| PART |
Description |
Maker |
| M27256 M27256-1F1 M27256-1F6 M27256-20F1 M27256-20 |
NMOS 64K 8K x 8 UV EPROM
NMOS 256K 32K x 8 UV EPROM
|
ST Microelectronics
STMicroelectronics
|
| M2764A-25F6 |
NMOS 64K (8 x 8) UV EPROM, 250ns
|
SGS Thomson Microelectronics
|
| AT27C512R-70PA AT27C512R07 AT27C512R-70JA AT27C512 |
70NS, TSOP, IND TEMP, GREEN PKG(EPROM) 64K X 8 OTPROM, 70 ns, PDSO28
45NS, PLCC, IND TEMP, GREEN(EPROM) 64K X 8 OTPROM, 45 ns, PQCC32
512K (64K x 8) OTP EPROM
|
Atmel, Corp.
聚兴科技股份有限公司
ATMEL Corporation
|
| M27V512-200N1 M27V512 |
NND - 512 KBIT (64KB X8) LOW VOLTAGE UV EPROM AND OTP EPROM
64K X 8 OTPROM, 200 ns, PDSO28
|
ST Microelectronics
STMICROELECTRONICS
|
| W27E520S-70 W27520 W27E520W-90 W27E520 W27E520S-90 |
64K X 8 ELECTRICALLY ERASABLE EPROM 64K X 8 EEPROM 5V, 70 ns, PDSO20
BOX 3.05X1.51X1.05 W/1 BTN ALMOND
FLASH MEMORY
|
Winbond Electronics, Corp.
Winbond Electronics Corp
WINBOND[Winbond]
|
| ET2716 |
16K NMOS UV EPROM
|
ST Microelectronics
|
| HN27256G-25 |
32K x 8 nMOS EPROM Memory
|
Hitachi Semiconductor
|
| UPD2764 UPD2764-2 UPD2764-3 UPD2764-4 |
8,192 x 8-BIT NMOS UV/OTP EPROM
|
NEC
|
| NTE21128 |
Integrated Circuit NMOS, 128K (16K x 8) UV EPROM
|
NTE[NTE Electronics]
|
| NTE2532 |
Integrated Circuit NMOS, 32K EPROM, 300ns
|
NTE[NTE Electronics]
|
| NTE2164 NTE-DRAM NTE4164 NTE2102 NTE2128 NTE2117 N |
NMOS / 64k DRAM
MICROPROCESSOR & MEMORY CIRCUITS
|
NTE Electronics
|
| MD27C64 M27C64 |
64K CHMOS UV EPROM
|
Intel
|
