PART |
Description |
Maker |
PTB20188 |
4 Watts P-Sync, 470-860 MHz UHF TV Linear Power Transistor
|
ERICSSON[Ericsson]
|
PTB20190 |
175 Watts, 470-806 MHz Digital Television Power Transistor
|
ERICSSON[Ericsson]
|
PTB20101 |
175 Watts P-Sync, 470-860 MHz UHF TV Power Transistor
|
ERICSSON[Ericsson]
|
PTB20005 |
15 Watts 860-900 MHz Cellular Radio RF Power Transistor 15 Watts, 860-900 MHz Cellular Radio RF Power Transistor 15 Watts/ 860-900 MHz Cellular Radio RF Power Transistor
|
Ericsson Microelectronics ERICSSON[Ericsson]
|
PTB20195 |
150 Watts, 860-900 MHz Cellular Radio RF Power Transistor
|
ERICSSON[Ericsson]
|
PTF10100 |
165 Watts/ 860-900 MHz LDMOS Field Effect Transistor 165 Watts 860-900 MHz LDMOS Field Effect Transistor 165 Watts, 860-900 MHz LDMOS Field Effect Transistor
|
ERICSSON[Ericsson]
|
SPI900GCM |
900 Watts ATX12V& EPS12V Switching Power Supply
|
Sparkle Power Inc.
|
MJE1320 ON2011 |
SEMICONDUCTOR TECHNICAL DATA From old datasheet system POWER TRANSISTOR 2 AMPERES 900 VOLTS 80 WATTS
|
ONSEMI[ON Semiconductor] MOTOROLA[Motorola, Inc]
|
BGD902 BGD902112 |
860 MHz, 18.5 dB gain power doubler amplifier 40 MHz - 900 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER
|
NXP Semiconductors
|
ZA2CS-10-20W |
High Power Combiner 2 Way-0 50楼? 900 to 1000 MHz High Power Combiner 2 Way-0 50Ω 900 to 1000 MHz
|
Mini-Circuits
|
MRF374A |
MRF374A 470-860 MHz, 130 W, 32 V Lateral N-Channel Broadband RF Power MOSFET RF POWER FIELD EFFECT TRANSISTOR
|
Motorola, Inc Motorola Inc
|
MRF377MRF377R3MRF377R5 |
470–860 MHz, 240 W, 32 V Lateral N–Channel RF Power MOSFET
|
Motorola
|