| PART |
Description |
Maker |
| MT3370BS1 MT3370/BN1 |
Wide Dynamic Range DTMF Receiver
SWITCH, SPDT, CTR OFF LOCKING; Thread size:1/4 x 40UNS; Switch function type:SPDT On-Off-On; Current, contact @ contact voltage AC max:3A; Current, contact @ contact voltage DC max:8A; Material, contact:Silver; Resistance, RoHS Compliant: Yes
|
Zarlink Semiconductor Inc.
|
| SW-106PIN SW-276PIN SW-106SW-276 |
High Power GaAs SPDT Switch DC - 3 GHz
SX Series Subminiature Basic Switch, Single Pole Double Throw (SPDT), 250 Vac, 3 A, Pin Plunger Actuator, Solder Termination
High Power GaAs SPDT Switch DC3 GHz
Schottky Barrier Diodes
|
Tyco Electronics
|
| PE4230 PE4230-EK 4230-52 4230 4230-00 4230-21 4230 |
SPDT High Power UltraCMOSRF Switch
SPDT High Power UltraCMOS RF Switch
SPDT High Power UltraCMOS⑩ RF Switch
|
PEREGRINE[Peregrine Semiconductor Corp.]
|
| DG186 DG187 DG188 DG187AP/883 DG187AA/883 DG188AA/ |
SPDT Analog Switch SPDT模拟开
High-Speed Drivers with SPDT JFET Switches
Hi-Speed Drvrs w/SPDT JFET Switches
|
Intersil, Corp.
Vishay Intertechnology, Inc.
VISAY[Vishay Siliconix]
|
| SCPHN20 SCPHN26 SCPHN10 SCPHN16 SCPHN30 SCPHN6 |
High Voltage,High Current,High Density Standard Recovery Rectifier(????靛?16000V锛?俯搴?5???骞冲??存??垫?5.5A,楂??锛?ぇ?垫?,楂??搴??????㈠??存???
5.5 A, 16000 V, SILICON, RECTIFIER DIODE
High Voltage,High Current,High Density Standard Recovery Rectifier(反向电压6000V，温5℃时平均整流电流5.5A,高压，大电流,高密度，标准恢复整流
STANDARD RECOVERY HIGH VOLTAGE, HIGH CURRENT RECTIFIER
|
Semtech Corporation
|
| BCP68-10 BCP68-16 Q62702-C2126 Q62702-C2128 Q62702 |
From old datasheet system
NPN Silicon AF Transistor (For general AF application High collector current High current gain)
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| Q62702-C2134 BCP28 BCP48 Q62702-C2135 |
PNP Silicon Darlington Transistors (For general AF applications High collector current High current gain)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| SR104-T SR104-B |
HIGH CURRENT SCHOTTKY BARRIER RECTIFIER
High Current Capability and Low Forward Drop
|
Diodes Incorporated
|
| AS185-92 |
ECONOLINE: REC3-S_DRW(Z)/H* - 3W DIP Package- 1kVDC Isolation- Wide Input 2:1 & 4:1- Regulated Output- 100% Burned In- UL94V-0 Package Material- Continuous Short Circiut Protection- Efficiency to 80%
PHEMT GaAs IC High Linearity Positive Control SPDT Switch DC-2 GHz
PHEMT GaAs IC High Linearity Positive Control SPDT Switch DC GHz
|
Alpha Industries, Inc.
Alpha Industries Inc
|
| BDP951 BDP955 BDP953 Q62702-D1343 Q62702-D1339 Q62 |
NPN Silicon AF Power Transistors (For AF drivers and output stages High collector current High current gain) NPN硅自动对焦功率晶体管输出级驱动器和高集电极电流高电流增益（为自动
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| K6R4016C1D-JC10 K6R4008V1D-TI10 K6R4008V1D-UI10 K6 |
256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. 256Kx16位高速静态RAM.0V操作）。在经营商业和工业温度范围
256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. 256Kx16位高速静RAM.0V操作）。在经营商业和工业温度范围
CAP,ELECTRO,1000UF,25V
DIODE,RECT,1A 400V SMD MELF
PCB Relay; Contacts:SPDT; Coil Voltage AC Max:120V; Contact Carry Current:30A; Coil Resistance:3000ohm; Mounting Type:PCB; Relay Terminals:Quick Connect; Relay Mounting:PC Board; Contact Rating:30A; Switch Function:SPDT
Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 470uF; Voltage: 63V; Case Size: 12.5x20 mm; Packaging: Bulk
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
