| PART |
Description |
Maker |
| RFH10N50 RFH10N45 |
CAP 1000PF 200V 10% X7R DIP-2 TUBE-PAK S-MIL-PRF-39014/22
10A/ 450V and 500V/ 0.600 Ohm/ N-Channel Power MOSFETs
10A, 450V and 500V, 0.600 Ohm, N-Channel Power MOSFETs 10 A, 450 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218AC
|
HARRIS SEMICONDUCTOR
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| IRC740 |
Power MOSFET(Vdss=400V/ Rds(on)=0.55ohm/ Id=10A)
Power MOSFET(Vdss=400V, Rds(on)=0.55ohm, Id=10A)
400V Single N-Channel HEXFET Power MOSFET in a TO-220 5-Pin (HEXSense) package
|
International Rectifier
|
| ISL9V2040S3ST ISL9V2040D3S04 ISL9V2040D3ST ISL9V20 |
10A, 400V Logic Level, Voltage Clamped, Avalanche Energy Rated, ESD Protected IGBT
EcoSPARKTM 200mJ, 400V, N-Channel Ignition IGBT
|
FAIRCHILD[Fairchild Semiconductor]
|
| DTB12E DTB8F DTB12G DTB16G DTA16G DTB16F DTB8E DTB |
TRIAC|500V V(DRM)|10A I(T)RMS|TO-220 可控硅| 500V五（DRM）的| 10A条口（T）的有效值|20
TRIAC|200V V(DRM)|10A I(T)RMS|TO-220 可控硅| 200伏五（DRM）的| 10A条口（T）的有效值|20
TRIAC|400V V(DRM)|8A I(T)RMS|TO-220 可控硅| 400V五（DRM）的| 8A条口（T）的有效值|20
THYRISTOR MODULE|TRIAC 晶闸管模块|可控
TRIAC|600V V(DRM)|16A I(T)RMS|TO-220
TRIAC|600V V(DRM)|12A I(T)RMS|TO-220
TRIAC|500V V(DRM)|8A I(T)RMS|TO-220
TRIAC|400V V(DRM)|12A I(T)RMS|TO-220
|
Won-Top Electronics Co., Ltd.
ON Semiconductor
|
| IRFY11N50CMA |
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 10A I(D) | TO-257AA 晶体管| MOSFET的| N沟道| 500V五（巴西）直| 10A条（丁）|57AA
HEXFET POWER MOSFET THRU-HOLE (TO-257AA)
500V Single N-Channel Hi-Rel MOSFET in a TO-257AA package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| COM450A COM150A COM250A |
200V Single N-Channel Hi-Rel MOSFET in a TO-254AA package
30V N-Channel PowerTrench MOSFET
100V , 25Amp, N-Channel MOSFET(100V ,25 A，N沟道MOS场效应管)
500V , 10Amp, N-Channel MOSFET(500V ,10A，N沟道MOS场效应管)
500V Single N-Channel Hi-Rel MOSFET in a TO-254AA package
|
Omnirel
International Rectifier
|
| HIRF740 HIRF740F IRF740F |
N-Channel Power MOSFET (400V, 10A)
|
HSMC CORP.
Hi-Sincerity Mocroelectronics
|
| OM6103ST OM6101ST OM6104ST OM6001ST OM6002SR OM600 |
400V Single N-Channel Hi-Rel MOSFET in a TO-257AA package 400V单N沟道高可靠性MOSFET的采用TO - 257AA封装
400V , 5.5Amp, N Channel MOSFET With Zener Gate Protection(400V , 5.5A,N沟道，MOS场效应管(带齐纳门保护
100V , 14 Amp, N Channel MOSFET With Zener Gate Protection(100V , 14A,N沟道，MOS场效应管(带齐纳门保护 100V的，14安培，N沟道MOSFET与齐门保护（100V的，14A条，沟道来说，MOS场效应管（带齐纳门保护）
500V Single N-Channel Hi-Rel MOSFET in a TO-257AA package
100V Single N-Channel Hi-Rel MOSFET in a TO-257AA package
200V Single N-Channel Hi-Rel MOSFET in a D2 package
200V Single N-Channel Hi-Rel MOSFET in a TO-257AA package
100V Single N-Channel Hi-Rel MOSFET in a D2 package
400V Single N-Channel Hi-Rel MOSFET in a D2 package
500V Single N-Channel Hi-Rel MOSFET in a D2 package
POWER MOSFET IN HERMETIC ISOLATED JEDEC TO 257AA PACKAGE
Isolated Hermetic Metal Package
|
International Rectifier, Corp.
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
|
| OM6233SS OM6227SS OM6233SSV OM6231SS OM6232SS OM62 |
1000V Dual N-Channel MOSFET in a S-6D package
500V Dual N-Channel MOSFET in a S-6D package
400V Dual N-Channel MOSFET in a S-6D package
500V Dual N-Channel MOSFET in a S-6E package
1000V Dual N-Channel MOSFET in a S-6E package
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
10 A, 1000 V, 1.3 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET HERMETIC SEALED, S-6D, SIP-6
400V Dual N-Channel MOSFET in a S-6E package 400V双N沟道MOSFET的在一个S - 6E条包
10 A, 1000 V, 1.3 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET HERMETIC SEALED, S-6E, SIP-6
|
International Rectifier
Electronic Theatre Controls, Inc.
Atmel, Corp.
|
| IRF341IRF342 |
10A and 8.3A, 400V and 350V, 0.55 and 0.80 Ohm, N-Channel Power MOSFETs
|
Intersil
|
| STP11NK50Z STP11NK50ZFP |
N-CHANNEL 500V - 0.48 OHM - 10A TO-220/TO-220FP ZENER-PROTECTED SUPERMESH POWER MOSFET
|
ST Microelectronics
|
