PART |
Description |
Maker |
BFP520 Q62702-F1794 Q62702-F1491 |
NPN Silicon RF Transistor )For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA) NPN Silicon RF Transistor (For highest gain low noise amplifier at 1.8 GHz and 2 mA / 2 V)
|
SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
|
TSDF2020W |
25-GHz NPN RF transistors
very high power gain;
Very low-noise; 25 GHz Silicon NPN Planar RF Transistor
|
Vishay Intertechnology,Inc. VISAY[Vishay Siliconix]
|
ATF-10236 ATF-10236-STR ATF-10236-TR1 ATF10236 |
ER 2C 2#16S PIN RECP BOX 0.5?12 GHz Low Noise Gallium Arsenide FET 0.5-12 GHz Low Noise Gallium Arsenide FET 0.512 GHz Low Noise Gallium Arsenide FET
|
HP[Agilent(Hewlett-Packard)] Agilent (Hewlett-Packard)
|
AT-41410 |
Up to 6 GHz Low Noise Silicon Bipolar Transistor
|
Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
|
AT-41486 AT-41486-BLK AT-41486-TR1 AT41486 |
Up to 6 GHz Low Noise Silicon Bipolar Transistor
|
Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
|
PHT41470B |
Up to 6 GHz Low Noise Silicon Bipolar Transistor
|
Teledyne Technologies I...
|
AT-41470 |
Up to 6 GHz Low Noise Silicon Bipolar Transistor
|
Agilent(Hewlett-Packard...
|
AT-41485 |
Up to 6 GHz Low Noise Silicon Bipolar Transistor
|
Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
|
AT-41485 |
Up to 6 GHz Low Noise Silicon Bipolar Transistor
|
Agilent(Hewlett-Packard...
|
BAT15-098 Q62702-A0062 BAT15_98 |
From old datasheet system Silicon Schottky Diode (DBS mixer application to 10 GHz Low noise figure Low barrier type) 硅肖特基二极管(星展混合器的应用10 GHz低噪声系数低屏障型)
|
Siemens Semiconductor G... SIEMENS[Siemens Semiconductor Group] SIEMENS AG
|
TMT-4-0503 |
Temperature Compensated Low Noise Amplifier 0.5 GHz - 4 GHz
|
TELEDYNE[Teledyne Technologies Incorporated]
|