PART |
Description |
Maker |
MMDF3200Z |
DUAL TMOS POWER MOSFET 11.5 AMPERES 20 VOLTS
|
MOTOROLA[Motorola, Inc]
|
MMDF3N03HD ON2180 |
From old datasheet system DUAL TMOS POWER MOSFET 4.1 AMPERES 30 VOLTS
|
MOTOROLA[Motorola, Inc]
|
MMDF6N02HD MMDF6N02HD_D ON2197 ON2196 |
DUAL TMOS POWER MOSFET 6.0 AMPERES 20 VOLTS Medium Power Surface Mount Products From old datasheet system
|
Motorola, Inc ON Semi
|
MMDF7N02Z MMDF7N02Z_D ON2201 ON2200 |
DUAL TMOS POWER MOSFET 7.0 AMPERES 20 VOLTS Medium Power Surface Mount Products From old datasheet system
|
Motorola, Inc ON Semi
|
MTDF1P02HD |
DUAL TMOS POWER MOSFET 1.6 AMPERES 20 VOLTS RDS(on) = 175 mOHM
|
Motorola, Inc.
|
MTP3N100E MTP3N100E_D ON2598 3N100E MTP3N100E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate From old datasheet system TMOS POWER FET 3.0 AMPERES 1000 VOLTS RDS(on) = 4.0 OHM 3 A, 1000 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
MOTOROLA[Motorola, Inc] Motorola, Inc. ON SEMICONDUCTOR
|
MTP4N40E MTP4N40E-D |
TMOS POWER FET 4.0 AMPERES 400 VOLTS RDS(on) = 1.8 OHM 4 A, 400 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
|
Motorola Mobility Holdings, Inc. Motorola, Inc ON Semiconductor
|
EDI8F3265C20MZC EDI8F3265C20MMC |
High Speed, Dual Channel Power MOSFET Drivers; Temperature Range: -40°C to 85°C; Package: 8-SOIC T&R X32号的SRAM模块
|
TE Connectivity, Ltd.
|
MMDF2N06V |
DUAL TMOS MOSFET 3.3 AMPERES 60 VOLTS
|
MOTOROLA[Motorola, Inc]
|
MMSF10N03Z MMSF10N03Z_D ON2249 |
SINGLE TMOS POWER MOSFET 10 AMPERES 30 VOLTS 10000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET From old datasheet system Medium Power Surface Mount Products
|
Motorola Mobility Holdings, Inc. ON Semi MOTOROLA[Motorola, Inc]
|
MMSF10N02Z ON2248 MMSF10N02ZR2 ON2247 |
From old datasheet system SINGLE TMOS POWER MOSFET 10 AMPERES 20 VOLTS 10000 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
MOTOROLA[Motorola, Inc] Motorola Mobility Holdings, Inc.
|
MTP16N25E MTP16N25E_D ON2556 MTP16N25E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 16 AMPERES 250 VOLTS RDS(on) = 0.25 OHM From old datasheet system
|
ON Semiconductor MOTOROLA[Motorola, Inc]
|