| PART |
Description |
Maker |
| AT28HC256-12FM/883 AT28HC256-12LM/883 AT28HC256-12 |
CONNECTOR ACCESSORY 32K X 8 EEPROM 5V, 90 ns, CPGA28
High Speed CMOS Logic 8-Stage Shift-and-Store Bus Register with 3-Stage Outputs 16-TSSOP -55 to 125
256 32K x 8 High Speed Parallel EEPROMs
256 32K x 8 High Speed CMOS E2PROM
|
Atmel, Corp.
Atmel Corp.
ATMEL Corporation
|
| CY7C1020B CY7C1020B-12VC CY7C1020B-12ZC CY7C1020B- |
32K x 16 Static RAM 32K X 16 STANDARD SRAM, 15 ns, PDSO44
Memory : Async SRAMs
|
CYPRESS SEMICONDUCTOR CORP
Cypress Semiconductor, Corp.
CYPRESS[Cypress Semiconductor]
http://
|
| AT28HC256-12JC AT28HC256-12JI AT28HC256-12PC AT28H |
256 (32K x 8) high speed parallel EEPROM, 90ns
256 (32K x 8) high speed parallel EEPROM, 120ns
High Speed CMOS Logic Dual Retriggerable Monostable Multivibrators with Reset 16-PDIP -55 to 125 32K X 8 EEPROM 5V, 120 ns, PDIP28
High Speed CMOS Quad Analog Switches with Level Translation 16-SOIC -55 to 125 32K X 8 EEPROM 5V, 70 ns, PDIP28
High Speed CMOS Logic Dual Retriggerable Monostable Multivibrators with Reset 16-SOIC -55 to 125 32K X 8 EEPROM 5V, 120 ns, PDSO28
256 32K x 8 High Speed Parallel EEPROMs 32K X 8 EEPROM 5V, 90 ns, CDIP28
High Speed CMOS Logic 4-to-16 Line Decoder/Demultiplexer with Input Latches 24-PDIP -55 to 125 32K X 8 EEPROM 5V, 70 ns, PQCC32
High Speed CMOS Logic 4-to-16 Line Decoder/Demultiplexer with Input Latches 24-PDIP -55 to 125 32K X 8 EEPROM 5V, 90 ns, PQCC32
High Speed CMOS Logic 4-to-16 Line Decoder/Demultiplexer with Input Latches 24-SOIC -55 to 125 32K X 8 EEPROM 5V, 70 ns, PDIP28
High Speed CMOS Quad Analog Switches with Level Translation 16-TSSOP -55 to 125 32K X 8 EEPROM 5V, 70 ns, PQCC32
High Speed CMOS Quad Analog Switches with Level Translation 16-TSSOP -55 to 125 32K X 8 EEPROM 5V, 70 ns, PDIP28
REED RELAY, SPST, 24V, ES
256 32K x 8 High Speed CMOS E2PROM
|
Atmel, Corp.
Atmel Corp.
ATMEL[ATMEL Corporation]
|
| IS64WV3216BLL-15BLA3 IS64WV3216BLL-15BA3 IS64WV321 |
32K x 16 HIGH-SPEED CMOS STATIC RAM 32K X 16 STANDARD SRAM, 15 ns, PDSO44
|
Integrated Silicon Solution, Inc.
|
| IS61C256AH IS61C256AH-20N IS61C256AH-12T IS61C256A |
32K x 8 HIGH-SPEED CMOS STATIC RAM 32K X 8 STANDARD SRAM, 25 ns, PDSO28
32K x 8 HIGH-SPEED CMOS STATIC RAM 32K X 8 STANDARD SRAM, 20 ns, PDIP28
32K x 8 HIGH-SPEED CMOS STATIC RAM 32K X 8 STANDARD SRAM, 10 ns, PDIP28
32K x 8 HIGH-SPEED CMOS STATIC RAM 32K X 8 STANDARD SRAM, 12 ns, PDIP28
32K x 8 HIGH-SPEED CMOS STATIC RAM 32K X 8 STANDARD SRAM, 15 ns, PDIP28
|
Integrated Silicon Solution, Inc.
ISSI[Integrated Silicon Solution, Inc]
Integrated Silicon Solution Inc
|
| IS61LV3216L-12K IS61LV3216L-12T IS61LV3216L-12KI I |
32K x 17 Low Voltage High-Speed CMOS Static RAM(3.3V,32K x 16 低压高速CMOS静态RAM)
32K x 16 LOW VOLTAGE CMOS STATIC RAM 32K X 16 STANDARD SRAM, 20 ns, PDSO44
|
Integrated Silicon Solution Inc
ISSI[Integrated Silicon Solution, Inc]
Integrated Silicon Solution, Inc.
|
| IDT7027 IDT7027L IDT7027L20G IDT7027L20GB IDT7027L |
32K x 16 Dual-Port RAM
60V N-Channel PowerTrench MOSFET 32K X 16 DUAL-PORT SRAM, 25 ns, CPGA108
HIGH-SPEED 32K x 16 DUAL-PORT STATIC RAM 32K X 16 DUAL-PORT SRAM, 25 ns, CPGA108
HIGH-SPEED 32K x 16 DUAL-PORT STATIC RAM 高2K的16 DUAL-PORT静态RAM
HIGH-SPEED 32K x 16 DUAL-PORT STATIC RAM 32K X 16 DUAL-PORT SRAM, 20 ns, CPGA108
Dual P-Channel 2.5V Specified PowerTrench MOSFET 高2K的16 DUAL-PORT静态RAM
|
IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
INTEGRATED DEVICE TECHNOLOGY INC
|
| 28C256ASC-1 28C256ASC-2 28C256ASC-3 28C256ASC-4 28 |
High speed 120 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
High speed 150 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
High speed 200 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
High speed 250 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns.
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns.
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns.
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns.
|
Turbo IC
|
| T14L256A03 |
32K X 8 HIGH SPEED CMOS STATIC RAM
|
Taiwan Memory Technology
|
| IS61C256AL-10J IS61C256AL-10T IS61C256AL-10TL IS61 |
32K X 8 HIGH-SPEED CMOS STATIC RAM
|
Integrated Silicon Solution, Inc.
|
| IS61C256AL IS61C256AL-10J IS61C256AL-10JL IS61C256 |
32K X 8 HIGH-SPEED CMOS STATIC RAM
|
ISSI[Integrated Silicon Solution, Inc]
|
