PART |
Description |
Maker |
MTB16N25E_D ON2396 MTB16N25E MTB16N25E-D MOTOROLAI |
TMOS POWER FET 16 AMPERES 16 A, 250 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET From old datasheet system TMOS POWER FET 16 AMPERES 250 VOLTS TMOS E-FET High Energy Power FET D2PAK for Surface Mount
|
Motorola Mobility Holdings, Inc. MOTOROLA[Motorola, Inc] ON Semiconductor
|
MMDF3200Z |
DUAL TMOS POWER MOSFET 11.5 AMPERES 20 VOLTS
|
MOTOROLA[Motorola, Inc]
|
MTDF1N03HD ON2524 ON2523 |
DUAL TMOS POWER MOSFET 2.0 AMPERES 30 VOLTS RDS(on) = 0.120 OHM From old datasheet system
|
MOTOROLA[Motorola, Inc]
|
MTDF1N02HD ON2522 ON2521 |
DUAL TMOS POWER MOSFET 1.7 AMPERES 20 VOLTS RDS(on) = 0.120 OHM From old datasheet system
|
MOTOROLA[Motorola, Inc]
|
MMDF2P02E ON2168 |
DUAL TMOS MOSFET 2.5 AMPERES 25 VOLTS 2 A, 20 V, 0.4 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET From old datasheet system
|
Motorola Mobility Holdings, Inc. Motorola, Inc
|
MTY14N100E_D ON2710 MTY14N100E MTY14N100 MTY14N100 |
TMOS POWER FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM TMOS14安培,功率场效应晶体000伏特的RDS(on)\u003d 0.80欧姆 TMOS POWER FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM 14 A, 1000 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA From old datasheet system TMOS E-FET Power Field Effect Transistor N-Channel Enhancement Mode Silicon Gate
|
Motorola Mobility Holdings, Inc. MOTOROLA[Motorola, Inc] ON Semiconductor
|
MMSF4N01HD |
TMOS MOSFET 5.8 AMPERES 20 VOLTS
|
Motorola, Inc.
|
MMFT5P03HD ON2230 MMFT5P03HDT3 ON2229 |
TMOS MEDIUM POWER FET 5.2 AMPERES 30 VOLTS From old datasheet system TMOS P-CHANNEL FIELD FEECT TRANSISTOR
|
MOTOROLA[Motorola, Inc]
|
MMSF7N03HD MMSF7N03HD_D ON2274 |
From old datasheet system SINGLE TMOS POWER MOSFET 8.0 AMPERES 30 VOLTS
|
ON Semi Motorola, Inc
|
MMSF5N02HD ON2268 |
SINGLE TMOS POWER MOSFET 5.0 AMPERES 20 VOLTS From old datasheet system
|
Motorola, Inc.
|
IRF540_D ON0285 IRF540/D IRF540-D IRF540 |
27 A, 100 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 100V7A TMOS Power Field Effect Transistor (N-Channel Enhancement Mode Silicon Gate100V7A TMOS功率场效应管(N沟道增强型硅门)) From old datasheet system TMOS POWER FET 27 AMPERES TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
|
Motorola, Inc. ON Semiconductor
|
MTW8N60E |
N?Channel Power MOSFET TMOS POWER FET 8.0 AMPERES 600 VOLTS RDS(on) = 0.55 OHM
|
ON Semiconductor
|