| PART |
Description |
Maker |
| BAS21LT1 |
CASE 318 08, STYLE 8 SOT 23 (TO 236AB)
|
MOTOROLA[Motorola, Inc]
|
| DTC114YE DTC114YE_D ON0281 |
CASE 463-01/ STYLE 1 SOT-416/SC-90
CASE 463-01, STYLE 1 SOT-416/SC-90
CASE 463-1, STYLE 1 SOT-16/SC-0
From old datasheet system
|
Motorola Inc
ON Semi
MOTOROLA[Motorola, Inc]
|
| BAV99WT1 BAV99RWT1 ON0136 BAV99 |
Diodes > JEDEC Standard & Euro Standard Diodes > Surface mounting type
SC-70/SOT-323 Dual Series Switching Diode
BAV99WT1 CASE 419-2, STYLE 9 SC-0/SOT-23
From old datasheet system
|
ROHM
ON Semi
MOTOROLA[Motorola, Inc]
|
| 2N5460 2N5462 ON0061 2N5461 2N5460THRU2N5462 MOTOR |
JFET Amplifier P-Channel
From old datasheet system
CASE 29-4, STYLE 7TO-2 (TO-26AA)
CASE 2904, STYLE 7 TO92 (TO226AA)
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset 5个引amp;#181;带看门狗和手动复位的P监控电路
|
ON Semiconductor
MOTOROLA INC
MOTOROLA[Motorola, Inc]
Motorola, Inc.
Motorola Mobility Holdings, Inc.
|
| 2N7000 |
CASE 29-04, STYLE 22 TO-92 (TO-226AA) 200 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
CASE 29-04/ STYLE 22 TO-92 (TO-226AA)
|
Motorola Mobility Holdings, Inc.
Motorola, Inc.
Motorola Inc
MOTOROLA[Motorola, Inc]
|
| BC308C BC307C BC307B BC307 ON0143 |
Amplifier Transistors(PNP Silicon) 100 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
CASE 29-04, STYLE 17 TO-2 (TO-26AA)
CASE 29-4, STYLE 17 TO-2 (TO-26AA)
From old datasheet system
|
ONSEMI[ON Semiconductor]
|
| ST95P08 ST95P08B1TR ST95P08B3TR ST95P08B6TR ST95P0 |
MOSFET, P, SOT-23; Transistor type:MOSFET; Current, Id cont:3A; Resistance, Rds on:0.05R; Voltage, Vgs Rds on measurement:4.5V; Case style:SOT-23 (TO-236); Current, Id max:3.0A; Current, Idm pulse:12A; Marking, SMD:M5; Pins, No. RoHS Compliant: Yes
8 Kbit Serial SPI EEPROM with Positive Clock Strobe
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
|
| MMBV2104L MMBV2104LT1 MMBV2104LT3 |
UHF BAND, 12 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE CASE 318-07, 3 PIN
|
Motorola Mobility Holdings, Inc.
|
| ST95040 ST95040B1TR ST95040B3TR ST95040B6TR ST9504 |
4K serial SPI EEPROM with positive clock strobe
4/2/1 KBITS SERIAL SPI EEPROM WITH POSITIVE CLOCK STROBE
(ST950x0) 4K/2K/1K Serial SPI EEPROM with Positive Clock Strobe
MOSFET, N SOT-23MOSFET, N SOT-23; Transistor type:MOSFET; Transistor polarity:N; Voltage, Vds max:30V; Case style:SOT-23; Current, Id cont:2.6A; Current, Idm pulse:10A; Power, Pd:0.75W; Resistance, Rds on:0.07R; SMD:1; Current, Id
4K/2K/1K Serial SPI EEPROM with Positive Clock Strobe 4K/2K/1K串行SPI EEPROM，带有正时钟选
SPI Serial EEPROM SPI串行EEPROM
2K serial SPI EEPROM with positive clock strobe
|
ST Microelectronics
SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
|
| SRU6025-100Y SRU6025-150Y SRU6025-151Y SRU6025-220 |
CHOKE, POWER, SHIELDED, 10UH; Inductor type:Shielded Power Choke; Inductance:10uH; Tolerance, inductance:30%; Resistance:57mR; Frequency, resonant:25MHz; Case style:SMD Shielded; Q factor:8; Material, core:Ferrite DR/RI; RoHS Compliant: Yes
CHOKE, POWER, SHIELDED, 15UH; Inductor type:Shielded Power Choke; Inductance:15uH; Tolerance, inductance:30%; Resistance:86mR; Frequency, resonant:22MHz; Case style:SMD Shielded; Q factor:12; Material, core:Ferrite DR/RI; RoHS Compliant: Yes
CHOKE, POWER, SHIELDED, 150UH; Inductor type:Shielded Power Choke; Inductance:150uH; Tolerance, inductance:30%; Resistance:770mR; Frequency, resonant:5MHz; Case style:SMD Shielded; Q factor:30; Material, core:Ferrite DR/RI; RoHS Compliant: Yes
CHOKE, POWER, SHIELDED, 22UH; Inductor type:Shielded Power Choke; Inductance:22uH; Tolerance, inductance: /-30%; Resistance:130mR; Frequency, resonant:18MHz; Case style:SMD Shielded; Q factor:12; Material, core:Ferrite DR/RI; RoHS Compliant: Yes
CHOKE, POWER, SHIELDED, 220UH; Inductor type:Shielded Power Choke; Inductance:220uH; Tolerance, inductance:30%; Resistance:1250mR; Frequency, resonant:4MHz; Case style:SMD Shielded; Q factor:20; Material, core:Ferrite DR/RI; RoHS Compliant: Yes
CHOKE, POWER, SHIELDED, 33UH; Inductor type:Shielded Power Choke; Inductance:33uH; Tolerance, inductance:30%; Resistance:180mR; Frequency, resonant:12MHz; Case style:SMD Shielded; Q factor:12; Material, core:Ferrite DR/RI; RoHS Compliant: Yes
CHOKE, POWER, SHIELDED, 4.7UH; Inductor type:Shielded Power Choke; Inductance:4.7uH; Tolerance, inductance: /-30%; Resistance:35mR; Frequency, resonant:42MHz; Case style:SMD Shielded; Q factor:8; Material, core:Ferrite DR/RI; RoHS Compliant: Yes
CHOKE, POWER, SHIELDED, 68UH; Inductor type:Shielded Power Choke; Inductance:68uH; Tolerance, inductance: /-30%; Resistance:365mR; Frequency, resonant:8MHz; Case style:SMD Shielded; Q factor:10; Material, core:Ferrite DR/RI; RoHS Compliant: Yes
|
BOURNS INC
|
| 2N4036 2N4037 |
CASE 79.04, STYLE 1 TO-39 (TO-205AD)
|
MOTOROLA INC
MOTOROLA[Motorola, Inc]
|
| P80C557E4EFB-T P80C557E4EBB-T |
8-BIT, FLASH, 16 MHz, MICROCONTROLLER, PQFP80 14 X 20 MM, 2.70 MM HEIGHT, PLASTIC, SOT-318-1, QFP-80
Single-chip 8-bit microcontroller(单片8位微控制 单芯位微控制器（单片8位微控制器）
|
NXP Semiconductors N.V.
|
|
