| PART |
Description |
Maker |
| CXK5864BM-10L CXK5864B CXK5864BP-10L CXK5864BP-12L |
Series 400B sealed SMT sub-miniature rocker switch with variety of switching functions
8,192-WORD X 8-BIT HIGH SPEED CMOS STATIC RAM
8192-WORD X 8-BIT HIGH SPEED CMOS STATIC RAM
8,192字8位高速CMOS静态RAM
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http://
SONY[Sony Corporation]
|
| K6X4016C3F-TQ55 K6X4016C3F-TF55 K6X4016C3F K6X4016 |
256Kx16 bit Low Power full CMOS Static RAM 256Kx16位充分的CMOS低功耗静态存储器
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Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| MX26LV400TXBC-55G MX26LV400BXBC-70G MX26LV400TXBC- |
4M-BIT [512Kx8/256Kx16] CMOS SINGLE VOLTAGE 3V ONLY BOOT SECTOR HIGH SPEED eLiteFlashTM MEMORY 256K X 16 FLASH 3V PROM, 55 ns, PDSO48
|
MACRONIX INTERNATIONAL CO LTD
Macronix International Co., Ltd.
http://
|
| KM23C4200D |
4M-Bit (256Kx16) CMOS Mask ROM (EPROM Type)(4M(256Kx16) CMOS掩膜ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| P4C116-12JM P4C116-10JM P4C116-10JMB P4C116-20L28M |
ULTRA HIGH SPEED 2K x 8 STATIC CMOS RAMS 2K X 8 STANDARD SRAM, 35 ns, PDIP24
ULTRA HIGH SPEED 2K x 8 STATIC CMOS RAMS 2K X 8 STANDARD SRAM, 25 ns, QCC28
ULTRA HIGH SPEED 2K x 8 STATIC CMOS RAMS 超高K × 8静态CMOS五羊
ULTRA HIGH SPEED 2K x 8 STATIC CMOS RAMS 2K X 8 STANDARD SRAM, 35 ns, QCC28
ULTRA HIGH SPEED 2K x 8 STATIC CMOS RAMS 2K X 8 STANDARD SRAM, 20 ns, CDIP24
ULTRA HIGH SPEED 2K x 8 STATIC CMOS RAMS 2K X 8 STANDARD SRAM, 25 ns, PDSO24
ULTRA HIGH SPEED 2K x 8 STATIC CMOS RAMS 2K X 8 STANDARD SRAM, 25 ns, CDIP24
ULTRA HIGH SPEED 2K x 8 STATIC CMOS RAMS 2K X 8 STANDARD SRAM, 20 ns, PDIP24
ULTRA HIGH SPEED 2K x 8 STATIC CMOS RAMS 2K X 8 STANDARD SRAM, 15 ns, PDFP24
ULTRA HIGH SPEED 2K x 8 STATIC CMOS RAMS 2K X 8 STANDARD SRAM, 35 ns, PDSO24
ULTRA HIGH SPEED 2K x 8 STATIC CMOS RAMS 2K X 8 STANDARD SRAM, 15 ns, QCC32
|
Pyramid Semiconductor Corporation
Pyramid Semiconductor, Corp.
|
| K6X4016T3F K6X4016T3F-TQ85 K6X4016T3F-B K6X4016T3F |
256Kx16 bit Low Power and Low Voltage CMOS Static RAM 256Kx16位低功耗和低电压的CMOS静态RAM
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| W26020A W26020A-20 W26020A-25 W26020AT-20 W26020AT |
128K X 16 High Speed CMOS Static RAM
128K x 16 HIGH-SPEED CMOS STATIC RAM
From old datasheet system
128K×16bit High-Speed CMOS Static RAM(128K×16位高速CMOS静态RAM) 128K的16位高速CMOS静态RAM28K的16位高速的CMOS静态RAM）的
128K X 16 High Speed CMOS Static RAM 128K的16高速CMOS静态RAM
|
WINBOND[Winbond]
Winbond Electronics Corp
Winbond Electronics, Corp.
|
| IS62C1024-35Q IS62C1024-35QI IS62C1024 16_62C1024 |
70ns; 5V; 128K x 8 high-speed CMOS static RAM
Micro LED; LED Color:Red Orange; Luminous Intensity:80ucd; Viewing Angle:140 ; Forward Voltage:2.2V; Color:Red/Orange; Package/Case:1210; Reel Quantity:3000; Wavelength:630nm RoHS Compliant: Yes 128K的8高速CMOS静态RAM
128K x 8 HIGH-SPEED CMOS STATIC RAM 128K的8高速CMOS静态RAM
From old datasheet system
ASYNCHRONOUS STATIC RAM
128K x 8 HIGH-SPEED CMOS STATIC RAM
|
Advanced Interconnections, Corp.
SIEMENS AG
Integrated Silicon Solution, Inc.
ICSI[Integrated Circuit Solution Inc]
Integrated Circuit Solu...
|
| IC61C1024L IC61C1024 IC61C1024L-12HI IC61C1024L-15 |
128K x 8 HIGH-SPEED CMOS STATIC RAM 128K的8高速CMOS静态RAM
GT 12C 12#12 PIN RECP WALL RM 128K的8高速CMOS静态RAM
RES CH 68.1 EW 1%
ASYNCHRONOUS STATIC RAM, High Speed A.SRAM
|
Electronic Theatre Controls, Inc.
ICSI
Integrated Circuit Solution Inc
|
| K6R4016C1D K6R4016C1D-JC K6R4016V1D-JC K6R4004C1D |
1Mx4 Bit High Speed Static RAM(3.3V Operating). Operated at Commercial and Industrial Temperature Ranges 1Mx4位高速静态RAM3.3V的）。在商用和工业温度范围运
1Mx4 Bit High Speed Static RAM(3.3V Operating). Operated at Commercial and Industrial Temperature Ranges 1Mx4位高速静态RAM.3V的）。在商用和工业温度范围运
861 SOLID STATE RELAYS RoHS Compliant: Yes
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
