| PART |
Description |
Maker |
| VB525SP VB525SP-E VB525SPTR-E |
High voltage ignition coil driver power integrated circuit
|
STMicroelectronics
ST Microelectronics
|
| NGB18N40CLBT4 |
Ignition IGBT in D2ak (Gen3) with Improved SCIS Energy and Vce(on)
18 Amps, 400 Volts N-Channel D2PAK
|
ON Semiconductor
|
| KGF40N60KDA |
KEC Field Stop Trench IGBTs offer low switching losses, high energy efficiency and short circuit ruggedness.
|
KEC(Korea Electronics)
|
| SFT1002 SFT1004 SFT1012 SFT1010 SFT1014 SFT1016 |
250 V, 100 A high speed NPN transistor
120 V, 100 A high energy NPN transistor
100 V, 100 A high energy NPN transistor
140 V, 100 A high energy NPN transistor
160 V, 100 A high energy NPN transistor
|
Solid State Devices Inc
|
| MC79076DW MCCF79076 MC79076 ON1779 |
From old datasheet system
ELECTRONIC IGNITION CONTROL CIRCUIT
|
MOTOROLA[Motorola, Inc]
ON Semi
|
| HGTP14N40F3VL HGT1S14N40F3VLS |
14A, 380V Logic Level, Voltage Clamped, Avalanche Energy Rated, ESD Protected IGBT
330mJ, 400V, N-Channel Ignition IGBT
72 MACROCELL 5 VOLT ISP CPLD - NOT RECOMMENDED for NEW DESIGN 38 A, 420 V, N-CHANNEL IGBT, TO-220AB
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
Fairchild Semiconductor, Corp.
|
| MTP10N60E7 ON2541 MTP10N60E7-D |
TMOS 7 E-FET™ High Energy Power FET
TMOS 7 E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
From old datasheet system
TMOS POWER FET 10 AMPERES 600 VOLTS
|
ON Semiconductor
|
| BYX134GPL |
HIGH VOLTAGE AUTOMOTIVE IGNITION DIODE
|
EIC discrete Semiconductors
|
| VB927T |
HIGH VOLTAGE IGNITION COIL DRIVER POWER I.C.
|
STMICROELECTRONICS[STMicroelectronics]
|
| VB927T |
HIGH VOLTAGE IGNITION COIL DRIVER POWER IC
|
ST Microelectronics
|
| VB921ZVSP VB921 VB921ZVFI VB921ZVSP13TR |
HIGH VOLTAGE IGNITION COIL DRIVER POWER IC
HIGH VOLTAGE IGNITION COIL DRIVER POWER IC
HIGH VOLTAGE IGNITION COIL DRIVER POWER I.C.
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
