PART |
Description |
Maker |
M28R400C-ZBT M28R400CTB120ZB1T M28R400CTB120ZB6T M |
4 Mbit (256Kb x16/ Boot Block) 1.8V Supply Flash Memory 4 Mbit (256Kb x16, Boot Block) 1.8V Supply Flash Memory 4兆位56Kb的x16插槽,引导块.8V电源快闪记忆
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ST Microelectronics 意法半导 STMicroelectronics N.V. SGS Thomson Microelectronics
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M29W400DT M29W400DT45M1E M29W400DT45M1F M29W400DT4 |
4 Mbit (512Kb x8 or 256Kb x16 Boot Block) 3V Supply Flash Memory 4 Mbit (512Kb x8 or 256Kb x16 / Boot Block) 3V Supply Flash Memory 4 Mbit (512Kb x8 or 256Kb x16, Boot Block) 3V Supply Flash Memory 4兆位12KB的x856Kb的x16插槽,引导块V电源快闪记忆
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STMICROELECTRONICS[STMicroelectronics] ST Microelectronics 意法半导 STMicroelectronics N.V.
|
M27V400 M27V400-100B1TR M27V400-100B6TR M27V400-10 |
NND - 4 MBIT (512KB X8 OR 256KB X16) UV EPROM AND OTP EPROM 4 Mbit 512Kb x8 or 256Kb x16 UV EPROM and OTP EPROM 4兆位512KB的x856Kb的x16紫外线存储器和OTP存储
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SGS Thomson Microelectronics STMicroelectronics N.V. 意法半导 ST Microelectronics
|
M27W400 M27W400-100B6TR M27W400-100F6TR M27W400-10 |
4 Mbit (512Kb x8 or 256Kb x16), Low Voltage UV EPROM and OTP EPROM 512K X 8 UVPROM, 100 ns, CDIP40 4 Mbit 512Kb x8 or 256Kb x16 Low Voltage UV EPROM and OTP EPROM 4兆位512KB的x856Kb的x16低压紫外线可擦写可编程只读存储器和OTP存储 256 Kbit 32Kb x 8 Low Voltage UV EPROM and OTP EPROM
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SGS Thomson Microelectronics STMicroelectronics N.V. 意法半导 STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
|
CY14B104NA-ZSP20XCT CY14B104NA-ZSP20XIT CY14B104LA |
4 Mbit (512K x 8/256K x 16) nvSRAM; Organization: 256Kb x 16; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: TSOP 256K X 16 NON-VOLATILE SRAM, 20 ns, PDSO54 4 Mbit (512K x 8/256K x 16) nvSRAM; Organization: 512Kb x 8; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: FBGA 4 Mbit (512K x 8/256K x 16) nvSRAM; Organization: 256Kb x 16; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: FBGA
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Cypress Semiconductor, Corp. CYPRESS SEMICONDUCTOR CORP
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M27W201-80K6TR M27W201-200NZ6TR M27W201-80NZ6TR M2 |
2 MBIT (256KB X8) LOW VOLTAGE OTP EPROM Test Spring Probe; Current Rating:3A; Leaded Process Compatible:Yes; Length:0.060"; Peak Reflow Compatible (260 C):No; Tip/Nozzle Style:90 Concave RoHS Compliant: Yes 2兆位56Kb × 8低压紫外线可擦写可编程只读存储器和OTP存储 Triple 3-Input Positive-AND Gates 14-SO 0 to 70 Dual J-K Positive-Edge-Triggered Flip-Flops With Clear And Preset 16-SO 0 to 70 Triple 3-Input Positive-AND Gates 14-PDIP 0 to 70 Triple 3-Input Positive-AND Gates 14-SOIC 0 to 70 Dual J-K Positive-Edge-Triggered Flip-Flops With Clear And Preset 16-SOIC 0 to 70 Dual J-K Positive-Edge-Triggered Flip-Flops With Clear And Preset 16-PDIP 0 to 70 2 Mbit 256Kb x 8 Low Voltage UV EPROM and OTP EPROM 2 MBIT (256KB X8) LOW VOLTAGE OTP EPROM
|
STMicroelectronics N.V. 意法半导 STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
|
M36W432TG-ZAT M36W432BGZA M36W432BG70ZA6T M36W432B |
32 Mbit 2Mb x16, Boot Block Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product 32 MBIT (2MB X16, BOOT BLOCK) FLASH MEMORY AND 4 MBIT (256KB X16) SRAM, MULTIPLE MEMORY PRODUCT
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ST Microelectronics
|
M29W400DT45N1 M29W400DT45N6E M29W400DT55M1 M29W400 |
4 MBIT (512KB X8 OR 256KB X16, BOOT BLOCK) 3V SUPPLY FLASH MEMORY
|
ST Microelectronics
|
M29W400BB90N6T M29W400BB90M1T M29W400BB55N1T |
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory 4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory 4兆位512KB的x856Kb的x16插槽,引导块低压单电源闪
|
STMicroelectronics N.V.
|
M29W200BT90N6T M29W200BB120M1 M29W200BB120M1E M29W |
2 Mbit (256Kb x8 or 128Kb x16, Boot Block) Low Voltage Single Supply Flash Memory
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STMICROELECTRONICS[STMicroelectronics]
|
M29W200 M29W200BB M29W200BB120M1T M29W200BB120M6T |
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Low Voltage Single Supply Flash Memory
|
ST Microelectronics STMicroelectronics
|