Id(cont):4.8A,Rds(on):0.46Ω)(N沟道功率MOS场效应管(Vdss:200V,Id(cont):4.8A,Rds(on):0.46Ω)) N沟道功率MOSFET(减振钢板基本:200伏,身份证(续).8A时,RDS(上):0.46Ω)(不适用马鞍山沟道功率场效应管(减振钢板基本00伏,身份证(续).8A时,RDS(对):0.46Ω))
N-Channel N沟道
NXP Semiconductors N.V.
TT electronics Semelab Limited
Seme LAB
IRFE9130 P-Channel Power MOSFET(Vdss:-100V,Id(cont):-6.1A,Vdgr:-0.345V)(P沟道功率MOS场效应管(Vdss:-100V,Id(cont):-6.1A,Vdgr:-0.345V)) P沟道功率MOSFET(减振钢板基本:- 100V的,身份证(续) 6.1A,Vdgr 0.345V)性(P沟道功率马鞍山场效应管(减振钢板基本 100V的,身份证(续) 6.1AVdgr 0.345V))
Seme LAB
SML9030-T254 SML9030T254 P-Channel MOS Transistor(Vdss:-50V,Id(cont):-18A,Rds(on):0.14Ω)(P沟道MOS晶体Vdss:-50V,Id(cont):-18A,Rds(on):0.14Ω))
Semelab(Magnatec)
TT electronics Semelab Limited
Seme LAB
KSC5302DM High Voltage & High Speed Power Switch Application 2 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-126
High Voltage & High Speed Power Switch Application
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
KA5M0165 KA5L0165R KA5L0165RN KA5L0165RTU KA5L0165    Fairchild Power Switch(FPS)
1A/650V 50KHz Power Switch
1A/650V 70KHz Power Switch
1A/650V 100KHz Power Switch
IC,SMPS CONTROLLER,CURRENT-MODE,BIPOLAR/MOS,DIP,8PIN,PLASTIC
Fairchild Power Switch(FPS) 4 A SWITCHING REGULATOR, 67 kHz SWITCHING FREQ-MAX, PDIP8
Fairchild Power Switch(FPS) 4 A SWITCHING REGULATOR, PSFM4
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
Fairchild Semiconductor, Corp.
BTS410H2 BTS410-H2 BTS410-H2E3043STS BTS410-H2E306 Transient Voltage Suppressor Diodes
From old datasheet system
Smart Highside Power Switch (Overload protection Current limitation Short circuit protection Thermal shutdown)
PROFET Smart High Side Power Switch
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Infineon
24C16 ST25C16 ST25C16B1TR ST25C16B3TR ST25C16B5TR MOSFET; Transistor Polarity:Dual P Channel; Drain Source Voltage, Vds:-30V; Continuous Drain Current, Id:-6.4A; Package/Case:PowerPAK 1212-8 16千位串行I2C总线的EEPROM与用户定义的块写保护
16 Kbit Serial I2C Bus EEPROM with User-Defined Block Write Protection 16千位串行I2C总线的EEPROM与用户定义的块写保护
MOSFET, DUAL NN POWERPAKMOSFET, DUAL NN POWERPAK; Transistor type:MOSFET; Transistor polarity:Dual N; Voltage, Vds max:100V; Case style:PowerPak SO-8; Current, Id cont:1.8A; Current, Idm pulse:10A; Power, Pd:1.3W; Resistance, Rds
MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-20V; Continuous Drain Current, Id:-3.6A; On-Resistance, Rds(on):0.065ohm; Rds(on) Test Voltage, Vgs:-4.5V; Package/Case:MICRO FOOT; Leaded Process Compatible:No
MOSFET, DUAL, PP, POWERPAK; Transistor type:MOSFET; Current, Id cont:7A; Resistance, Rds on:0.02R; Voltage, Vgs Rds on measurement:10V; Case style:SO-8 PowerPak; Charge, gate p channel:49nC; Current, Idm pulse:30A; Depth, RoHS Compliant: Yes
(ST2xxx) 16 Kbit Serial I2C Bus EEPROM with User-Defined Block Write Protection
16/8/4/2/1KbitSerialICBusEEPROM
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
 
 Related keyword From Full Text Search System
UAA2016 heatsink UAA2016 wire UAA2016 cost UAA2016 description UAA2016 Dropout
UAA2016 Ic-on-line UAA2016 reference UAA2016 替换表 UAA2016 address UAA2016 Microelectronic
 

 

Price & Availability of UAA2016

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
0.14934086799622