PART |
Description |
Maker |
K9F2808U0C-VIB0 K9F2808Q0C-DCB0 K9F2808U0C-DCB0 K9 |
16M x 8 Bit / 8M x 16 Bit NAND Flash Memory 16M x 8 Bit , 8M x 16 Bit NAND Flash Memory 1,600 × 8位,8米16位NAND闪存 16M X 8 FLASH 2.7V PROM, 30 ns, PBGA63
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SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
KM29U128IT KM29U128T |
16M x 8 Bit NAND Flash Memory
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
K9F2808Q0C K9F2808Q0C-DCB0 K9F2808U0C-DCB0 K9F2808 |
16M x 8 Bit / 8M x 16 Bit NAND Flash Memory 16M x 8 Bit , 8M x 16 Bit NAND Flash Memory 16M x 8 bit NAND flash memory, 2.7 - 3.6V
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
K9F5608Q0B-DCB0 K9F5608Q0B-DIB0 K9F5608Q0B-HCB0 K9 |
32M x 8 Bit / 16M x 16 Bit NAND Flash Memory 32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
LH28F160BJHE-TTL90 LHF16J04 |
16M-BIT ( 1Mbit x16 / 2Mbit x8 )Boot Block Flash MEMORY(16M 1Mx16 / 2Mx8 )Boot Block 闪速存储器) Flash Memory 16M (1M × 16/2M × 8)
|
Sharp Corporation Sharp Electrionic Components
|
DSK9K1208U0A K9K1208U0A-YCB0 K9K1208U0A-YIB0 DS_K9 |
64M x 8 Bit / 32M x 16 Bit NAND Flash Memory TV 16C 16#16 SKT RECP 6400 × 8位NAND闪存 64M x 8 Bit NAND Flash Memory Data Sheet
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
LH28F016SCHB LH28F016SCHB-L95 LHF16C13 LH28F016SCR |
LH28F016SCHSR-L120 16M (2M x 8)Smart Voltage Flash Memory 40 pin STSOP LH28F016SCHSR-L150 16M (2M x 8)Smart Voltage Flash Memory 40 pin STSOP LH28F016SCN-L100 16M (2M x 8)Smart Voltage Flash Memory 16Mbit Flash Memory LH28F016SCR-L100 16M (2M x 8)Smart Voltage Flash Memory LH28F016SCR-L120 16M (2M x 8)Smart Voltage Flash Memory LH28F016SCR-L95 16M (2M x 8)Smart Voltage Flash Memory LH28F016SCHSR-L100 16M (2M x 8)Smart Voltage Flash Memory 40 pin STSOP
|
SHARP[Sharp Electrionic Components]
|
K9F1608W0A- K9F1608W0A-TCB0 K9F1608W0A-TIB0 K9F1G0 |
-2M x 8 Bit NAND Flash Memory 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
AT49LV1614AT AT49BV1614AT-90TI AT49BV1614A-90TI AT |
AT49BV1604A(T)/AT49BV/LV1614A(T) [Updated 3/02. 26 Pages] 16M bit . 2.7-Volt(BV)/ 3.0 - Volt (LV). Sectored Flash. Dual Plane. Top or Bottom Boot 16-megabit 1M x 16/2M x 8 3-volt Only Flash Memory 1M X 16 FLASH 3V PROM, 70 ns, PDSO48 16-megabit 1M x 16/2M x 8 3-volt Only Flash Memory 16兆位100万x 16/2M × 8 3伏,只有闪存
|
Atmel Corp. Atmel, Corp.
|
MBM29LV017-12 MBM29LV017-90 MBM29LV017-90PBT MBM29 |
FLASH MEMORY 16M (2M x 8) BIT CMOS 16M (2M x 8) bit
|
Fujitsu Microelectronics
|
AM29LV256MH40FF L256ML113RI AM29LV256MH30FF AM29LV |
256 Megabit (16 M x 16-Bit/32 M x 8-Bit) MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control 16M X 16 FLASH 3V PROM, 120 ns, PDSO56 256 Megabit (16 M x 16-Bit/32 M x 8-Bit) MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control 16M X 16 FLASH 3V PROM, 110 ns, PDSO56 256 Megabit (16 M x 16-Bit/32 M x 8-Bit) MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control 256兆位6 M中的x 16-Bit/32 M中的x 8位)MirrorBitTM 3.0伏特,只有统一闪存部门与VersatileI /价外控制
|
Advanced Micro Devices, Inc.
|
K9F3208W0A- K9F3208W0A-TCB0 K9F3208W0A-TIB0 K9F400 |
512K x 8 bit NAND Flash Memory 4M x 8 Bit NAND Flash Memory
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
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