PART |
Description |
Maker |
VII125-12G4 |
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1.2KV V(BR)CES | 125A I(C) 晶体管| IGBT功率模块|半桥| 1.2KV五(巴西)国际消费电子展| 125A条一(c
|
IXYS, Corp.
|
CM50DY28 |
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1.4KV V(BR)CES | 50A I(C) 晶体管| IGBT功率模块|半桥| 1.4KV五(巴西)国际消费电子展| 50A条一(c
|
Mitsubishi Electric, Corp.
|
CM200DY24E |
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1.2KV V(BR)CES | 200A I(C) 晶体管| IGBT功率模块|半桥| 1.2KV五(巴西)国际消费电子展| 200安培我(丙)
|
Vishay Intertechnology, Inc.
|
DIM250PHM33-TS000-15 |
Half Bridge IGBT Module
|
Dynex Semiconductor
|
SIM200D12SV3 |
HALF-BRIDGE IGBT MODULE
|
SemiWell Semiconductor
|
DIM200PHM33-F00011 |
Half Bridge IGBT Module
|
Dynex Semiconductor
|
DIM100PHM33-F000 DIM100PHM33-F000-15 |
Half Bridge IGBT Module
|
Dynex Semiconductor
|
DIM400PHM17-A000 |
Half Bridge IGBT Module
|
Dynex Semiconductor
|
BSM300GA170DN2E3166 300A17E2 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Enlarged diode area) From old datasheet system
|
Siemens Semiconductor Group Infineon
|
GA400TD60U |
600V UltraFast 10-30 kHz Half-Bridge IGBT in a Dual INT-A-Pak package HALF-BRIDGE IGBT DUAL INT-A-PAK Ultra-FastTM Speed IGBT
|
IRF[International Rectifier]
|
BSM100GB170DN2 100B17N2 C67070-A2703-A67 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) From old datasheet system
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
GA200HS60S |
600V DC-1 kHz (Standard) Half-Bridge IGBT in a INT-A-Pak package 600V的直千赫的廉政(标准)半桥IGBT à - Pak封装 HALF-BRIDGE IGBT INT-A-PAK
|
Ecliptek, Corp. IRF[International Rectifier]
|