| PART |
Description |
Maker |
| MTE108CL |
INFRAED EMITTER
|
Marktech Optoelectronics
MARKTECH[Marktech Corporate]
|
| TLN117B TLN117 TLN117C TLN117A |
TOSHIBA INFRARED LED GAAS INFRAED EMITTER 东芝红外发光二极管公认审INFRAED发射
|
Toshiba, Corp.
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| KS9802 |
INFRAED REMOCON RECEIVER
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| 20-1B12IPA008SC-L239C09 20-PB12IPA008SC-L239C09Y |
Open Emitter or Emitter Shunt
|
Vincotech
|
| CM150DUS-12F |
IGBT Module; Continuous Collector Current, Ic:150A; Collector Emitter Saturation Voltage, Vce(sat):2V; Power Dissipation, Pd:520W; Collector Emitter Voltage, Vceo:600V 150 A, 600 V, N-CHANNEL IGBT
|
Powerex, Inc.
|
| LXHL-PR09 LXHL-DW09 DS45 LXHL-DL09 LXHL-PB09 LXHL- |
power light source LUXEON? III Emitter
power light source LUXEON垄莽 III Emitter
power light source LUXEON㈢ III Emitter
|
Lumileds Lighting Company
|
| Q62703-Q1090 SFH483E7800 SFH483 |
GaAlAs-IR-Lumineszenzdiode GaAlAs Infrared Emitter 1 ELEMENT, INFRARED LED, 880 nm
GaAlAs-IR-Lumineszenzdiode GaAlAs Infrared Emitter 发动器，红外Lumineszenzdiode GaAlA红外发射
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| OL3450L-A-SFMUJ-S2 OL4451L-B-AFMUJ-S1 OL5451L-B-AF |
FIBER OPTIC LASER DIODE MODULE EMITTER, 1300-1320nm, PANEL MOUNT, THROUGH HOLE MOUNT, MU-J CONNECTOR
FIBER OPTIC LASER DIODE MODULE EMITTER, 1480-1500nm, PANEL MOUNT, THROUGH HOLE MOUNT, MU-J CONNECTOR
FIBER OPTIC LASER DIODE MODULE EMITTER, 1510-1530nm, PANEL MOUNT, THROUGH HOLE MOUNT, MU-J CONNECTOR
FIBER OPTIC LASER DIODE MODULE EMITTER, 1620-1640nm, PANEL MOUNT, THROUGH HOLE MOUNT, MU-J CONNECTOR
|
LAPIS SEMICONDUCTOR CO LTD
|
| 1935R-A-1291-SA-05-B 1935R-A-1271-SA-05-B 1935R-A- |
FIBER OPTIC DFB LASER DIODE EMITTER, 1287-1295nm, SC/APC CONNECTOR
FIBER OPTIC DFB LASER DIODE EMITTER, 1267-1275nm, SC/APC CONNECTOR
FIBER OPTIC DFB LASER DIODE EMITTER, 1307-1315nm, SC/APC CONNECTOR
FIBER OPTIC DFB LASER DIODE EMITTER, 1287-1295nm, FC/APC CONNECTOR
|
EMCORE CORP
|
| STC04IE170HV |
Emitter switched bipolar transistor ESBT? 1700V - 4A - 0.17 W
Emitter switched bipolar transistor ESBT㈢ 1700V - 4A - 0.17 W
|
STMicroelectronics
|
| SFH420 SFH425 Q62702-P0330 Q62702-P1690 |
Mica Film Capacitor; Capacitance:33pF; Capacitance Tolerance: /- 5 %; Working Voltage, DC:300V
GaAs-IR-Lumineszenzdiode 0.5 in SMT-Gehuse GaAs Infrared Emitter in SMT Package
GaAs-IR-Lumineszenzdiode in SMT-Gehause GaAs Infrared Emitter in SMT Package
From old datasheet system
|
Siemens Semiconductor G...
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
