| PART |
Description |
Maker |
| K6R1008C1C- K6R1008C1C-C10 K6R1008C1C-C12 K6R1008C |
128K x 8 high speed static RAM, 5V operating, 12ns
128Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges. 128Kx8位高速CMOS静态RAMV的工作）。在经营商业和工业温度范围
RES-140 0.0625W 1% THICK FILM
128K x 8 high speed static RAM, 5V operating, 15ns
128K x 8 high speed static RAM, 5V operating, 10ns
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| K6R1008C1A- K6R1008C1A-C12 K6R1008C1A-C15 K6R1008C |
128K x 8 high speed static RAM, 5V operating, 12ns
128Kx8 High Speed Static RAM5V Operating, Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges. 128Kx8高速静态内存（5V工作），旋转引脚输出。在商用和工业温度范围操
128Kx8 High Speed Static RAM5V Operating/ Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges.
128K x 8 high speed static RAM, 5V operating, 20ns
128K x 8 high speed static RAM, 5V operating, 15ns
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| W24010A |
128K×8 High-Speed CMOS Static RAM(128K×8位高速CMOS静态RAM) 8 × 128K的高速CMOS静态RAM28K的8位高速的CMOS静态RAM）的
|
Winbond Electronics, Corp.
|
| CXK77B1841AGB CXK77B3641AGB |
4Mb Late Write LVTTL High Speed Synchronous SRAM (128K x 36Bit)(4M位、写延迟LVTTL高速同步静态RAM (128K x 36) 4Mb的后写入LVTTL高速同步SRAM28K的x 36Bit）（4分位，写延迟LVTTL高速同步静态随机存储器28K的36位）
4Mb Late Write LVTTL High Speed Synchronous SRAMs (128K x 36Bit)(4M位、写延迟、高速逻辑收发（HSTL）、高速同步静态RAM (128K x 36) 4Mb的后写入LVTTL高速（128K的x 36Bit）（4分位，写延迟，高速逻辑收发（HSTL），高速同步静态随机存储器28K的36位）同步静态存储器
|
Sony, Corp.
|
| A63G7332 A63G7332E-42 A63G7332E-45 A63G7332E-5 A63 |
128K X 32 Bit Synchronous High Speed SRAM with Burst Counter and Pipelined Data Output 128K的32位同步高的Burst计数器和流水线数据输出高速SRAM
4.2ns 128K x 32bit synchronous high speed SRAM
4.2ns; 128K x 32bit synchronous high speed SRAM with burst counter and pipelined data output
4.5ns 128K x 32bit synchronous high speed SRAM
4.5ns; 128K x 32bit synchronous high speed SRAM with burst counter and pipelined data output
|
AMIC Technology, Corp.
AMIC Technology Corporation
|
| IS61LV12816 IS61LV12816-10B IS61LV12816-10BI IS61L |
128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY 128K X 16 STANDARD SRAM, 10 ns, PBGA48
128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY 128K X 16 STANDARD SRAM, 10 ns, PDSO44
128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY 128K X 16 STANDARD SRAM, 15 ns, PDSO44
128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY 128K X 16 STANDARD SRAM, 15 ns, PBGA48
128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY 128K X 16 STANDARD SRAM, 12 ns, PDSO44
128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY 128K X 16 STANDARD SRAM, 15 ns, PQFP44
128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY 128K X 16 STANDARD SRAM, 10 ns, PQFP44
128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY 128K X 16 STANDARD SRAM, 12 ns, PQFP44
|
Integrated Silicon Solution, Inc.
ISSI[Integrated Silicon Solution Inc]
Integrated Circuit Solution Inc
ISSI[Integrated Silicon Solution, Inc]
|
| AT28C010E-12JC AT28C010E-12PC AT28C010E-12TI AT28C |
1 Megabit 128K x 8 Paged CMOS E2PROM
Quadruple Bilateral Analog Switch 14-SOIC -40 to 85
High Speed CMOS Logic Triple 3-Input OR Gates 14-TSSOP -55 to 125 128K X 8 EEPROM 5V, 150 ns, PDIP32
Quadruple Bilateral Analog Switch 14-TSSOP -40 to 85 128K X 8 EEPROM 5V, 150 ns, PQCC32
High Speed CMOS Logic Triple 3-Input OR Gates 14-TSSOP -55 to 125 128K X 8 EEPROM 5V, 150 ns, PQCC32
64K 8K x 8 Battery-Voltage CMOS E2PROM 128K X 8 EEPROM 5V, 200 ns, PDSO32
High Speed CMOS Logic Triple 3-Input OR Gates 14-TSSOP -55 to 125 128K X 8 EEPROM 5V, 120 ns, PDIP32
Quadruple Bilateral Analog Switch 14-SSOP -40 to 85 128K X 8 EEPROM 5V, 150 ns, PDSO32
|
Atmel Corp.
Atmel, Corp.
|
| EDI8L32128C12AI EDI8L32128C15AI EDI8L32128C20AI ED |
15ns; 5V power supply; 128K x 32 CMOS high speed static RAM
20ns; 5V power supply; 128K x 32 CMOS high speed static RAM
17ns; 5V power supply; 128K x 32 CMOS high speed static RAM
|
White Electronic Designs
|
| A63L73321E-10 A63L73321E-9.5 |
10ns 128K x 32bit synchronous high speed SRAM
9.5ns 128K x 32bit synchronous high speed SRAM
|
AMIC Technology
|
| AS7C31025 AS7C31025-12JC AS7C31025-12JI AS7C31025- |
Parallel-Load 8-Bit Shift Registers 16-SSOP -40 to 85
High Speed CMOS Logic Quad 2-Input AND Gates 14-SOIC -55 to 125
5V/3.3V 128K x8 CMOS SRAM (Revolutionary pinout) 128K X 8 STANDARD SRAM, 15 ns, PDSO32
5V/3.3V 128K x8 CMOS SRAM (Revolutionary pinout) 128K X 8 STANDARD SRAM, 12 ns, PDSO32
|
ALLIANCE MEMORY INC
ALSC[Alliance Semiconductor Corporation]
ETC[ETC]
Alliance Semiconductor, Corp.
|
| W241024A W241024AJ- W241024AI-12 W241024AQ-20 W241 |
128L X 8 HIGH SPEED CMOS STATIC RAM 128K X 8 STANDARD SRAM, 15 ns, PDSO32
128L X 8 HIGH SPEED CMOS STATIC RAM 128K X 8 STANDARD SRAM, 20 ns, PDSO32
From old datasheet system
128*8HIGH SPEED COMOS STATIC RAM
|
Winbond Electronics, Corp.
Winbond Electronics Corp
WINBOND[Winbond]
|
