PART |
Description |
Maker |
MRF377MRF377R3MRF377R5 |
470–860 MHz, 240 W, 32 V Lateral N–Channel RF Power MOSFET
|
Motorola
|
PTB20081 |
150 Watts, 470-860 MHz UHF TV Power Transistor
|
ERICSSON[Ericsson]
|
PTB20091 |
30 Watts, 470-860 MHz UHF TV Linear Power Transistor
|
ERICSSON[Ericsson]
|
MRF372 |
MRF372 470-860 MHz, 180 W, 32 V Lateral N-Channel RF Power MOSFET
|
Motorola
|
PTB20101 |
175 Watts P-Sync, 470-860 MHz UHF TV Power Transistor
|
ERICSSON[Ericsson]
|
BGD902MI BGD902 |
CATV amplifier modules 40 MHz - 900 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER 860 MHz, 18.5 dB gain power doubler amplifier
|
NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
|
BGD906MI BGD906 |
860 MHz, 21.5 dB gain power doubler amplifier
|
Philips
|
BGD904 BGD904MI |
860 MHz, 20 dB gain power doubler amplifier
|
NXP Semiconductors
|
M68732SHA 68732SHA |
RF POWER MODULE SILICON MOS FET POWER AMPLIFIER, 470-520 MHz 6.7W FM PORTABLE SILICON MOS FET POWER AMPLIFIER, 470-520MHz, 6.7W, FM PORTABLE SILICON MOS FET POWER AMPLIFIER, 470-520MHZ 6.7W FM PORTABLE From old datasheet system
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
PTB20005 |
15 Watts 860-900 MHz Cellular Radio RF Power Transistor 15 Watts, 860-900 MHz Cellular Radio RF Power Transistor 15 Watts/ 860-900 MHz Cellular Radio RF Power Transistor
|
Ericsson Microelectronics ERICSSON[Ericsson]
|
CGD914MI CGD914 CGD914_MI_6 CGD914-2015 |
860 MHz, 20 dB gain power doubler amplifier From old datasheet system
|
Quanzhou Jinmei Electro... Philips
|